150MW Search Results

CDLH-L1G12

Contextual Info: 交流电流传感器 产品信息 产品信息 型号：CDLH-L1G12 型号： 规格：输入:200A;300A;400A;500A;600A;700A;800A;900A;1000A 规格： 输出:4V;5V 精度:1.0 响应时间:15 s 负载能力:5mA 静态功耗:150mW 工作电源:±12/15VDC

Contextual Info: 10110B.F LOGIC DIAGRAM CIRCUIT SCHEMATIC B,F PA CK AG E VCC2 16 ',8— p>—8; VCC1 = 1' 1S- VCC 2 “ 16' V EE “ 8 Positive logic: high level - ‘ V FEA TU RES •Fa*! propagation delay = 2.4 na TYP all outputa loaded •Power diaaipation * 150mW/package TYP (no load)

Contextual Info: BZX584Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.15 Watts FEATURES SOD-523 • Planar die construction • 150mW power dissipation rating • Ultra-small surface mount package SOD-523 MECHANICAL DATA • Case: SOD-523 Plastic

Contextual Info: DAC7742 DAC 774 2 SBAS256A – DECEMBER 2002 – AUGUST 2007 16-Bit, Single Channel DIGITAL-TO-ANALOG CONVERTER With Internal Reference and Parallel Interface FEATURES DESCRIPTION ● LOW POWER: 150mW Maximum ● +10V INTERNAL REFERENCE ● UNIPOLAR OR BIPOLAR OPERATION

8644B

Abstract: AD8138 AD826 N-7075 marconi company TSMC 0.25Um
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 12-Bit 60MSPS Sampling Analog-to-Digital Converter IP nAD1260-25 FEATURES • • • • • • • • APPLICATIONS 2.5V power supply SNR typ 66dB for fin = 10MHz Low power (150mW@2.5V) Sample rate: 10-60MSPS Frequency dependent biasing

MS6167-35PDC

Abstract: MS6167-45PDC MS6167-55PDC MS6167L-35PDC MS6167L-55PDC
Contextual Info: y?3 lì MOSEL 16K x y/ > 's - / JL O 1 CMOS STATIC RAM MS 6167 January 1987 FEATURES • High-speed— 35/45/55/70ns • Low Power dissipation 150mW Typ. Operating 100|iW (Typ.) Standby • Single 5V power supply • Fully static operation • Input and output directly TTL compatible

DAC7731

Abstract: DAC7731E DAC7731EB
Contextual Info: DAC7731 DAC 773 1 SBAS249 – DECEMBER 2001 16-Bit, Voltage Output, Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● LOW POWER: 150mW MAXIMUM ● +10V INTERNAL REFERENCE ● UNIPOLAR OR BIPOLAR OPERATION ● SETTLING TIME: 5µs to ±0.003% FSR

SSESDL05-C

Contextual Info: SSESDL05-C 150mW , 5V Ultra-Low Capacitance ESD Protection Elektronische Bauelemente RoHS Compliant Product SOD-923 DESCRIPTION The SSESDL05-C is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability,

Switching Diodes

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS181 Features x x x • • • 150mW High Speed Switching Diodes 80 Volt Low Forward Voltage Low Leakage Current

TQFP48

Abstract: TSA0801 TSA1001 TSA1002 TSA1201 TSA1201IF TSA1201IFT marking code c41 SMD ic
Contextual Info: TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER • 40mW @5Msps, 150mW @ 50Msps ■ 2.5V supply voltage with 2.5V/3.3V compatibility for digital I/O Input range: 2Vpp differential SFDR up to 77dB @ 50Msps, Fin=15MHz ENOB up to10.5 bits @ 50Msps, Fin=15MHz Built-in reference voltage with external bias

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features • Lead Free Finish/RoHS Compliant "P" Suffix designates

CXD2306

Abstract: HFA1110 HI5780 HI5780-EV HI5780JCQ
Contextual Info: HI5780 TM Data Sheet August 1997 10-Bit, 80 MSPS, High Speed, Low Power D/A Converter • Throughput Rate . . . . . . . . . . . . . . . . . . . . . . . . 80 MSPS • Low Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150mW • Differential Linearity Error. . . . . . . . . . . . . . . . . . ±0.5 LSB

HSOP20

Abstract: MC33186DH1 sf transistor 8A SF diode MC33186 motorola automotive transistor MC33186 application note
Contextual Info: MOTOROLA MC33186 SEMICONDUCTOR TECHNICAL DATA Automotive H-Bridge Driver Datasheet SILICON MONOLITHIC INTEGRATED CIRCUIT Automotive H-Bridge Driver ¥ Operating Supply Voltage 5V to 28V ¥ Overvoltage Protection against Transients up to 40V at Vbat ¥ RDSon = 150mW for each Output Transistor at 25°C

2SC3875

Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
Contextual Info: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

Contextual Info: JOG-00754 Optical Components OL3204N-150-P20 Rev.3 [10. 2008 ] 1310nm+/-20nm 150mW Pulsed MQW Laser Diode DIL Module with SMF. 1. DESCRIPTION OL3204N-150-P20 is a 1310nm Laser Diode in DIL package with SMF. 2. FEATURES • Fiber output: Po=150mW · Pulsed MQW FP Laser

BZX84C5V6T

Abstract: BZX84C2V4T BZX84C2V7T BZX84C3V0T BZX84C3V3T BZX84C3V6T BZX84C3V9T BZX84C4V3T BZX84C4V7T J-STD-020D
Contextual Info: BZX84CxT Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.15 Watts FEATURES SOT-523 • Planar die construction • 150mW power dissipation rating • Ultra-small surface mount package SOT-523 Dim. A A1 b c D E E1

DL-8142-201

Abstract: ku 201
Contextual Info: INFRARED LASER DIODE DL-8142-201 Ver. 2 Features Apr. 2008 Tolerance : ±0.2 Unit : mm +0 ø5.6 -0.025 Package ø4.4 • Lasing wavelength : 830 nm (Typ.) • High output power : 150mW at 50°C (CW) • Threshold current : Ith= 50 mA (Typ.) ø3.55±0.1 ø1.6

ADSP1010JD

Contextual Info: ANALOG DEVICES □ FEATURES 16 x 16-Bit Parallel Multiplication/Accumulation 150mW Power Dissipation With CMOS Technology 165ns Multiply/Accumulate Time Improved TDC1010J Second Source Two's Complement or Unsigned Magnitude Data Formats Single + 5V Power Supply

Contextual Info: ANALOG DEVICES 12*12-Bit CMOS Multiplier/Accumulator ADSP-1009 FEATURES 12 x 12-Bit Parallel Multiplication/Accumulation 150mW Power Dissipation with CMOS Technology 130ns Multiply/Accumulate Time Improved TDC1009J Second Source Available in 64-Pin Ceramic DIPs, or 68-Terminal

Contextual Info: Data Sheet HL40041MG GaN Laser Diode 404nm/150mW Outline Features: • Operation temperature: -10~+50°C • Optical output power: 150mW CW • Violet lasing: 404nm Typ. • Low operating voltage: 5.0V Max. • Package: φ5.6mm • Multiple transverse mode

A-405

Contextual Info: DB3 BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts DO-41 0.107 2.7 0.080 (2.0) DIA. FEATURES A-405 1.0 (25.4) MIN. Power: 150mW The plastic package VBO:28-36V version Low breakover current High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length,

Contextual Info: Data Sheet HL63153AT preliminary AIGaInP Laser Diode 638nm/150mW Outline Features: • High optical output power: 150mW  Shorter wavelength: 638nm Typ.  Small package: 3.8mm  Low operating current: 230mA Typ.  Low operating voltage: 2.7V Typ.

M9-830-0050-S50

Abstract: M9-830-0150-S5P
Contextual Info: Product Specifications Features 830nm Single-Mode Laser Diodes • Up to 150mW CW output power. Description: • High Quality, Reliability, and Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 830nm single mode

PT2338

Abstract: 220uf r1c diode 6 channel audio amplifier circuit diagram MP27 6 channel audio amplifier 8 channel audio amplifier circuit diagram 350K
Contextual Info: PT2338 150mW Stereo Audio Power Amplifier DESCRIPTION FEATURES The PT2338 is a stereo power amplifier designed for the audio equipment; it is possible to delivery up to 150mW power to the 16Ω loads. Overall voltage gain is determine by the external resistors, for some