13DBMW Search Results

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW

TA4107F

Abstract: H241 MT4S 4107F
Contextual Info: TA4107F 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA4107F 1 GHz 帯ダウンコンバータ CATV Analog/Digital Tuner Terrestrial Digital TV Tuner 特 長 • 高入力低歪 IIP3 : +13dBmW • 低 Lo 注入レベル : −5dBmW

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW

TA4107F

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW · Performance at low Lo signal input: −5dBmW

TA4107F

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW

Contextual Info: T O SH IB A 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

2SK2854

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

2sk3656

Abstract: MARKING CODE c5 sc-62
Contextual Info: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

2SK3656

Contextual Info: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

MARKING CODE c5 sc-62

Contextual Info: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

2SK2854

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

TOSHIBA Semiconductor Reliability Handbook

Abstract: 2SK2854
Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use

2SK3656

Contextual Info: 2SK3656 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK3656 ○ VHF/UHF 帯電力増幅用 ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途

2SK3656

Abstract: MARKING CODE c5 sc-62
Contextual Info: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

Contextual Info: TOSHIBA S-AU77 TOSHIBA RF PO W ER AM PLIFIER MODULE S-AU77 800MHz UHF PO W ER AM PLIFIER MODULE E-TACS • High Gain (Gp = 18.5dB Min.) M A X IM U M RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC DC Supply Voltage DC Supply Voltage Input Power Operating Case Temperature Range

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

77N TOSHIBA

Abstract: 2SK2854
Contextual Info: TOSHIBA 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

Contextual Info: TOSHIBA S-AU76 TOSHIBA RF PO W ER AM PLIFIER MODULE S-AU76 800MHz UHF PO W ER AM PLIFIER MODULE AM PS • High Gain (Gp = 18.5dB Min.) M A X IM U M RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC DC Supply Voltage Vd d DC Supply Voltage vgg Input Power Pi Operating Case Temperature Range Tc (opr)

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use

jeita sc-62

Abstract: 2SK2854
Contextual Info: 2SK2854 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2854 ○ UHF 帯携帯電話出力段用 ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に