1557 B TRANSISTOR Search Results

Contextual Info: EN2016D 312=1557 OOQllGa M SÔE D ELANTEC INC EN20J6D Die Fast QuadNPN Array A b s o lu te M a xim u m R a tin g s w T~</3 -as t a = 25°c> Pd Power Dissipation Each Transistor 500 mW (T^ = 25°C Ta Operating Temperature Range —55°Cto+125°C Ts Storage Temperature

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

basic circuit diagram of AC servo motor

Abstract: 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram
Contextual Info: ELANTEC 4 IE D INC 315=1557 Servo Motor Drivers G0017B3 b ÜELA " T S ¿ -i V 2 S F e a tu r e s G e n e ra l D e sc r ip tio n • No crossover distortion • Low output offset current • Maximum output swing • Short circuit protected • Programmable park voltage

r58 ah16

Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208
Contextual Info: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly

transistor d 1557

Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
Contextual Info: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly

2N6547

Abstract: 2N6546
Contextual Info: s G S-THOHSON - D7E D | 7 ^ 5 3 7 . : 6 -7 C- 1 5 5- 7 1 D OQlTBia"!] 1" - / S ’- T^- 2N6546 IVIULTIEPITAXIAL MESA NPN H IG H V O L T A G E , H IG H C U R R E N T P O W E R SW IT C H The 2N6546 and 2N6547 are multiepitaxial mesa NPN transistors in Jedec TO-3

transistor d 1557

Contextual Info: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth

t559

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor d 1557

Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
Contextual Info: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.

M74 marking

Abstract: BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg
Contextual Info: 71 lOfl2b 001^570 bS3 • P H I N B SS8 3 7 V . MOSFET N-CHANNEL ENHANCEMENT S W I T C H IN G TRA N S IS TO R S ym m etrical insulated-gate silicon MOS fie ld -e ffe c t transistor o f the N-channel enhancem ent m ode type. The tran sisto r is sealed in a S O T 143 envelope and features a lo w ON resistance and lo w capacitances.

Contextual Info: ELANTEC 3129557 ELANTEC INC Tfl » E j 312TSS7 DDDD5S2 INC fl 98° 00 55 2 D ~}' 7 ^ - / 5 ^ EL2 O04:/EL,20O4C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS 350M H z FET Buffer M C O O w oo c F i- Features General Description • • • • • • • The EL2004 is a very high-speed, FET input buffer/line driver de­

transistor D 1557

Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC

EL2223CM

Abstract: EL2223 EL2223C EL2223CN HA2540 MIL-I-45208A
Contextual Info: EL2223C Features • W ide gain bandw id th— 500 M H z • H igh slew rate— 350 V/jms • H igh pow er bandw idth ± 10 Vout 5.5 M H z • Large open loop gain 83 dB • Low pow er— 5 m A /am plifier • Low in p u t offset— 0.5 m V typ. • W ide supply voltage range

SRF 3775

Abstract: EL2041CG pot 100K smd smd diode JC 7K EL2041CJ EL2041G EL2041J HA2541 zener 4b7
Contextual Info: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

zener 4b7

Contextual Info: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,

Contextual Info: la n te EL2019C c HIOH PERFORMANCE ANAIÜGINTEGRATED CIRCUITS Fast, High Voltage Comparator with Master Stave Flip-Flop F e a tu r e s G e n e ra l D e sc r ip tio n • Comparator cannot oscillate • F ast response—5 ns data to clock setup, 20 ns clock to output

transistor d 1557

Abstract: bu32 transistor IC 1557 b
Contextual Info: 83 68 6 0 2 SO L ITRO N D E V I C E S INC DE | B 3 L flfc.D 5 D Q 0 1 4 1 D bl M | T-33 -33-29 O lit m n Devices, Inc. NO.: BU3 2 3 -rvoe. NPN SILICON POWER ' T rB * D a r l i n g t o n T r a n s i s t o r MAXIMUM. RATINGS CASE: TO—3 400 V V o l t a g e , C o l l e c t o r t o E m i t t e r V c e r s u s Rbe * 100Q

IRF p 536 MOSFET

Abstract: IRF 534 100-C IRFJ220 IRFJ221 IRFJ222 IRFJ223 FJ222 LG t
Contextual Info: HE D I 4ÛSS45Z GaOTSSt, 0 | Data Sheet No. PD-9.403A T-39-11 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER I « R IRFJSSO HEXFET TRANSISTORS IRFJ221 N-CHANNEL POWER MOSFETs IRFJ222 IRFJ223 200 Volt, 0.8 Ohm HEXFET T h e HEXFET® technology is the key to International

2242

Abstract: EL2242 EL2242C EL2242CM EL2242CN MIL-I-45208A QCX0002 "Op Amp" lm 324
Contextual Info: élantec EL2242C MGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features • Inputs and outputs operate at negative supply rail • U nity gain bandwidth—30 M Hz • High slew rate—40 V // as • Settles to 0.01% of a 10V swing in 500 ns • Operates with supplies as low as

KTC transformer

Abstract: 50V ELNA Electrolytic capacitor elna 50v M113 SD2918 TSD2918 mallory tt TRANSISTOR 8073 mallory tbs 2643801OOZ
Contextual Info: SD2918 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . P o u t = 30 W MIN. WITH 18 dB GAIN @ 30 MHz DESCRIPTION The SD2918 is a gold metallized N-Channel MOS