1450 TRANSISTOR Search Results

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

transistor 832

Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

RO4350 properties

Abstract: RO4350 BLF7G15L-200 800B 15085
Contextual Info: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

BU 0603

Abstract: 800B BLF6G15L 029-KW
Contextual Info: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

BLF6G15L-40BRN

Abstract: 800B RO4350
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

13MM

Abstract: 817j18
Contextual Info: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

F1 J37

Abstract: b 595 transistor PH1516-60 PHI516160 wacom PHI516
Contextual Info: * z-,-3 y-z =: .-= z =z = an AMP company Wireless Bipolar Power Transistor, 1450 - 1550 MHz 60W PHI516160 Features Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point

PTF141501E

Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital

Contextual Info: 19-1450; Rev 0; 7/99 1.2A, Current-Limited, High-Side P-Channel Switch with Thermal Shutdown _Features ♦ +2.7V to +5.5V Input Range The MAX893L’s maximum programmed current limit is 1.2A. The typical short-circuit current is 1.5 times the

capacitor 330 j38

Abstract: Rogers 6010.5
Contextual Info: an A M P company Wireless Bipolar Power Transistor, 60W 1450- 1550 MHz PH1516-60 V2.00 _ 16.51 ’630 Features • • • • • • _ .4 0 0 _ (10.16) D esigned for l.inear Am plifier A pplications Class AB: -30 dBc Typ 3rd IMD at 60 W atts PKP Class A: + 5 3 dBm Typ 3rd O rd e r In te rc e p t Point

2SJ299

Abstract: mosfet 740 2SJ292 2sj298 2SJ294 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in

1450 transistor

Abstract: 1350 transistor 1314AB60
Contextual Info: R.1.A.052699-PHAN 1314AB60 60 Watts PEP, 25 Volts, Class AB Linear 1350 – 1400 MHz ADVANCED RELEASE GENERAL DESCRIPTION The 1314AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF output power over the band 1350-1400 MHz. This

PD57002

Abstract: PD57002S AN1294 0137 0904 907 TRANSISTOR smd
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

BTS 132 SMD

Abstract: AN1294 J-STD-020B PD57002-E PD57002S-E
Contextual Info: PD57002-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description

k1206

Abstract: RF Transistor 1500 MHZ
Contextual Info: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

2sk1299

Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in

PD54003

Abstract: PD54003S AN1294
Contextual Info: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD54008 PD54008S
Contextual Info: PD54008 PD54008S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 11.5 dB gain @ 500 MHz / 7.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead

transistor smd po3

Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

PD55015

Abstract: PD55015S AN1294
Contextual Info: PD55015 PD55015S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 14 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead

k 3436 transistor

Abstract: J-STD-020B PD54003-E PD54003S-E PD54003STR-E PD54003TR-E RF Transistor s-parameter s22f 6 pin
Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package PowerSO-10RF formed lead