14400A Search Results

Contextual Info: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 14400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the 14400A/AL is OKI's CMOS silicon gate process technology.

DCR1080G22

Abstract: DCR1080G18 DCR1080G20
Contextual Info: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.3 August 2007 LN25531 KEY PARAMETERS FEATURES Double Side Cooling VDRM IT(AV) ITSM dV/dt* dI/dt High Surge Capability APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs * Higher dV/dt selections available

dcr1080

Contextual Info: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.0 FEBRUARY 2005 LN23798 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs High Power Drives

Contextual Info: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.1 May 2005 LN23941 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs High Power Drives

814400a

Abstract: MB814400A
Contextual Info: March 1992 Edition 1.0 DATA SHEET FUJITSU : M B 8 14400A-60/-70/-80 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu M B 14400A is a fully decoded C M O S Dynamic RA M D R A M that contains 4,194,304 memory cells accessible in 4 -b it increments. T h e M B 14400A features a f a s t pag e’ mode of

AZL-70

Contextual Info: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The 14400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the

Magnetic Field Sensor

Abstract: max 232 DM-232
Contextual Info: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is

514400A

Abstract: M514400A 514400AZ
Contextual Info: 14400A S e rie s -14400AL Series Low Power Version 14400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory 14400AJ/A LJ/A LSJ Series • DESCRIPTION The Hitachi 14400A is a C M O S dynamic RAM organized 1,048,576 word x

DCR1080G22

Abstract: dcr1080
Contextual Info: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.2 JULY 2006 LN24663 FEATURES • Double Side Cooling • High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS • High Power Drives • High Voltage Power Supplies

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

Contextual Info: TOSHIBA TC514100ASJL/AFIL60/70/80 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC514100A SJL/A FTL is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514100A SJL/A FTL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit

Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The 14400ASJL/AFTL/ATRL is the new generation dynam ic RA M organized 1,048,576 word by 4 bit. The 14400ASJL/AFTL/ATRL utilizes T oshiba’s CM OS silicon gate process technology as w ell as

tc511000aj

Contextual Info: TOSHIBA THM362020AS/ASG -60/70/S0 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 14400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as

mt4c4001

Abstract: MT4C4001-6 TC51440 20PIN MT4C4001-10 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10
Contextual Info: 235 - 4M CMOS X íiSícffl m % ît £ °C TRAC max (ns) TRCY (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 4) Í TCAD min (ns) 2 0 P I N ¡if. TAH min (ns! TP min (ns) TWCY min (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) I DD max (raA) À I DD STANDBY

ZIP20-P-400A

Abstract: toshiba a75 TSOP26-P-300 TC514400ASJ
Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE 14400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The 14400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

EJ350

Contextual Info: O K I semiconductor 14400A/AL_ 1,048,576-Word x 4-Bit DYNAM IC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The M SM 14400A/A L is a new g en e ra tio n dynam ic RAM o rg a n ize d as 1,048,576-word x 4-bit. Th e te c h n o lo g y used to fa b ric a te th e M SM 5 1 4 4 0 0 A /A L is O K I's CM O S s ilico n g a te process

Contextual Info: 1 ,0 4 8 ,5 7 6 W O R D PRELIMINARY y . 4 BIT D Y N A M I C R A M D ESC R IP TIO N The 14400AP/AJ/ASJ/AZ is the ne’.v generation dynamic HAM organized 1,048,576 words by 4 bits. The 14400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well

512kx4

Abstract: SOJ26-P-350 1024X1024X4
Contextual Info: 4400AP/AJ/ASJ/AZ-80 j g g g g P/AJ/ASJ/AZ-10 m Ë È Mm ê s M S ii* ® S m PRELIMINARY 1,048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The 14400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well

Contextual Info: 14400A S e rie s -14400AL Series Low Power Version 14400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random A c ce s s Memory HM 14400AJ/AU/ALSJ Series • DESCRIPTION The Hitachi 14400A is a C M O S dynamic RAM organized 1,048,576 word x

ic 4800

Abstract: IGBT module FZ 1200
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 2400 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

56G1

Abstract: HB56G18B-8A HM514400
Contextual Info: HB56G18 Series 1,048,576-Word x B-Bit High Density Dynamic RAM Module • DESCRIPTION The H856G18 is a 1M x 8 dynamic RAM module, mount­ ed two 4 Mbit DRAM 14400AS sealed in SOJ pack­ age. An outline of the HB56G18 is 30-pin single in-line pack­ age (socket type).

95A sensor hall

Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Contextual Info: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.

HY514400-80

Abstract: hitachi 1k x 4 HM514402 HM514402A-7 20PIN HM514400JP-10 hitachi r 150 HM514410AL-7 Hitachi Scans-001
Contextual Info: - 233 4M CMOS w % tt £ CC TRAC max ns) A D y n a m i c &• > y n R A M (1 0 4 8 5 7 6 x 4 ) tt 2 0 P I N m 7, TRCY min (ns) TCAD min (ns) TAI-i min (ns) TP mi n (ns) TCCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C I DD (V) (mA) Â I DD STANDBY

Contextual Info: . - - IU 11 14400APL/AJL/ASJL/AZL-70, 14400APL/AJL/ASJL/AZL-80 14400APL/AJL/ASJL/AZL-10 PRELIMINARY 1,048,576 WORD x 4 BIT DYNAM IC RAM DESCRIPTION The 14400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as