13T TRANSISTOR Search Results

Contextual Info: Philips Semiconductors • Product specification bb53^31 OOBOObH <13T « A P X VHF push-pull power MOS transistor BLF368 N AMER PHILIPS/DISCRETE bTE PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: SANKEN ELECTRIC CO LTD SSE D • 7^07*41 000CH71 13T » S A K J Silicon NPN Triple Diffused Planar ^ ☆Switching Transistor SC3890 Application Example : S S - fs e Outline Drawing 4 . . FM20 Switching Regulator and General Purpose Electrical Characteristics

180x180

Contextual Info: SEMTECH CORP SflE D • ô 13T 1 3 T 0D03M5fl 1Q1 « S E T COMPLEMENTARY DARLINGTON TRANSISTORS COLLECTOR CURRENT PK A CONT (A) DIE DIMENSIONS (MILS) NPN 60 30 200x210 PNP 60 30 210x210 100 NPN 40 20 180x180 100 PNP 40 20 180x180 150x150 DEVICE SERIES OUTPUT

transistor 1264-1

Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
Contextual Info: Philips Semiconductors IH ^ 53*131 GG3 1 2 2 2 13T H A P X ^^^Productspecification NPN 5 GHz wideband transistor “ 1 £ N DESCRIPTION A ME R BFG90A P H IL IP S /D IS C R E T E b 'I E D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope.

Contextual Info: HARRIS SEIUCOND SECTOR m SfiE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H • 43D2271 GD4Sh72 13T H H A S 2N7271U, 2N7271H 2N7271H . Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 14A, 100V, RDS<on)» 0.180Q

transistor m6e

Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.

inductive proximity detector ic

Abstract: VD neosid ablebond 293-1 NEOSID NEOSID 22 metal detector coil DIAGRAM neosid 10 metal detectors IC neosid CAP OM386M
Contextual Info: • bbS3T31 0032745 13T H A P X N AMER PHILIPS/DISCRETE O M 386M O M 387M b'IE D HYBRID IN TE G R A TE D C IR C U IT S FOR IN D U C TIVE P R O X IM IT Y D E T E C T O R S Hybrid integrated circuits intended fo r inductive p ro xim ity detectors in tubular construction,

2N6028 Application Note

Abstract: unijunction application note transistor 2n6027 2N6027 transistor put 2n6028 D13T D13T4 2N6028 D13T3 "Programmable Unijunction Transistor"
Contextual Info: Silicon Programmable Unijunction Transistor D13T SERIES D13T3 D13T4 [PUT T h e G e n e ra l Electric D 13T 3 a n d D 1 3 T 4 a r e 100 volt versions o f th e p o p u ­ lar 2N 6 0 2 7 an d 2N 6 0 2 8 P r o g r a m m a b l e U n iju n c tio n T r a n s is to rs P U T ) .

Contextual Info: KST24 NPN EPITAXIAL SILICON TRANSISTOR VHF MIXER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

IC N6555

Abstract: N6555 2N6549 2N6558 N6554 2n6556 2N6548 2N6551 2N6552 2N6553
Contextual Info: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50

N6555

Abstract: 2N6593 2n6557 2N6558 IC N6555 2N6552 to 202 case 2N6548 2N6549 2N6551
Contextual Info: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50

Contextual Info: Ordering number: EN 938B 2SC3042 i SANYO NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications Features . High breakdown voltage VCBQ=500V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage

Contextual Info: 2SB944 Pow er Transistors 2SB944 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1269 •Features • • • • Unit ! mm 4.4max. 2.9max J0.2max. 5.7tnax. Low collector-emitter saturation voltage VcEisa»

Contextual Info: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

NEM0899F01-30

Abstract: 13t transistor broadband impedance transformation
Contextual Info: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ G2

NEM0899F01-30

Abstract: 13t transistor broadband impedance transformation
Contextual Info: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ • HIGH DYNAMIC RANGE

2T3107

Abstract: 2T3 transistor CMBT3905 marking d7b
Contextual Info: CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arkin g CM BT3905 = 2Y P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 A BSO L U TE M A X IM U M R A TIN G S C ollector-base voltage open emitter

Contextual Info: SGS1H0MS0N 57. AM82731-012 ;IL11 ¥ M [ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS P R E LIM IN AR Y DATA i R E F R A C T O R Y /G O L D M ETA LL IZA TIO N • E M IT T E R S ITE BALLASTED ■ LO W T H E R M A L R E S IS T A N C E ■ IN P U T /O U T P U T M A T C H IN G

Contextual Info: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 5 4 ±0.1 6 ±0.1 0.9 1 2 2.1 Type Code 1.25±0.1 2 2 x 0.65 3 2.4

MARKING CODE 13t sot363

Abstract: transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING
Contextual Info: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 2 2 x 0.65 4 1 2 2.1 Type Code 1.25±0.1 5 ±0.1 6 0.9±0.1 3 2.4

2SC4541

Abstract: 2SA1736 transistor marking 7D
Contextual Info: T O S H IB A 2SC4541 2SC4541 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)

Contextual Info: T O SH IB A 2SC2873 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2873 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V ( j e ( s a t) = 0-5V (Max.) High Speed Switching Time : tg^=1.0/<s (Typ.) P q = 1~2W (Mounted on Ceramic Substrate)

EO75

Abstract: 2SD1391 OF IC 713
Contextual Info: Power Transistors 2SD1391 2SD1391 Silicon N PN Triple-D iffused Junction M esa Type • Package D im ensions H orizontal D eflection O utput ■ Features • H igh b re a k d o w n v o lta g e and high reliability by g lass p assiv atio n • H igh s p e e d sw itch in g

Contextual Info: m ROHM CO LT» 4 GE ]> 7 â 5 ê cm OQGS7S7 h 7 > ÿ X $ / T ransistors 3 BRHH 2SC3269 7 -2 7-/S~ 2SC3269 ¡ S I Î Œ i l Î i f f i / H i g h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors "i& M '.' î V 'J i t - • W f ê 't f î il l/ D im e n s io n s U n it : mm