14MMX Search Results

IP60G

Abstract: sg07 V1625 MP5004-3 MP5004 fuse 13A Volex S-G-07 molded connector marking ADO
Contextual Info: DRAWING N UM BER: REVISION 1000201 H C A B LE CUTTING 15~18 CABLE SO UR CE : 1. GAO HtNG<SHENZHEN . 2. TONG YUAN SHENZHEN). 4 ± i3 . TA HSING(SHENZHEN) a 2 Q 5 0 ± 10 ASSEM BLY NEUTRAL(BLUE) LIVE(BROWN) —s/nnD—[*“T»—— t n_E • 170i§5 N ot«9 :

TC358700XBG

Abstract: TC35285 superflash 2006 cmos ram i2c lcd toshiba lvds LQFP80 QFP80 TC35285XBG TMP86FS28DFG TMP86FS28FG
Contextual Info: EYE 05 May 2006 東芝半導体情報誌アイ 2006年5月号 VOLUME 166 CONTENTS INFORMATION 新製品情報 フラッシュメモリ内蔵8ビットマイクロコントローラ .2

Contextual Info: TinyPowerTM A/D Type with LCD 8-Bit OTP MCU HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 Revision: V1.40 Date: ���������������� October 31, 2013 HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 TinyPowerTM A/D Type with LCD 8-Bit OTP MCU

Contextual Info: EM78P468NB/P470N 8-Bit Microcontroller Product Specification DOC. VERSION 1.2 ELAN MICROELECTRONICS CORP. November 2012 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

Contextual Info: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: ����������������� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM

OS10

Abstract: USB2229 MA13 MA12
Contextual Info: USB2229/USB2230 5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs PRODUCT FEATURES Datasheet IrDA Controller „ IrDA v1.1 FIR and SIR Compliant Controller, with 9.6K, 19.2K, 38.4K, 57.6K, 115.2K, 0.576Mbps, 1.152Mpbs and 4Mbps data rate support.

WED8L24257V

Abstract: DSP5630X
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

gw 360

Contextual Info: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,

128*64

Abstract: transistor GW 93 H GW 94 H
Contextual Info: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address

K7P801866M

Abstract: SA12 SA13
Contextual Info: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999

Contextual Info: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

WED8L24513V

Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

EDI2AG272129V

Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Contextual Info: EDI2AG272129V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst

Contextual Info: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,

EDI2CG472128V

Contextual Info: EDI2CG472128V 4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module contains eight (8)

WED2DG472512V-D2

Contextual Info: WED2DG472512V-D2 16MB 4x512Kx72 SYNC BURSTPIPELINE, DUAL KEY DIMM ADVANCED* FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FIG. 1 4x512Kx72 Synchronous, Synchronous Burst Pipeline Architecture; Single Cycle Deselect

Contextual Info: ma EDI2GG43264V 1Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS. INC. 4x64Kx32, 3.3V Module Features Sync/Sync Burst Flow-Through 4x64Kx32 Synchronous The EDI2KG43264VxxD is a Synchronous SRAM, 60 position, Card Edge DIMM 120 contacts Module, orga­

Contextual Info: EDI2CG472256V 8 Megabyte Sync/Sync Burst, Dual Key DIMM ELECTRONIC DESIGNS. INC. 4x256Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 4x256Kx72 Synchronous, Synchronous Burst The EDI2CG472256VxxD2 is a Synchronous/Synchro­ nous Burst SRAM, 84 position Dual Key; Double High

Contextual Info: K7P803611M K7P801811M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999

A13L

Abstract: IDT709269 IDT709269S
Contextual Info: PRELIMINARY IDT709269S/L HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.

GW 94 H

Abstract: EDI2CG472128VxxD2 transistor GW 93 H EDI2CG472128V
Contextual Info: White Electronic Designs EDI2CG472128V ADVANCED* 4 Megabyte Sync/Sync Burst, Dual Key DIMM DESCRIPTION FEATURES The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module

GW 94 H

Abstract: A015 EDI2GG464128V ICC3-400
Contextual Info: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight

Contextual Info: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Preliminary specification release Mar. 1999 Preliminary Rev. 1.0 - Final specification release

Contextual Info: K7P163612M K7P161812M 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Register-Latch Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document Aug. 2000 Advance Rev. 1.0 - V DDQ Min. changed to 1.4V - Package thermal characteristics added.