150V POWER DIODE Search Results

ta9192

Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Contextual Info: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,

AN7254

Abstract: AN7260 RFP2N12 RFP2N15 TB334
Contextual Info: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,

IRF5NJ6215

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

AN7254

Abstract: AN7260 RFL1N12L RFL1N15L
Contextual Info: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,

FZT855Ta

Abstract: fzt855
Contextual Info: A Product Line of Diodes Incorporated Green FZT855 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 150V   IC = 5A high Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF5NJ6215

Abstract: 75vds p mosfet
Contextual Info: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: A Product Line of Diodes Incorporated FMMT625 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 150V Maximum Continuous Collector Current IC = 1A 625mW Power dissipation

IRF232

Abstract: IRF230 IRF231 IRF233 TB334
Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

RFL1N15

Abstract: AN7254 AN7260 RFL1N12 TB334
Contextual Info: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

irf9230

Abstract: IRF9231 IRF9232 IRF9233 TB334
Contextual Info: IRF9230, IRF9231, IRF9232, IRF9233 Semiconductor -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF220

Abstract: IRF223 irf2210 IRF221 IRF222 TB334 MOSFET IRF220
Contextual Info: IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: W vys s' RFP2N12, RFP2N15 Semiconductor 7 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 2A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

fzt 655

Abstract: FZT655 FZT755 DS33151 FZT655TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT655 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V IC = 1A high Continuous Current Low Saturation Voltage Complementary PNP Type – FZT755

transistor marking code 12W

Abstract: transistor marking code 12W 12 DIODES incorporated
Contextual Info: A Product Line of Diodes Incorporated ZTX855 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Features • • • • • • • • Mechanical Data • • • • • BVCEO > 150V Maximum Continuous Current IC cont = 4A Up to 10A Peak Current Low Saturation Voltage

Contextual Info: A Product Line of Diodes Incorporated FMMT625 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO = 150V IC = 1A 625mW Power dissipation Low Equivalent On Resistance Low Saturation Voltage

Contextual Info: PD - 94268 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y3315CM 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y3315CM 150V RDS(on) 0.085Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94286A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF5NJ3315

Contextual Info: PD - 94287 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF5NJ3315

Contextual Info: PD-94287B HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

ta9192

Contextual Info: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such