15 AMP CURRENT 1000 VOLTS METAL DIODE Search Results

syntron rectifier

Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Contextual Info: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES

Contextual Info: WILLAS FM120-M+ SCS520STHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features Schottky barrier Diode process design, excellent power dissipation offers

schottky diode marking A7 SOD

Contextual Info: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

1N5827

Abstract: 1N5828 1N5826 1N5827 equivalent 1N5828 equivalent
Contextual Info: MOTOROLA Order this document by 1N5826/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet 1N5826 1N5827 1N5828 Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

MARKING CODE A25

Contextual Info: WILLAS FM120-M+ BAS70W-0x THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse

DIODE SOD-323 BAT54

Abstract: SOD323 diode schottky code marking 37
Contextual Info: WILLAS FM120-M+ BAT54:6THRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse

bridge faston 250

Abstract: KBPC10 KBPC15 KBPC25 KBPC2504PF KBPC35 KBPC3508S KBPC25-04
Contextual Info: FCI Semiconductor KBPC10.35XX Series Preliminary Data Sheet 10 to 35 AMP Single Phase Silicon Bridges_ «« Description KBPC10.35XX Series KBPCXXXXS series KBPCXXXXMW KBPCXXXXPF KBPCXXXXPW Features O O O Built in Integral Heat Sink UL Recognition Available

CMSD2004S

Contextual Info: WILLAS FM120-M+ MMBD2004SW THRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse

1n5819 equivalent

Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

Contextual Info: DIOTEC ELECTRONICS CORP 5ÖE D 204^107 QQ001S7 0 ^ HIDIX DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A1 0 3 '1 3 1 AMP FAST RECOVERY SILICON DIODES VOLTAGE RANGE 50 to 1000 Volts

Contextual Info: E DIOTEr ELECTRONICS CORP SflE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax:(310)767-7958 • 2flim G7 GOODlbl S I T H I D I X Data Sheet No.: FSDP-102-A3 ' T ' ,0'3> 1 AMP HIGH RELIABILITY FAST RECOVERY DIODES

bridge faston 250

Abstract: diodes bridge 10 Amp KBPC2504PF KBPC10 KBPC10XX KBPC15 KBPC1502PWU KBPC25 KBPC35 KBPC3508MW
Contextual Info: KBPC10XX . . . 40XX Series 10 to 40 Amp SINGLE PHASE SILICON BRIDGE Data Sheet Description Features n BUILT-IN INTEGRAL HEAT SINK n UP TO 400 AMP SURGE OVERLOAD RATING n UL RECOGNITION AVAILABLE n OPTION OF WIRE LEADS OR FASTON TERMINALS Electrical Characteristics @ 25o C.

diode marking 74 SOD123

Abstract: diode sod-123 marking code b3 schottky diode sod-123 marking code 120 sod123 B3 diode sod-123 marking code 120 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

QRD2412001

Contextual Info: QRD2412001 120 Amp PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 TM POW-R-BLOK Dual DIODE Module 120 Amperes / Up to 2400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated

IN4004G

Abstract: IN4007g IN4001G IN4003G IN4006G 12,000 volt 50 amp diode 1N4002G IN4005G IN4007 DB3 748
Contextual Info: DIOTEC ELECTRONICS CORP r v T P U Á .L , SfiE ]> I 204^107 nix GG00137 ETO DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No.: GPPD-100-A 'T - D l - \ 3 1 AMP SOFT GLASS-PASSIVATED SILICON DIODES

1N5817

Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1n5819 equivalent

Abstract: 1n5819
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

datasheets diode 1n5818

Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: DIOTEC ELECTRONICS CORP n T P u i . u SfiE ] • 204^107 GGGG137 ETO M P I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310)767-1052 Fax:(310) 767-7958 Data Sheet No.: GPPD-100-A <-t- oj i _ . o »• v 1 AMP SOFT GLASS-PASSIVATED SILICON DIODES

Contextual Info: DI OT EC E L E C T R O N I C S CORP SfiE V EflMTlO? GGOGIST ^bl « » I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

RP100G

Abstract: RP101G RP102G RP104G RP106G RP108G RP110G 275 A 23 200 E
Contextual Info: DIOTEC ELECTRONICS CORP SfiE V EflMTlO? GGOGIST ^bl « » I X DIOTEC ELECTRONICS CORP. Data Sheet No.: FSDP-102-A2 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

"Power Diode"

Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation