16256S Search Results

Contextual Info: HICR0N TECHNOLOGY INC bOE D • b l l l S H 1! GGObbOl 43b ■ urn PRELIMINARY 256K x 16 DRAM WIDE DRAM FAST-PAGE-MODE SELF REFRESH FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 p inouts, tim ing, functions

LH61664AK-50

Abstract: LH61665AK lh61665 LH5PV8512 16256S
Contextual Info: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating

t3d01

Abstract: pin configuration of IC 1619 cp LM 3177 C16-256 MT4C16257
Contextual Info: PRELIMINARY M T 4C 16256/7/8/9 S 256K X 16 WIDE DRAM |U |I C R O N WIDE DRAM 2 5 6 K X 16 DRAM FAST-PAGE-MODE SELF REFRESH FEATURES OPTIONS P IN A S S IG N M E N T 4 0 -P in S O J T o p 4 0 -P in MARKING • Timing 70ns access -7 80ns access -8 • Write Cycle Access

Contextual Info: PRELIMINARY 256K W IDE DRAM 16 DRAM X FAST-PAGE-MODE SELF REFRESH FEATURES PIN A SSIG N M EN T Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process

Contextual Info: CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words x 16 bit organization T he LH 5P V 16256 is a 4M bit P seudo-S tatic RAM w ith a 262 ,14 4 w ords x 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)