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Nisshinbo Micro Devices R3150N006B-TR-FE 36V INPUT VOLTAGE DETECTOR WITH DETECT AND RELEASE DELAY FUNCTION OR SENSE PIN - Tape and Reel (Alt: R3150N006B-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R3150N006B-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.53	Buy Now
Infineon Technologies AG BSO150N03MDGXUMA1 Transistor MOSFET Array Dual N-CH 30V 9.3A 8-Pin DSO T/R - Tape and Reel (Alt: BSO150N03MDGXUMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BSO150N03MDGXUMA1	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark ()	BSO150N03MDGXUMA1	Tape & Reel	512		100	1 - 10 - 100 $0.74 1000 $0.57 10000 $0.54	Buy Now
	BSO150N03MDGXUMA1	Cut Tape	512		1	1 $1.56 10 $1.56 100 $0.74 1000 $0.57 10000 $0.54	Buy Now
Rochester Electronics	BSO150N03MDGXUMA1		167,728		1	1 - 10 - 100 $0.44 1000 $0.37 10000 $0.33	Buy Now
TME	BSO150N03MDGXUMA1				1	1 $1.31 10 $0.85 100 $0.60 1000 $0.57 10000 $0.57	Get Quote
EBV Elektronik	BSO150N03MDGXUMA1			14 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Win Source Electronics	BSO150N03MDGXUMA1		34,290			1 - 10 - 100 $0.98 1000 $0.65 10000 $0.65	Buy Now
WeEn Semiconductor Co Ltd WMHG150N07B2P-BT WMHG150N07B2P-B/WeEnPACK-B2,WeEnPACK-B2/STANDARD MARKINGTRAY PACK,EPE OR BLISTER/12NC: 934074413300 - Trays (Alt: WMHG150N07B2P-BT)*
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	WMHG150N07B2P-BT	Tray		28 Weeks	70	1 - 10 - 100 $79.28 1000 $78.08 10000 $77.68	Buy Now
Nisshinbo Micro Devices R3150N021A-TR-FE 36V INPUT VOLTAGE DETECTOR WITH DETECT AND RELEASE DELAY FUNCTION OR SENSE PIN - Tape and Reel (Alt: R3150N021A-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R3150N021A-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.53	Buy Now
WeEn Semiconductor Co Ltd WMHG150N07B2P-AT WMHG150N07B2P-A/WeEnPACK-B2,WeEnPACK-B2/STANDARD MARKINGTRAY PACK,EPE OR BLISTER/12NC: 934074412300 - Trays (Alt: WMHG150N07B2P-AT)*
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	WMHG150N07B2P-AT	Tray		28 Weeks	70	1 - 10 - 100 $50.31 1000 $49.55 10000 $49.30	Buy Now

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150N0 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTQ150N06P Abstract: 150N06P 150N06 Contextual Info: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C 60 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient ±20	Original	150n06p ixtq150n06p 150n06	PDF
150N06P Contextual Info: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM	Original	150n06p	PDF
150N06P Abstract: 150N06 DS99254E Contextual Info: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient	Original	150n06p 150n06 ds99254e	PDF
150N06 Abstract: DS99254 Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A Ω = 10 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 60 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	150n06p 065b1 728b1 123b1 +2150n06 ds99254	PDF
50 amp H-bridge Mosfet Abstract: OMS60L60FL OMS120N10FL OMS150N06FL OMS50F60FL 150 amp H-bridge Mosfet Contextual Info: Preliminary Data Sheet 150N06FL OMS120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMS60L60FL OMS50F60FL 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design	Original	oms150n06fl oms120n10fl oms60l60fl oms50f60fl +250 amp h-bridge mosfet 150 amp h-bridge mosfet	PDF
150N03 Abstract: 150N03LD PG-TDSON-8 JESD22 BSC150N03LD Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications	Original	bsc150n03ld 150n03ld 150n03 pg-tdson-8 +1jesd22	PDF
Contextual Info: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3	Original	bso150n03md iec61249-2-21 150n03md	PDF
150N06 Contextual Info: Prelim inary Data Sheet 150N06FL OMD6OL6OFL OMD120N10FL QMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 6 0 0 Volt, 50 To 150 A m p M o d u l e s With Int ern al G a t e Drive. H - B r i d g e C o n f i g u r a t i o n FEATURES	OCR Scan	omd150n06fl omd120n10fl qmd50f60fl 120n10fl +360l60fl 50f60fl 150n06	PDF
150N03 Abstract: 150N03LD BSC150N03LD IEC61249-2-21 JESD22 Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V DS 30 V • Dual N-channel, logic level R DS on ,max 15 mΩ • Fast switching MOSFETs for SMPS ID 20 A PG-TDSON-8 • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications	Original	bsc150n03ld iec61249-2-21 150n03ld 150n03 +1jesd22	PDF
150N03 Abstract: 150N03MD BSO150N03MD IEC61249-2-21 150n03m Contextual Info: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3 A	Original	bso150n03md iec61249-2-21 150n03md 150n03 +1150n03m	PDF
150N03 Abstract: 150N03MD Contextual Info: 150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Dual N-channel R DS on ,max • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 15 mΩ V GS=4.5 V 18.2 ID 9.3 A	Original	bso150n03md 150n03md 150n03	PDF
45L40 Abstract: D0205AA 1N3092 150L20A sd150n06p 1N3087 Contextual Info: International göüRectifier Diodes Standard Recovery 150-200 Amps IF S M 1 lF(AV) @ TC Part Num ber Vr r m (V) 1N3111 1N3085 1N3086 1N3087 1N3088 1N3089 1N3090 1N3091 1N3092 1N5162 50 100 200 300 400 500 600 800 1000 1200 150L5A 150L10A 150L20A 150L40A	OCR Scan	1n3111 1n3085 1n3086 1n3087 +101n3088 1n3089 1n3090 1n3091 1n3092 1n5162 45l40 d0205aa 150l20a sd150n06p	PDF
Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 75V / 150A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 150N075T 75V, RDS(ON)=4.5mW@VGS=10V, ID=30A	Original	hy150n075t o-220ab 2002/95/ec 250ma +3125oc -55oc 13-may-2012	PDF
150N03 Abstract: 150N03LD Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications	Original	bsc150n03ld 150n03ld 150n03	PDF

50 amp H-bridge Mosfet Abstract: IGBT/MOSFET Gate Drive OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL 150 amp H-bridge Mosfet Contextual Info: Preliminary Data Sheet 150N06FL OMD120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMD60L60FL OMD50F60FL 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive	Original	omd150n06fl omd120n10fl omd60l60fl omd50f60fl +350 amp h-bridge mosfet igbt/mosfet gate drive 150 amp h-bridge mosfet	PDF
50 amp H-bridge Mosfet Abstract: Fast Recovery Bridge Rectifier, 60A, 600V fast recovery diode 600v 120a OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL Linear SOI switch 50F60 Contextual Info: Preliminary Data Sheet 150N06FL OMD120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMD6OL6OFL OMD50F60FL 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive	OCR Scan	omd150n06fl omd120n10fl omd50f60fl flcid73 +70q1d11 50 amp h-bridge mosfet fast recovery bridge rectifier, 60a, 600v fast recovery diode 600v 120a omd60l60fl linear soi switch 50f60	PDF
Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications	Original	bsc150n03ld 150n03ld	PDF
150N06 Abstract: oms 450 Contextual Info: Prelim inary Data Sheet 150N06FL OMS6OL6OFL OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 A m p Modules. H -B ri dg e Con fig urat io n FEATURES • • • • • Isolated Heat Sink Low Inductance Design	OCR Scan	oms150n06fl oms120n10fl oms50f60fl 150n06fl +5120n10fl 60l60fl 50f60fl 150n06 oms 450	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
50 amp H-bridge Mosfet Abstract: Fast Recovery Bridge Rectifier, 60A, 600V TSFL OMS120N10FL OMS150N06FL OMS50F60FL Contextual Info: 150N06FL Preliminary Data Sheet OMS120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMS6OL6OFL QMS50F60FL 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design	OCR Scan	oms150n06fl oms120n10fl oms50f60fl oms150n0ts +4b7at073 50 amp h-bridge mosfet fast recovery bridge rectifier, 60a, 600v tsfl	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
Gate Drive H-Bridge Contextual Info: Preliminary Data Sheet 150N06FL OMD6OL6OFL OMD120N10FL OMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive	OCR Scan	omd150n06fl omd120n10fl omd50f60fl 60l60fl +350f60fl b7ind73 gate drive h-bridge	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
150N03LD Abstract: 150N03 BSC150N03LD BSC150N03LD G Contextual Info: 150N03LD G OptiMOS 3 Power-Transistors Product Summary Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS V DS 30 V R DS on ,max 15 mΩ ID 20 A • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications	Original	bsc150n03ld 150n03ld 150n03 bsc150n03ld g	PDF

150N0 Search Results

150N0 Price and Stock

Nisshinbo Micro Devices R3150N006B-TR-FE

Infineon Technologies AG BSO150N03MDGXUMA1

WeEn Semiconductor Co Ltd WMHG150N07B2P-BT

Nisshinbo Micro Devices R3150N021A-TR-FE

WeEn Semiconductor Co Ltd WMHG150N07B2P-AT

150N0 Datasheets Context Search

IXTQ150N06P

150N06P

150N06P

150N06

50 amp H-bridge Mosfet

150N03

150N06

150N03

150N03

150N03

45L40

150N03

50 amp H-bridge Mosfet

50 amp H-bridge Mosfet

150N06

7N60B equivalent

50 amp H-bridge Mosfet

PEF 24628

Gate Drive H-Bridge

BCM 4336

150N03LD