150N0 Search Results

IXTQ150N06P

Abstract: 150N06P 150N06
Contextual Info: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C 60 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient ±20

150N06P

Contextual Info: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM

150N06P

Abstract: 150N06 DS99254E
Contextual Info: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient

150N06

Abstract: DS99254
Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A Ω = 10 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 60 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ

50 amp H-bridge Mosfet

Abstract: OMS60L60FL OMS120N10FL OMS150N06FL OMS50F60FL 150 amp H-bridge Mosfet
Contextual Info: Preliminary Data Sheet 150N06FL OMS120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMS60L60FL OMS50F60FL 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design

150N03

Abstract: 150N03LD PG-TDSON-8 JESD22 BSC150N03LD
Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications

Contextual Info: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3

150N06

Contextual Info: Prelim inary Data Sheet 150N06FL OMD6OL6OFL OMD120N10FL QMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 6 0 0 Volt, 50 To 150 A m p M o d u l e s With Int ern al G a t e Drive. H - B r i d g e C o n f i g u r a t i o n FEATURES

150N03

Abstract: 150N03LD BSC150N03LD IEC61249-2-21 JESD22
Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V DS 30 V • Dual N-channel, logic level R DS on ,max 15 mΩ • Fast switching MOSFETs for SMPS ID 20 A PG-TDSON-8 • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications

150N03

Abstract: 150N03MD BSO150N03MD IEC61249-2-21 150n03m
Contextual Info: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3 A

150N03

Abstract: 150N03MD
Contextual Info: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3 A

45L40

Abstract: D0205AA 1N3092 150L20A sd150n06p 1N3087
Contextual Info: International göüRectifier Diodes Standard Recovery 150-200 Amps IF S M 1 lF(AV) @ TC Part Num ber Vr r m (V) 1N3111 1N3085 1N3086 1N3087 1N3088 1N3089 1N3090 1N3091 1N3092 1N5162 50 100 200 300 400 500 600 800 1000 1200 150L5A 150L10A 150L20A 150L40A

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 75V / 150A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 150N075T 75V, RDS(ON)=4.5mW@VGS=10V, ID=30A

150N03

Abstract: 150N03LD
Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications

50 amp H-bridge Mosfet

Abstract: IGBT/MOSFET Gate Drive OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL 150 amp H-bridge Mosfet
Contextual Info: Preliminary Data Sheet 150N06FL OMD120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMD60L60FL OMD50F60FL 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive

50 amp H-bridge Mosfet

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V fast recovery diode 600v 120a OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL Linear SOI switch 50F60
Contextual Info: Preliminary Data Sheet 150N06FL OMD120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMD6OL6OFL OMD50F60FL 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive

Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications

150N06

Abstract: oms 450
Contextual Info: Prelim inary Data Sheet 150N06FL OMS6OL6OFL OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 A m p Modules. H -B ri dg e Con fig urat io n FEATURES • • • • • Isolated Heat Sink Low Inductance Design

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

50 amp H-bridge Mosfet

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V TSFL OMS120N10FL OMS150N06FL OMS50F60FL
Contextual Info: 150N06FL Preliminary Data Sheet OMS120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMS6OL6OFL QMS50F60FL 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

Gate Drive H-Bridge

Contextual Info: Preliminary Data Sheet 150N06FL OMD6OL6OFL OMD120N10FL OMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

150N03LD

Abstract: 150N03 BSC150N03LD BSC150N03LD G
Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications