MT4S Search Results

PH ON 823

Abstract: MT4S101U PH ON 823 m mje 346
Contextual Info: M T 4 S 1 0 1 U SPICE2G6 model parameters NETLIST .SUBCKT MT4S101U CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LWC 1 6 LWS 4 7 CC 1 3 Ll1 7 8 Ll2 7 9 CBC 1 2 CBS 2 9 CCS 1 9 CES 3 9 Dsub 8 6 Q1 6 5 4 +AREA = .MODEL csub +IS = +N = +BV = +IBV = +CJO = +VJ =

Contextual Info: MT4S300T 東芝トランジスタシリコンゲルマニウムＮＰＮエピタキシャルプレーナ型 MT4S300T 単位: mm ○ UHF～SHF 帯 低雑音増幅用 1.2±0.05 0.9±0.05 • 高利得です。:|S21e|2=18dB 標準 (@f=2GHz) • 高静電破壊耐量:2kV 以上(HBM 法)

MT4S03AU

Contextual Info: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT4S04U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 4 S 0 4 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 13.5 dB f = 1 GHz M A Y I M I I M R A T I N E ( Ta = 5 W 1

MT4S03U

Contextual Info: T O SH IB A TENTATIVE MT4S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MTA<;n3ii V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: T O SH IB A TENTATIVE MT4S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm 2.1±0.1 FEATURES 3 1 2 0.2+0.1 –0.05 1 0~0.1 P8 0.15±0.05 4 +0.05 0.95 –0.15 Marking 3 High Gain:|S21e|2=15.0dB @f=2GHz

Contextual Info: M ICRON 128K X MT4S1288 8 SRAM MODULE 128Kx 8 SRAM SRAM MODULE FEATURES • High speed: 20*, 25 and 30ns • High-performance, low-power CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions • All inputs and outputs are TTL compatible

Contextual Info: MT4S12832 128K X 32 SRAM M OD ULE jV U G IR O N 128Kx 32 SRAM SRAM MODULE FEATURES • High speed: 15*, 20,25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions

MT4S04AU

Contextual Info: TO SH IBA MT4S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S04AU Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • 1.25 ±0.1 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 13.5 dB f = 1 GHz m a v ì m i i m R A TiM r;«; r r a

Contextual Info: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT4S101U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 2.1±0.1 FEATURES 1 7 0.2 +0.1 –0.05 4 3 0～0.1 P Type name +0.05 0.95 –0.15 2 0.15±0.05 Marking 1 High Gain:|S21e|2=16.0dB @f=2GHz

Contextual Info: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

Contextual Info: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

MT4S03A

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

MT4S06U

Contextual Info: MT4S06U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm

MT4S03

Contextual Info: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 4 3 1.2±0.05 2 0.2±0.05 High Gain:|S21e| =17.0dB @f=2GHz 1 • 2 Low Noise Figure :NF=0.72dB (@f=2GHz) 0.8±0.05 •

MT4S100U

Contextual Info: MT4S100U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 2.1±0.1 FEATURES 1.25±0.1 • Low Noise Figure :NF=0.72dB @f=2GHz · High Gain:|S21e| =16.0dB (@f=2GHz) 1 Type name +0.05 0.95 –0.15

MT4S101T

Contextual Info: MT4S101T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.8dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking

MT4S24U

Contextual Info: MT4S24U 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT4S24U 単位: mm ○ VHF~UHF 帯低雑音増幅用 • 雑音特性が優れています。: NF = 1.55dB 標準 (@f = 2 GHz) • 利得が高い。:|S21e|2 = 11.5dB(標準) (@f = 2 GHz)

MT4S24U

Abstract: MT4S 42GA
Contextual Info: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)

MT4S03A

Contextual Info: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics