05JAN2011 Search Results

24nm60n

Abstract: PowerFLAT 24nm6 STL24NM60N
Contextual Info: STL24NM60N N-channel 600 V, 0.200 Ω, 16 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL24NM60N 650 V < 0.215 Ω 16 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case

Contextual Info: Product Specification 108-57273 05-JAN-2011 Rev. C Wire To Board Serial, Pitch 1.25mm 1. SCOPE 1.1. CONTENTS This specification covers the performance, tests and quality requirements for the Wire To Board Serial connector. 1.2. QUALIFICATION When tests are performed on the subject product line, the procedures specified in AMP 109 series

200F

Abstract: 300F 400F SFG10
Contextual Info: SFG10SD200F ~ SFG10SD600F Voltage 200 to 600 V 10 Amp Super Fast Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies and halogen free ITO-220Y FEATURES  Fast switching for high efficiency  Low forward voltage drop

SMG2325P

Abstract: MosFET
Contextual Info: SMG2325P -3.6 A, -20 V, RDS ON 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure

TYCO PBT-GF20

Abstract: AMP PBT-GF20 PBT-GF20 Tyco 108-18 PBT-GF-20 1703020
Contextual Info: TYCO ELEC TR O N IC S C O RPORATIO N. LOC 967650 CODING A Kodierung A R E V AI AS wie D I ST P LTR D E S C R I P T I ON DATE DWN APVD BESEHREIBUNG PROJEKT gezeichnet I S I O N S AENDERUNGEN NR. : NEW neue A A92-52080 D R A W ING Z e ichnung A1 NOTE A2 DRAW ING

24nm60n

Abstract: STW24NM60 STW24NM60N STF24NM60N 24nm6 STI24NM60N 24NM60
Contextual Info: STF24NM60N, STI24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max. ID STF24NM60N 650 V < 0.19 Ω 17 A STI24NM60N 650 V < 0.19 Ω

SMG2328NE

Abstract: MosFET
Contextual Info: SMG2328NE 6.3 A, 20 V, RDS ON 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

SMG2317P

Abstract: JAN p-channel mosfet transistor low power
Contextual Info: SMG2317P -0.9 A, -30 V, RDS ON 300 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density process. Low RDS(on) assures minimal power loss

Contextual Info: SFG10SD200 ~ SFG10SD600 Voltage 200 to 600 V 10 Amp Super Fast Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220Y FEATURES  Fast switching for high efficiency  Low forward voltage drop  High current capability

TO-220Y

Abstract: SFG10
Contextual Info: SFG10S200 ~ SFG10S600 Voltage 200 to 600 V 10 Amp Super Fast Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220Y FEATURES  Fast switching for high efficiency  Low forward voltage drop  High current capability

Contextual Info: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223

Contextual Info: STL24NM60N N-channel 600 V, 0.200 Ω typ., 16 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet − production data Features 6  6  6  Order code %RWWRPYLHZ VDS @ TJmax RDS on max STL24NM60N 650 V *  ID 16 A (1) < 0.215 Ω 1. The value is rated according to Rthj-case

24NM60N

Abstract: STF24NM60N STP24NM60N to-220 equivalent
Contextual Info: STF24NM60N STP24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh II Power MOSFET TO-220 and TO-220FP Features Order codes VDSS @Tjmax RDS(on) max. STF24NM60N 650 V < 0.19 Ω 17 A STP24NM60N 650 V < 0.19 Ω 17 A ID 3 • 100% avalanche tested ■ Low input capacitance and gate charge

ST 9509

Abstract: 1NK60Z 9509 STQ1NK60ZR-AP 1nk60 Power MOSFET SOT-223 STN1NK60Z 1nk60zr A1 SOT-223 MOSFET
Contextual Info: STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes STQ1NK60ZR-AP STN1NK60Z VDSS RDS on ID 600 V < 15 Ω 0.3 A • 100% avalanche tested ■ Extremely high dv/dt capability ■

Contextual Info: STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes STQ1NK60ZR-AP STN1NK60Z VDSS RDS on ID 600 V < 15 Ω 0.3 A • 100% avalanche tested ■ Extremely high dv/dt capability ■