SI4876DY Search Results

Si4876DY

Contextual Info: SPICE Device Model Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4876DY

Abstract: Si4876DY-T1
Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY

Siliconix

Abstract: Si4876DY
Contextual Info: SPICE Device Model Si4876DY N-Channel 20-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY

Si4876DY

Abstract: Si4876DY-T1-E3
Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.005 at VGS = 4.5 V 21 0.0075 at VGS = 2.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

SI4876DY

Contextual Info: Si4876DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

74646

Abstract: diode 1334 AN609 Si4876DY
Contextual Info: Si4876DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4876DY

Abstract: Si4876DY-T1
Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY

Si4876DY

Contextual Info: Si4876DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.005 at VGS = 4.5 V 21 0.0075 at VGS = 2.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.005 at VGS = 4.5 V 21 0.0075 at VGS = 2.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.005 at VGS = 4.5 V 21 0.0075 at VGS = 2.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Si4876DY

Abstract: Si4876DY-T1
Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel)

Si4876DY

Abstract: Si4876DY-T1
Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY

Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel)

Contextual Info: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

transistor t 2180

Contextual Info: MIC2582/MIC2583 Single-Channel Hot Swap Controllers General Description Features The MIC2582 and MIC2583 are single-channel positive voltage hot swap controllers designed to allow the safe insertion of boards into live system backplanes. The MIC2582 and MIC2583 are available in 8-pin SOIC and

Contextual Info: MIC2582/MIC2583 Single Channel Hot Swap Controllers General Description Features The MIC2582 and MIC2583 are single channel positive voltage hot swap controllers designed to allow the safe insertion of boards into live system backplanes. The MIC2582 and MIC2583 are available in 8-pin SOIC and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Si7892DY

Contextual Info: MIC2582/MIC2583 Single Channel Hot Swap Controllers General Description Features The MIC2582 and MIC2583 are single channel positive voltage hot swap controllers designed to allow the safe insertion of boards into live system backplanes. The MIC2582 and MIC2583 are available in 8-pin SOIC and