140 9632 Search Results

Contextual Info: PART NUMBER LED COLOR 521-9630 RED 521 SERIES 521-9631 YELLOW 2mm Discrete LED Diffused 521-9632 GREEN SPECIFICATIONS Dimensions in inches ABSOLUTE MAXIMUM RATINGS TA= 25OC RED -9630 YELLOW GREEN -9631 -9632 Power Dissipation (mW) 105 105 105 Average Forward Current (mA)

auirf540

Abstract: AUIRF540Z AUIRF540ZS
Contextual Info: PD - 96326 AUTOMOTIVE GRADE Features l l l l l l l AUIRF540Z AUIRF540ZS HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

pbt-GF30

Abstract: DIN 16901 140
Contextual Info: ,2003. ï MATED WITHi PASSEND ZU. ï ï 963207 DI5T REVISIONS 1 P PROJECT NR.i 89-52072 A-A AENDERUN6EN DESCRIPTION BESCHREIBUNG '— CO RELEASED FOR PUBLICATION i‘l7 jl LIUÜlLLjlfflltfuilL •. FREI FUER VERQEFFENTLICHUNS COPYRIGHT 2003 BY AMP INCORPORATED. Â t / j S g / S r K S B À L T E N .

PBT-GF30

Abstract: Tyco PBT-GF30 DIN 16901 140 1-962340-1 PBTGF-30 EGOO-1630-03 D9020 pbtgf30 AMP PBT-GF30 tyco pbtgf30
Contextual Info: ,2003. ï MATED WITHi PASSEND ZU. ï ï 963207 DI5T REVISIONS 1 P PROJECT NR.i D LTR HI 89-52072 A-A AENDERUN6EN DESCRIPTION BESCHREIBUNG '— CO RELEASED FOR PUBLICATION i‘l7 jl LIUÜlLLjlfflltfuilL •. FREI FUER VERQEFFENTLICHUNS COPYRIGHT 2003 BY AMP INCORPORATED. Â t / j S g / S r K S B À L T E N .

AUIRFB4610

Abstract: AUIRF ultra fast diode to220 AN-994 AUIRFS4610
Contextual Info: PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

auirfb3207

Contextual Info: PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

Contextual Info: PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features l l l l l l l V BR DSS D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD - 96324 AUTOMOTIVE GRADE AUIRFS4310 AUIRFSL4310 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

SL4310

Abstract: AN-994 AUIRFSL4310 AUIRFS4310
Contextual Info: PD - 96324 AUTOMOTIVE GRADE AUIRFS4310 AUIRFSL4310 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

7C109A

Abstract: 8361H CY7C1009 JESD22 CY7C109-VC
Contextual Info: Qualification Report December 1996, QTP# 96322, Version 1.1 CY7C1009 128K x 8 Static RAM - 32-Pins, 300-mil SOJ PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

IRFHM830DTR2PBF

Abstract: IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830
Contextual Info: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters

Contextual Info: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 4.3 mΩ 13 1.1 nC D 5 D Qg (typical) RG (typical) ID 40 (@Tc(Bottom) = 25°C) Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters

IRFB3607

Abstract: IRFB3607GPBF
Contextual Info: PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic

AUFR2607Z

Abstract: AN-994 AUIRFR2607Z dk45
Contextual Info: PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

AUFR2905Z

Abstract: AUIRFR2905Z
Contextual Info: PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

Contextual Info: PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

AUFR2905Z

Contextual Info: PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

140 9632

Abstract: AD9631AR-REEL7
Contextual Info: a Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps AD9631/AD9632 FEATURES Wide Bandwidth AD9631, G = +1 AD9632, G = +2 Small Signal 320 MHz 250 MHz Large Signal 4 V p-p 175 MHz 180 MHz Ultralow Distortion (SFDR), Low Noise –113 dBc typ @ 1 MHz

Contextual Info: BACK a Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps AD9631/AD9632 FEATURES Wide Bandwidth AD9631, G = +1 AD9632, G = +2 Small Signal 320 MHz 250 MHz Large Signal 4 V p-p 175 MHz 180 MHz Ultralow Distortion (SFDR), Low Noise –113 dBc typ @ 1 MHz

RF1255

Abstract: AD9631-EB AD9621 AD9622 AD9631 AD9631AN AD9632
Contextual Info: a Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps AD9631/AD9632 FEATURES Wide Bandwidth AD9631, G = +1 AD9632, G = +2 Small Signal 320 MHz 250 MHz Large Signal 4 V p-p 175 MHz 180 MHz Ultralow Distortion (SFDR), Low Noise –113 dBc typ @ 1 MHz

PAC1000

Abstract: SAM448 DALLAS 2501 PSD100 WS27c010 Waferscale Integration pac1000 IR 9515 datasheet 9435, ic BA 9706 K Microcontroller AT89C51 plcc 44 pin details
Contextual Info: Reliability Summary 1999 Waferscale Integration, Inc. Reliability Summary 1999 Copyright 1999 Waferscale Integration, Inc. All rights reserved. 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-5916 Web Site: http://www.waferscale.com

CV98Q250

Abstract: CV98F2R5 CV99P250 CV99N180 CV990350 CV99Q400 max 9694 e 140 9632 CV99M100 OZ 9910 g
Contextual Info: J OHA N S ON MANUFACTURING MME 1 to 4.5pF .25 to 7pF 1 to 5pF .5 to 1.3pF 1.5 to 4pF Mr Sìl'Hìifìi <^ w r? N 4j *6 t0 2pF 2.5 to 10pF '©s S'ä^üAU1 ii^iy .6 to 2.5pF 3 to 12pF WSk M^7ÔMSÔ Q Q D 0 S 7 3 b B D 4 to 18pF 6to35pF 5 to 15pF 7to40pF g