1430N Search Results

laser DFB 1350nm

Abstract: 1350nm 1270nm DFB Laser Diode 1510nm
Contextual Info: 1.27um-1.61um MQW-DFB Laser Diodes for CWDM C-1XXXA-DFB-E-xxx-NT Absolute Maximum Rating Tc=25ºC Parameter Symbol Value Unit Po 8(CW) mW VRLD 2 V LD Forward Current IFLD 150 mA PD Reverse Voltage VRPD 15 V PD Forward Current IFPD 2.0 mA Operating Temperature

laser DFB 1350nm

Abstract: 1350nm
Contextual Info: 1.27um-1.61um MQW-DFB Laser Diodes for CWDM C-1XXXA-DFB-E-XX-NT Absolute Maximum Rating Tc=25ºC Parameter Symbol Value Unit Optical Output Power Po 8(CW) mW LD Reverse Voltage VRLD 2 V LD Forward Current IFLD 150 mA PD Reverse Voltage VRPD 15 V PD Forward Current

1430N

Contextual Info: MITSUBISHI ICS VCR M52357SP/VP FM EQUALIZER DESCRIPTION The M 52357 has an FM signal equalizer for playback, PIN CONFIGURATION (TOP VIEW) low-pass and high-pass filter for recording, and recording EQ-HB O U T E Rec Sig. OUT p [ EQ-LB OUT g VCA 2 U level adjuster.

MXP4000

Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

LX3051

Abstract: 1550nm catv receiver Photodiode 1550nm bandwidth photodiode responsivity 1550nm 2 sensitivity dB photodiode pin 1550nm 3Gbps InGaAs Photodiode 1550nm vcsel 1310
Contextual Info: LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers,

1350nm

Abstract: SLT2486-LN SLT2486 E855A h885 xnnnx HUW0824103-01A RH2-xnnnx
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SLT2480-xN/RH2-xnnnx Series Document No.: HUW0824103-01A Data of issue: August 19, 2008 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module: Transmitter Optical Sub-assembly in small PKG for CWDM of 2.5Gb/s transmission

HA 13645

Abstract: 1367034-1 scp6ee8 SCP6 1270nm DFB Laser Diode ExceLight Communications SCP6EE8-GL G957 GR-253 RD12
Contextual Info: Specification : TS-S03D111D March, 2007 Technical Specification for Small Form Factor Pluggable SFP SCP69E8-GL-#N-xx (No Diagnostic Monitoring) SCP6EE8-GL-#N-xx (Diagnostic Monitoring with External Calibration) 155.52M bp s 622.08M bps Short H aul Long H a ul

xnnnx

Abstract: HUW9924208-01I 1350nm SLT4410-xnnnx K605A mqw-dfb* 1550nm D 1427 k605
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4410-xnnnx Series HUW9924208-01I January 14, 2008 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission SLT4410-xnnnx Series

10Enhanced

Abstract: SCP6* SFP sumitomo SCP6NN4-GL
Contextual Info: Specification : TS-S07D129A November, 2007 Technical Specification for Small Form Factor Pluggable SFP SCP6NN4-GL-#N-xx (Diagnostic Monitoring with External Calibration) Up to 1.25Gbps Multi Rate other _ _ 155.52M bp s 622.08M bps Short H aul Long H a ul

SFP 1350nm

Abstract: sfp 1530nm
Contextual Info: 24926 Highway 108 Sierra Village, CA 95346 Phone: 800 545-1022 Fax: (209) 586-1026 E-Mail: sales @olsontech.com 1.25Gb/s Single-mode SFP Transceivers with Dual LC Connectors Features and Benefits Compatible with Olson’s Model OTDV-1250 Transport Link to

LX3050

Abstract: LX3052 InGaAs array 1550nm
Contextual Info: LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The LX305X series of coplanar waveguide photo diodes are currently offered in die form allowing manufacturers the versatility of

25um

Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes

InGaAs array 1550nm

Contextual Info: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar

PIN photodiode responsivity 1550nm 1.1

Abstract: PIN photodiode InGaAs 1550nm PIN Photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz InGaAs Photodiode 1550nm PIN photodiode responsivity 1550nm 2,5 GHz InGaas PIN photodiode flipchip PIN Photodiode 1310nm
Contextual Info: Obsolete Product – not recommended for new design LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ LX3051 single die Coplanar Waveguide , 50 ohm High Responsivity Low Dark Current

Microsemi LX3055

Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
Contextual Info: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and

Contextual Info: Stratos Optical „ Connectivity for Business Critical Continuity 2.97G CWDM Dual Transmitter Video SFP FEATURES SMPTE 424M/297M compliant SMPTE 292M/259M/297M compatible Based on industry standard SFP RoHS-6 compliant Handles pathological test pattern Internally Calibrated Digital Diagnostic Monitoring

SCP6NK1-GL

Abstract: scp6nk1 SFP finisar 1310 80km 1350nm AT24C01A G957 GR-253 RD12 sfp 1310nm 60EH
Contextual Info: Specification : TS-S06D215D October, 2007 Technical Specification for Small Form Factor Pluggable SFP SCP6NK1-GL-##-xx (Diagnostic Monitoring with External Calibration) 155.52Mbps 622.08Mbps other _ Short Haul Intermediate Reach Long Haul Long Reach

xnnnx

Abstract: 1350nm 1450nm laser diode HUW9924209-01E 1370nm h885 HUW9924209-01D E855A G675 1450nm
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT2420-xN-xnnnx Series HUW9924209-01E December 04, 2002 Preliminary Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module: Transmitter Optical Sub-assembly for CWDM of 622Mb/s and 2.5Gb/s transmission

SFP finisar 1310 80km

Abstract: 6en4 6 pin laser diode 1550nm analog receiver RD12 finisar A0h 1040-11 60EH laser DFB 1350nm
Contextual Info: Specification : TS-S03D182B March, 2005 Technical Specification for Small Form Factor Pluggable SFP SCP69N4-GL-#N-xx (No Diagnostic Monitoring) SCP6EN4-GL-#N-xx (Diagnostic Monitoring with External Calibration) Up to 1.25Gbps Multi Rate other _ _

HA 13645

Abstract: AT24C01A G957 GR-253 RD12 1270nm DFB Laser Diode
Contextual Info: Specification : TS-S06D280B November, 2007 Technical Specification for Small Form Factor Pluggable SFP SCP6NB8-GL-#N-xx (Diagnostic Monitoring with External Calibration) Up to 2.67Gbps Multi Rate other _ _ 155.52M bp s 622.08M bps Short H aul Long H a ul

Contextual Info: Specification : TS-S03D185E March, 2005 Technical Specification for Small Form Factor Pluggable SFP SCP69K1-GL-##-xx (No Diagnostic Monitoring) SCP6EK1-GL-##-xx (Diagnostic Monitoring with External Calibration) 155.52M bp s 622.08M bps Short H aul Long H a ul

sumitomo

Abstract: SCP6 1430nm
Contextual Info: Specification : TS-S04D169C March, 2005 Technical Specification for Small Form Factor Pluggable SFP SCP69L2-GL-##-xx (No Diagnostic Monitoring) SCP6EL2-GL-##-xx (Diagnostic Monitoring with External Calibration) 155.52M bp s 622.08M bps Short H aul Long H a ul

SCP6

Contextual Info: Specification : TS-S03D159C March, 2005 Technical Specification for Small Form Factor Pluggable SFP SCP69P4-GL-#N-xx (No Diagnostic Monitoring) SCP6EP4-GL-#N-xx (Diagnostic Monitoring with External Calibration) 155.52M bp s 622.08M bps Short H aul Long H a ul

Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively