1533 IE 5 Search Results

Contextual Info: 6 7 DO NOT SCALE 5 A 2 3 DATE SYM REVISION RECORD AUTH 10SE97 A RELEASED SYSTEMS H G F F o 1 E E •\ 3 OHIO 44406 F WARREN, ELECTRIC 970005 JIL WTP G 22 PACKARD CK A P P L Y A D H E S IV E L O C T I T E 4 5 4 TO C L I P SLOT AND THEN ASSEMBLE C L I P - C P A . L E T SET

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

Contextual Info: DELPHI WARREN, PACKARD 44486 ELECTRIC OHIO SYSTEMS DO NOT SCALE D GED 2X 6 . 6 6 TYP — 25.4 ±0.15 6500 1533 NO PART SYMBOL D E F I N I T I O N THE NUMBER IN S ID E THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR T H IS DRAWING/PART NUMBER

Contextual Info: ORDERING INFORMATION Device MC1433F MC1433G MC1433L MC1433P MC1533F MC1533G MC1533L Temperature Range Package 0°C to +70°C 0°C to +70°C 0°C to +70°C 0°C to +70°C -5 5 °C to +125°C —55°C to +125°C -5 5 °C to +125°C Ceramic Flat Metal Can Ceramic DIP

M53106

Abstract: M53106A 10SL3 5UPI MOST spec c00a
Contextual Info: |i i l - LEADS COVEREO WITH APPROX. 50mm HEAT SHRINK SLEEVING. -20 . G *i.o — *.13 A - ELCTRICAL TRAVEL 12.00 [I] PERMANENT END BEARINGS ♦.00 017.80-. 13 — 016.40 — [CAUTIO N I WHITE SURFACE THIS SIDE. — Ih e a d e r d â t ü m ] WIPER ASSY

Contextual Info: 2 3 5 4 6 57 A 7 Push-Pull Plastic-Housing CO vD RJI Cable 8AWG, CAT6 Mating face RJ45 according to IEC 60603-7 Loading-Plan Shield \ 4 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG 8AWG White areen j

SOT-23 MARKING T36

Abstract: BSR19 BSR19A BSR20 BSR20A
Contextual Info: • 1^53^31 0025560 53b ■ APX N AMER PHILIPS/DISCRE TE BSR20 BSR20A t.7E D SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.

Contextual Info: 1 6 15 14 13 12 1 1 10 9 6 7 ï 5 4 SYMBOL D E F I N I T I O N THE NUMBER IN S ID E THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR T H IS DRAWING/PART NUMBER M M IS S IN G TOTAL NO. OF SYMBOLS ON DRAW ING 25 LAST NO. USED 43 2 3 NUMBERS

Contextual Info: DO NOT SCALE SYMBOL D E F I N I T I O N THE NUMBER INS IDE THE SYMBOL CD CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR TH IS DRAWING/PART NUMBER M IS S IN G DATE NUMBERS SYM REVISION RECORD AUTH 03 F E 98 A RELEASED TOTAL NO. OF SYMBOLS ON DRAWING

KL35

Contextual Info: 50 100 150 200 250 300 350 400 Load Voltage V Figure 8. Turn-off Time vs. Temperature Ambient Temperature (°C) Figure 9. Turn-on Time vs. LED Current I / 1 5 10 15 T=85°C T=25°c •=-45°C / X 1 / 20 25 30 H 35 40 45 50 LED Forward Current (mA) L H 1532FP/FPTR

SHINDENGEN DIODE

Contextual Info: ¡ S H U i ^ y P - H 7, x / W Surface Mounting Device K •yom U tlpe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS DF10LC20U Case : STO-220 200V 10A •S M D • trr3 5 n s I I I • S R S:S • D C /D C m y 'j-K 'O b •» « . i y OA. ? m •mm. an.

F1E90

Abstract: 2SK1533 00145220
Contextual Info: H V X v y —X /\° 7 -M 0 S F E T ' y 3 - > 7 H VX Series Pow er M O SFET I*W M > £ I2 ] 2SK1533 OUTLINE DIMENSIONS [F1E90] 900V 1A •A *S « Ciss $i c - t in ; mT.'f y • A C • X - f aö'SUo 2 4 V 5 1V i ^ S i ? V Î^  B Œ S j • - Î y ; t - i?

PBT GF20

Abstract: PA6 GF 15336005
Contextual Info: 32 31 30 29 28 27 26 25 24 23 20 21 22 19 18 17 16 15 14 13 12 11 8 10 7 4 M IS S IN G SYMBOL D E F I N I T I O N A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE IN D IV ID U A L COMPONENT DRAWING.

Contextual Info: 2 3 4 5 6 7 54,3 Plastic A 1 ^ * y ^ 5 J i Z ' R J I C a b l e 8AWG Lodding-Pldn Shield Ay Whife(areen j Green Wh i t e ( o r a n g e ) Blue Wh i t e ( b l u e ) Oranae Whi t e ( b r o w n ) B r o wn f- - T r a n s m i s s i o n p r o p e r t i e s in a c c o r d a n c e

mc1433g

Abstract: MC1433 MC1433P MC1533F MC1533G MC1433L MC1533 MC1433F MCI533 MC1533L
Contextual Info: ORDERING INFORMATION Device MC1433F MC1433G MC1433L MC1433P MC1533F MC1533G MC1533L Temperature Range Package 0°C to +70°C 0°C to +70°C 0°C to +70°C 0°C to +70°C —55°C to +125°C —55°C to +125°C —55°C to +125°C Ceramic Flat Metal Can Ceramic DIP

smd diode K7

Abstract: TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f
Contextual Info: W M S M D <M*%m Diagram of the Surface Mounting Devices pa £3 Type No. A’ 7 ~ h 7 > y ^ Application 2SA 1795 • D C - D C z i> M — £ 2SA 1796 • *a v/i- Power Transistor 2SC 4668 2SC 4669 • dn^&^s KP y • i —2 K7 -Y • ; \ > v - K-7< 7 • DC-DC Converter

Contextual Info: 10 a s LOUSS^ 1 H o'— R \C IR C U IT 1. NO. I MARK IVY- u i • R - S yN L T ER M IN A L p p _ 5 z fc no tes m a t e r ia l 'A5 F IRA . XWx4T&. ( A ) . UL94V-0 HOUSING : POLYAMIDE , G L A S S FILL ED , NATURAL, UL94V-0 7 ^ i I - # i * ln I :ky»»-77'( KIPPS), # 5 *# *. +Ai vx .U L9 4 V -0

Contextual Info: 10 a s LOUSS^ 1 H o'— R 1. \CIRCUIT NO. I MARK IVY- u i p • R -S yN L TERMINAL p ~ m no tes m a t e r ia l 'A 5 F IR A . XWx4T&. ( A ) . UL94V-0 HOUSING : POLYAMIDE , GLASS FILLED , N ATURAL, UL94V-0 7 ^ i I - # i * ln I :ky»»-77'( KIPPS), # 5*# *. + A i v x .U L 9 4 V - 0

Contextual Info: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage

Contextual Info: International IQ R Rectifier PD-9.1440 IRGCH20SE TARGET IRGCH20SE IGBT Die in Wafer Form 1200 V Size 2 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE (on) Collector-to-Em itter Saturation Voltage

Contextual Info: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage

Contextual Info: SCORED TURRET TERMINAL DOARDS & STANDARD TURRET TERMINAL BOARDS Cut your production cost by eliminating the tooling and setup charge usually applied to nonstandardized boards. Terminals are securely riveted and hot tinned for easy soldering. Terminals: Brass, ASTM-B16

TS15

Abstract: TS1583 TS1583CM5
Contextual Info: $ TS1583 T A IW A N S E M IC O N D U C T O R 1,5A Dual Input Low Dropout Voltage Regulator pb RoHS CO M PLIANCE TO-263-5L (D 2PAK) Pin Definition; 1. S en se 2. A d j/G n d 3. O utpu t 4. V C ontrol ¿ il 5. V Power IM M 1 5 General Description The T S 1583 fa m ily is a positive adjustable and fixed voltage regulator developed to provide 1.5A w ith H igher

transistor KSA

Abstract: AF109R
Contextual Info: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .