1509-50 5V Search Results

ZSDR-230

Contextual Info: Switch SPDT , 50Ω ZSDR-230+ Typical Performance Data FREQUENCY MHz 10 20 50 100 200 500 553 792 1000 1103 1342 1509 1653 1892 2131 2370 2609 2848 2920 3000 INSERTION LOSS TTL Low @ 0V (dB) IN-OUT , "ON" ISOLATION TTL High @ 5V (dB) IN-OUT , "OFF" IN (:1)

COM16

Abstract: ML9052 OKI M 5238
Contextual Info: Pr E2B0052-19-66 el im ar This version: Jun. 1999 ML9052 in y ¡ Semiconductor ML9052 ¡ Semiconductor 132-Channel LCD Driver with Built-in RAM for LCD Dot Matrix Displays GENERAL DESCRIPTION The ML9052 is an IC for dot matrix graphic LCD devices carrying out bit map display. This IC

irs 530

Abstract: 9051D diode+cross+reference+SL+1515
Contextual Info: J2B0053-19-64 ¡ 電子デバイス 作成：1999年6月 ML9050/9051 l ML9050/9051 暫定 液晶ドットマトリックス用132チャンネルRAM内蔵LCDドライバ n 概要

Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors

RN1507

Abstract: RN1508 RN1509 RN1907 RN1908 RN1909 RN2507 RN2509
Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit in mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors

RN1507

Abstract: RN1508 RN1509 RN1907 RN1908 RN1909 RN2507 RN2509
Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors

RN1507RN1509

Abstract: RN1508 RN1507 RN1509 RN1907 RN1908 RN1909 RN2507 RN2509
Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors

xi 1507

Abstract: Transistor 1507 tA 1507
Contextual Info: TOSHIBA RN1507-RN1509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RMi>;n7 R N i ç n a r m i s h q • * ■ v ■ M r ’*wr m g u « ■ m m m t g ■ « ■ v ■ v <*MT MT Unit in mm • • • • • Including Two Devices in SMV (Super Mini Type with 5 leads)

Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors

Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads) z With built-in bias resistors

Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507, RN1508, RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads) z With built-in bias resistors

Saronix

Abstract: S1509 S1500 Saronix 100 MHz oscillator SARONIX 94 smd diode code B2 S-1509 S-150-9 SMD 4608 28.6363MHZ
Contextual Info: SaRonix Voltage Controlled Crystal Oscillator 5V, HCMOS Technical Data ACTUAL SIZE S150x / ST150x Series Frequency Range: 1.5 MHz to 100 MHz Full Size 1.5 MHz to 28.6363 MHz ( Half Size ) Frequency Stability: ±20, ±25 or ±50 ppm over all conditions: operating

Contextual Info: RN1507~RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1507,RN1508,RN1509 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors

28.6363MHZ

Abstract: S1509 28.636 smd diode code B2 SMD MARKING CODE 202 S1500 5- pin smd vm, smd marking CA
Contextual Info: SaRonix Voltage Controlled Crystal Oscillator 5V, HCMOS Technical Data ACTUAL SIZE S150x / ST150x Series Frequency Range: 1.5 MHz to 100 MHz Full Size 1.5 MHz to 28.6363 MHz ( Half Size ) Frequency Stability: ±20, ±25 or ±50 ppm over all conditions: operating

Contextual Info: RN1507～RN1509 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1507,RN1508,RN1509 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

DI9952

Abstract: DS11509
Contextual Info: DI9952 VISHAY DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

Contextual Info: MEJ1 Series www.murata-ps.com 5.2kVDC Isolated 1W DC/DC Converters FEATURES n Basic/supplementary isolation to UL 609502 n UL60601 3rd Ed recognition2 n UL 94V-0 package material Single n Single and dual outputs n SIP package style n 5.2kVDC isolation n 3.3V, 5V, 12V, 15V & 24V inputs

KR-5R5C155-R

Contextual Info: Coin Cell Supercapacitors KR Series Features & Benefits: • • • • High specific capacitance Low leakage current Long cycle life Eco-friendly Typical Applications: Leaded Device Description Cooper Bussmann PowerStor® supercapacitors are unique, ultra-high capacitance devices utilizing

IRL520

Abstract: 027Q 561C
Contextual Info: PD-9.561C International S Rectifier IRL520 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive VDSS=100V • RDS on S pecified a t V g s =4V & 5V • 175°C Operating Temperature • Fast Switching • Ease of Paralleling

IRLZ14

Abstract: 556C
Contextual Info: International Rectifier P D -9 .5 5 6 C IRLZ14 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive ^ dss - 60V • RDS on Specified at V gs =4V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: 4A5 545 B DDlbOOO 400 * I N R International Hag Rectifier _ HEXFET Power MOSFET PD-9.558C IRLZ34 INTERNATIONAL R E C T I F I E R • Dynamic dv/dt Rating • Logic-Level Gate Drive • RDS on Specified at V gs=4V & 5V • 175°C Operating Temperature

IRLZ14

Contextual Info: International k Rectifier 4A55HS2 0 0 1 5 ^ 5*13 11 NR PD-9.556C IRLZ14 HEXFET® Power MOSFET b5E D INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching

IRL510

Abstract: MARKING sih
Contextual Info: International S Rectifier PD-9.560C IRL510 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • 175°C Operating Temperature • Fast Switching • Ease of Paralleling

pj 88 diode

Abstract: IRL530 pj 57 diode 562C mosfet ir 250p DIODE PJ 88
Contextual Info: PD-9.562C International Säg Rectifier IRL530 HEXFET P o w e r M O S F E T • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • V dss _ 100 V RDS on S p e cifie d a t V g s = 4 V & 5V • 175°C Operating Temperature • Fast Switching