140MA Search Results

Contextual Info: TGA4031-SM 17 – 40 GHz MPA/Multiplier Key Features • • • • • • RF Output Frequency Range: 17 - 40 GHz 22 dB Nominal Gain 22 dBm Nominal Output Maximum Power 2x and 3x Multiplier Function Bias: Vd = 5V, Id = 140mA Package Dimensions: 3.0 x 3.0 x 1.17 mm

Front Monitor Diode

Abstract: 400X EL6273DCU MDP0040
Contextual Info: 3-Channel Laser Diode Driver w/Oscillator & APC Amplifier Features General Description • “Shrink-Small” Outline Package • Voltage-controlled output current source to 140mA per channel, requiring one external set resistor per channel • Current-controlled output current

Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04029N1H-T Features Item Summary 9.1nH(±3%), 140mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 20000pcs

video hdmi circuit diagram

Contextual Info: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device

Contextual Info: CM OS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. » Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM 64258C-12 : 150mA (max.) KM 64258C-15 : 140mA (max.)

D-90441

Abstract: R1005250L
Contextual Info: Product Specification R1005250L Si Reverse, low current, 5 – 100MHz, 25.4dB typ. Gain @ 100MHz, 140mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise

2SA12

Abstract: c2911 SA1209 2SA1209 2sc291 2SC2911 A1209 120EI
Contextual Info: Ordering num ber: EN779C _ 2SA12Q9/2SC2911 PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features • Adoption o f FBET process • High breakdown voltage • Good linearity o f hpE and small

IRF 260 N

Abstract: PVT412 photovoltaic Relay Series PVT412 PVT412L PVT412LS PVT412LS-T PVT412S PVT412S-T
Contextual Info: Data Sheet No. PD 60040 revK Series PVT412 & PbF Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-400V, 140mA AC/DC General Description The PVT412 Series Photovoltaic Relay is a singlepole, normally open solid-state relay that can replace

Contextual Info: Data Sheet No. PD 60040 revH Series PVT412 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-400V, 140mA AC/DC General Description The PVT412 Series Photovoltaic Relay is a singlepole, normally open solid-state relay that can replace

DIN45004B

Abstract: R2005350L
Contextual Info: Product Specification R2005350L Si Reverse, low current, 5 – 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise

Contextual Info: Ordering number : EN779C 2SA1209/2SC2911 No.779C SAHYO PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications i Features • A d o p tio n o f F B E T process • High breakdown voltage • G ood linearity o f h F E and small C o b

Contextual Info: TGA4030-SM 17 – 37 GHz MPA/Multiplier Key Features • • • • • • RF Output Frequency Range: 17 - 37 GHz 20 dB Nominal Gain 22 dBm Nominal Output Maximum Power 2x and 3x Multiplier Function Bias: Vd = 5V, Id = 140mA Package Dimensions: 3.0 x 3.0 x 1.1 mm

Contextual Info: KM68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15 : 150mA (max.) KM68257B-20: 140mA (max.) KM68257B-25: 130mA (max.)

Contextual Info: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 :140mA (max.) KM6465B-15 :130mA (max.) KM6465B-20 :120mA (max.)

Contextual Info: Product Specification R0605250L Si Reverse, low current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 140mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise

Contextual Info: R1154x Series 150mA 24V Input VR with/without Adjust pin The R1154x Series are CMOS-based 24V input voltage regulators featuring 150mA output 2.5V ≤ VOUT ≤ 2.9V, 140mA . In addition to B version with the internally fixed output voltage, C version with adjustable output voltage with an external resistor is also available. In

Contextual Info: R1154x Series 150mA 24V Input VR The R1154x Series are CMOS-based 24V input voltage regulators featuring 150mA output 2.5V < = VOUT < = 2.9V, 140mA . In addition to B version with the internally fixed output voltage, C version with adjustable output voltage with an external resistor is also available. In

Contextual Info: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device

Contextual Info: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device

TPS60150

Abstract: TPS60150DRVR TPS60150DRVT
Contextual Info: TPS60150 www.ti.com. SLVS888A – DECEMBER 2008 – REVISED APRIL 2009 TPS60150 5V/140mA Charge Pump Device FEATURES

Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAN02TA560J Features Item Summary 56 H ±5% , 140mA, 50, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.6(max)x2.4(max)mm

Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAP02TA180K Features Item Summary 18 H ±10% , 140mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm

Contextual Info: CPC3730 N-Channel Depletion-Mode FET PRELI M I N ARY BVDSX/ BVDGX 350VP RDS ON (max) 30Ω IDSS (min) Package 140mA SOT-89 Features • • • • • • Low RDS(ON) at Cold Temperatures RDS(on) 30Ω max. at 25ºC High Input Impedance High Breakdown Voltage: 350VP

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBL2012T470M Features Item Summary 47 H(±20%), 100mA, 140mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table External Dimensions