14JUL03 Search Results

770988-1

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBUCATION-^ E Q ELECTRONICS CORPORATION. REVISIONS ALL RIGHTS RESERVED. 00 CM -DESCRIPTION-REVISED PER 0 G 3 B -0 3 8 9 - 0 3 SC 14JUL03 CJ - 0.38 [.015 ]

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT E RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. REVISIONS CM 00 0 ELECTRONICS CORPORATION. -DESCRIPTION- -1 7 . 0 4 REVISED PER 0 G 3 B -0 3 8 9 - 0 3 14JUL03 SC CJ -1 1 . 8 1 5 0 .9 9 + 0 .0 3 —

SC-75A

Abstract: SC-89 Si1031R Si1031X marking code h
Contextual Info: Si1031R/X New Product Vishay Siliconix P-Channel 20-V D-S MOSFET 1.5−V Rated PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D D D

SUM27N20-78

Contextual Info: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V

31507

Abstract: SC-75A SC-89 Si1031R Si1031X
Contextual Info: Si1031R/X New Product Vishay Siliconix P-Channel 20-V D-S MOSFET 1.5−V Rated PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D D D

Contextual Info: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V

marking AD sc70-6

Contextual Info: Si1404DH New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.35 @ VGS = 4.5 V 1.57 0.45 @ VGS = 2.5 V 1.39 APPLICATIONS D Load Switch for Portable Devices 25 SOT-363

Si8407DB

Contextual Info: Si8407DB Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.027 @ VGS = - 4.5 V - 8.2 0.032 @ VGS = - 2.5 V - 7.5 0.045 @ VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View 5 S S D TrenchFETr Power MOSFET

Contextual Info: Si2319DS Vishay Siliconix New Product P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)b 0.082 @ VGS = - 10 V - 3.0 0.130 @ VGS = - 4.5 V - 2.4 APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 S 2

s3-1515

Abstract: SUM45N25-58
Contextual Info: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V

Si8407DB

Abstract: Si8902EDB
Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8407DB−T2, Si8902EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX

SUM27N20-78

Contextual Info: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V

Contextual Info: Si4955DY New Product Vishay Siliconix Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = - 4.5 V

Si6880AEDQ

Contextual Info: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V

Contextual Info: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.110 @ VGS = -4.5 V -2.5 0.145 @ VGS = -2.5 V -2.0 0.220 @ VGS = -1.8 V -1.0 D TrenchFETr Power MOSFETS D Symetrical Dual P-Channel

Si3993DV-T1

Abstract: SI3993DV
Contextual Info: Si3993DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.133 @ VGS = -10 V -2.2 0.245 @ VGS = -4.5 V -1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices

17709860

Abstract: RICS
Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBUCATION T - . DIST LOC ALL RIGHTS RESERVED. REVISIONS CM 00 p LTR F •0 .37 [.0 1 5 ] A MAX CUT-OFF TAB [.0 0 0 0 5 0 ] OR M IN APVD SC CJ N IC K E L. WIRE 3. IN S U L A T IO N RANGE: 4. DIM E N S IO N S IN RANGE:

raychem aa-400

Abstract: raychem aa 400 raychem heat shrinkable sleeve raychem solder sleeve J-STD-006
Contextual Info: SPECIFICATION CONTROL DRAWING MATERIALS 1. INSULATION SLEEVE: Heat shrinkable, transparent blue, radiation cross-linked modified polyvinylidene fluoride. 2. SOLDER PREFORM WITH FLUX: SOLDER: TYPE Sn63 per ANSI/J-STD-006. FLUX: TYPE ROL1 per ANSI/J-STD-004.

Contextual Info: 2R, 3R, 4R Vishay Foil Resistors Bulk Metal Foil Technology Molded Resistor Networks FEATURES THROUGH HOLE Product may not be to scale Unitized Resistor Networks are comprised of Vishay S102C elements combined and molded into single units. This method of making networks yields some important advantages that

Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel)

Si8407DB

Contextual Info: Si8407DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Provides Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance rDS(on) (W) ID (A)