SI4403 Search Results

67341

Abstract: si4403C si4403
Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21

Si4403BDY

Abstract: Si4403BDY-T1
Contextual Info: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7

4833

Abstract: 8891 AN609 Si4403BDY 1.2309
Contextual Info: Si4403BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21

67341

Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

MOSFET SO-8

Contextual Info: Specification Comparison Vishay Siliconix Si4403CDY vs. Si4403BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4403CDY-T1-GE3 replaces Si4403BDY-T1-GE3 Si4403CDY-T1-GE3 replaces Si4403BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403BDY

Contextual Info: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7

Contextual Info: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch

25783

Abstract: 2578-3 51540 676-42
Contextual Info: Si4403CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Si4403BDY

Abstract: Si4403BDY-T1 Si4403BDY-T1-E3
Contextual Info: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available

Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si4403CDY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

A1818

Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403BDY

Abstract: Si4403BDY-T1-E3 Si4403BDY-T1-GE3
Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403DY

Contextual Info: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch

SI4403BDY-T1-GE3

Abstract: Si4403BDY Si4403BDY-T1-E3
Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403DY

Contextual Info: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch

Si4403BDY

Contextual Info: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

A1818

Contextual Info: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available

Siliconix Handbook

Contextual Info: MIC5159 Micrel MIC5159 Programmable Current Limit µCap LDO Regulator Controller Advance Information General Description Features Micrel’s MIC5159 is a precision voltage regulator controller. Used with an external P-Channel MOSFET, the MIC5159 forms a two-chip low dropout regulator capable of driving a