23DBMW Search Results

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation

TB62752AFUG

Abstract: TA4401CT TB7001FL TOSHIBA RF Power Module
Contextual Info: TOSHIBA SEMICONDUCTOR BULLETIN EYE December 2005 VOLUME 161 CONTENTS New Products White LED Driver IC .2 SiGe Power Amplifier for 1.9GHz to 2.5GHz Wireless Applications.3

transistor marking 7D

Abstract: ED34 2SK2855 7d marking
Contextual Info: TOSHIBA 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2855 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

Contextual Info: T O SH IB A 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

2SK2854

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

TOSHIBA Semiconductor Reliability Handbook

Abstract: 2SK2855
Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use

2SK2855

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation

ITE 85111 TE

Abstract: ba3423s
Contextual Info: BA3423S BA3423S System Preamp for W Radio/Cassette Record/Play >i'l-B '+ iiH /D im e n s io n s Unit : mm BA3423S(Jv W 7 y W f f l i : I H S g L * x A 7 °U r> 7 "T T „ #8Ax 7 - f > m t ) ,B > * • ii^ t ii* W O N / O F F x (IIS ) /-V J U / +N5OU S A £ 4 '}< 7 )iffiH 1'C

2SK2854

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

TOSHIBA Semiconductor Reliability Handbook

Abstract: 2SK2854
Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

77N TOSHIBA

Abstract: 2SK2854
Contextual Info: TOSHIBA 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

RF1492

Abstract: TB1293FNG rf928 TB-129 1SV278 2SC2712 PN100 SSOP30 RF2192 MHz VCO
Contextual Info: TB1293FNG 東芝 Bi-CMOS 形リニア集積回路 シリコン モノリシック TB1293FNG デジタル衛星放送受信用ダイレクト I / Q 復調 IC TB1293FNG はデジタル衛星放送受信用の I/Q 復調 IC です。 920MHz~2200MHz の RF 信号を直接 I/Q 復調する事ができます。

2SK2855

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation

jeita sc-62

Abstract: 2SK2854
Contextual Info: 2SK2854 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2854 ○ UHF 帯携帯電話出力段用 ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に

TA4401CT

Abstract: TB62752AFUG TB7001FL TG2211AFT 06M4 TA440
Contextual Info: 東芝半導体情報誌アイ 2005年12月号 VOLUME 161 CONTENTS 新製品情報 白色LEDドライバIC .2 高周波汎用シングルコントロール

Contextual Info: T O SH IB A 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2855 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT v dss 10 ±6 1.0 0.5 150 -5 5 -1 5 0 V V A W °C °C Drain-Source Voltage Gate-Source Voltage

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA