13APR2004 Search Results

STMicroelectronics NAND256W3A

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

C4858

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

WSOP48

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

NAND01G-A

Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 . 2. TYCO ELECTRONICS CORPORATION. FOR ALL 20 PUBLICATION R 1G H T S LOC RESERVED. ALL ASSEMBLY PANEL TH DIMENSIONS C K NE S S : 6 mm ARE ONLY. ON P A G E E OR HAS N OT LTR DESCRIPTION 2. REEERENCE

Samsung k9f1208u

Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Contextual Info: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.

A92-52080

Abstract: AMP PBT-GF20 1718230-1
Contextual Info: l i i i h i r n n r n n i i SHFU- T ïït _ ¿ ¿ £ m u u y n R E L E A S E D FOR P U B L I C A T I O N F R E I FUER V E R O E F F E N T L I CHUNG rlLMIL zT UI Jl Ll i l JLI I LUTI C O P Y R I G HT 2 0 0 4 BY TYCO ELECTRONICS CORPORATION ALL ALLE 2004 ••lATED W I T H :

TYCO PBT-GF20

Abstract: AMP PBT-GF20 PBT-GF20 Tyco 108-18 PBT-GF-20 1703020
Contextual Info: TYCO ELEC TR O N IC S C O RPORATIO N. LOC 967650 CODING A Kodierung A R E V AI AS wie D I ST P LTR D E S C R I P T I ON DATE DWN APVD BESEHREIBUNG PROJEKT gezeichnet I S I O N S AENDERUNGEN NR. : NEW neue A A92-52080 D R A W ING Z e ichnung A1 NOTE A2 DRAW ING

Contextual Info: ST7FLCD1 8-bit MCU for LCD monitors with 60 KBytes Flash, 2 KBytes RAM, 2 DDC ports and infrared controller Features • 60 KBytes Flash program memory ■ In-circuit debugging and programming ■ In-application programming ■ Data RAM: up to 2 KBytes 256 bytes stack, 2

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

toshiba nand tc58

Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
Contextual Info: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for

M1000

Abstract: ICS252 M2000A M2000 M2004-01 M2006-01 M906-02 Integrated Circuit PLL
Contextual Info: APPLICATION NOTE Application Note M000-AN-002.PLLSIMREADME M000-AN-002.PLLSIMREADME SAW PLL Simulator Instructions Integrated Instructions SAW PLL Simulator Circuit Systems, Inc. Product Lines M900, M1000, M2000 M900, M1000, M2000 Product Lines INSTALLATION

OP393

Abstract: 16256S ddc/CI protocol ALI usb CSTCG24M0V51-R0 HE10 ddc2b long range fm transmitter
Contextual Info: ST7FLCD1 8-bit MCU for LCD monitors with 60 KBytes Flash, 2 KBytes RAM, 2 DDC ports and infrared controller Features • 60 KBytes Flash program memory ■ In-circuit debugging and programming ■ In-application programming ■ Data RAM: up to 2 KBytes 256 bytes stack, 2

CR10

Abstract: M58WR032EB M58WR032ET VFBGA56
Contextual Info: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

WSOP48

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

AI09

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

st nand

Abstract: FBGA63
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

NAND FLASH BGA

Abstract: nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

8051 ps2 keyboard asm program

Abstract: NEC720100 an1815 DK3200 ps2 convert a usb USB CONNECTION CIRCUIT AN1843 uPSD32 7508H 19E0H
Contextual Info: AN1886 APPLICATION NOTE Low Speed USB Design Using µPSD This application note describes the design of a low-speed USB function for the uPSD32xxA MCU series see Table 2. , and how to use the µPSD USB simple demonstration program. It gives answers to frequently asked questions, and to design issues (such as those to do with the newer USB 2.0 host controllers, see Table 1.) and gives designers the basic elements to design applications using the low-speed USB

NS4159

Abstract: 528-byte
Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • ● ■ High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage

USOP48

Abstract: NAND512-A STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 SLC ball 128 mcp IBIS Models TSOP48 outline NAND01G-A NAND128-A NAND128W3A
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

materal

Abstract: D 467
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION - ,- ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. D C .0 5 4 RECOMMENDED HOLE DIA MOUNTING PATTERN B A OBSOLETE OBSOLETE — — — — — — — — V/ZZZZ/ZZ/AM W ///Z///M W /ZZZZZ///Á VZZ/WZZZf//

TFBGA55

Abstract: NAND512-A bga 6x8 Package NAND01G-A NAND128-A NAND256-A VFBGA63
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area