14FEB11 Search Results
14FEB11 Datasheets Context Search
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Contextual Info: REVISIONS D fiA iV lS G MADE IN AMERICAN PH O iEC T'O N B1 COZ^Máx B2 REVISED PER ECO-09-0221 78 ECR-10-022530 i 1 DWN DATE DESCRIPTION LTR APVD AEG KK 25SEP09 14FEB11 KK HMR !=P Jio a jC C T <*8> 3í í r 0 0 5 C1lA $3 i / * i 0,1 s D1A" (S W ns %}— |
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25sep09eco-09-0221ecr-10-02253014feb11 | |
C11040Contextual Info: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21 |
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sib437edktsc-752002/95/ecsc-75-6l-single+3 | |
CA-4050
Abstract: ca5100
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ca0001ca0002ca50002002/95/ec+3 | |
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Contextual Info: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21 |
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sib404dksc-752002/95/ecsc-75-6l-single+3 | |
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Contextual Info: Device Orientation Vishay Siliconix TR Device Orientation for TO-252 DEVICE ORIENTATION PACKAGE METHOD TO-252 TR Note • The TR designator is not inflected in the part number or ordering information. User Direction of Feed Revision control of this drawing is maintained through Document Control. |
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o-252x11-000614-febr-11pack-0007-26+1 | |
marking code vishay SILICONIX
Abstract: SIA915DJ
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sia915djsc-702002/95/ecsc-70-6+4 | |
N-Channel mosfet sot-363Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.) |
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si1539cdlot-363sc-70si1539cdl-t1-ge3+4 | |
67341
Abstract: si4403C si4403
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si4403cdy2002/95/ecsi4403cdy-t1-ge32011/65/eu+4 | |
TSOP752
Abstract: TSOP75230 TSOP75233 TSOP75236 TSOP75238 TSOP75240 TSOP75256 TSOP754
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tsop752tsop7542002/95/ec2002/96/ec+7 | |
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Contextual Info: RMK 55N, RMK 515N Vishay Sfernice Wirebondable High Precision Single Value Chip Resistors FEATURES • Precise tolerance from ± 0.01 % to ± 1 % Wide resistance ranges from 1 k to 2 M Actual Size The demand for high precision, high stability resistive chips |
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2002/95/0ec18-jul-08 | |
E123Contextual Info: VS-60EPU06PbF, VS-60APU06PbF Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified TO-247AC Cathode to base 2 Cathode |
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vs-60epu06pbfvs-60apu06pbfo-247ac2002/95/ec+2 | |
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Contextual Info: TSOP753., TSOP755. Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Compatible also with short burst dataformats • Supply voltage: 2.5 V to 5.5 V |
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tsop753tsop7552002/95/ec2002/96/ec+1 | |
SIA915DJContextual Info: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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sia915djsc-702002/95/ecsc-70-6+3 | |
sir662dpContextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • |
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sir662dp2002/95/ecsir662dp-t1-ge311-mar-11 | |
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Contextual Info: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses |
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si4392ady2002/95/ecsi4392ady-t1-e32011/65/eu+1 | |
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Contextual Info: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion |
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si7392adp2002/95/ecsi7392adp-t1-e3si7392adp-t1-ge3+2 | |
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Contextual Info: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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si7138dp2002/95/ecsi7138dp-t1-e3si7138dp-t1-ge3+2 | |
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Contextual Info: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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si7138dp2002/95/ecsi7138dp-t1-e3si7138dp-t1-ge3+1 | |
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Contextual Info: SQ7002K Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 1.30 RDS(on) () at VGS = 4.5 V 1.90 ID (A) 0.32 Configuration Single D TO-236 SOT-23 G • Halogen-free According to IEC 61249-2-21 |
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sq7002ko-236ot-23aec-q101+3 | |
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Contextual Info: CA Vishay Dale Wirewound Resistors, Commercial Power, Axial Lead FEATURES • High performance for low cost • Auto insertable • CA0001, CA0002 and CA5000 models are supplied with a high temperature silicone coating for additional environmental protection |
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ca0001ca0002ca50002002/95/ec+3 | |
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Contextual Info: Si7430DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 150 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Reduced dV/dt, Qgd and |
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si7430dp2002/95/ecsi7430dp-t1-e3si7430dp-t1-ge3+3 | |
TSOP75538
Abstract: TSOP75338 sony lcd tv circuit diagram free TSOP753 TSOP75330 TSOP75333 TSOP75336 TSOP75340 TSOP75356 TSOP755
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tsop753tsop7552002/95/ec2002/96/ec+9 | |
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Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21 |
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si4403cdy2002/95/ecsi4403cdy-t1-ge32011/65/eu+2 | |
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Contextual Info: Si7674DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0033 at VGS = 10 V 40 0.0046 at VGS = 4.5 V 40 Qg (Typ.) 37 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21 |
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si7674dp2002/95/ecsi7674dp-t1-e3si7674dp-t1-ge3+3 | |