13MAR07 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ,- ALL RIGHTS RESERVED. LOC DIST AF 50 R E VIS IO N S P LTR B1 DESCRIPTION DATE REVISED PER E C R - 0 7 - 0 0 4 6 1 2 DWN APVD HMR GJ 13MAR07 SPECIFICATIONS: MAGNET WIRE #18 - #34 AWG,

Contextual Info: 3 THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION A L L RIGHTS 2 - LOC DIS T R E V IS IO N S AA 00 RESERVED . LTR DES C RIPTIO N C REV PER ECO—0 7 —0 0 4 6 1 7 DATE DWN APVD 13MAR07 TK JW MATERIAL: HOUSING HIGH TEMPERATURE NYLON,

CMM6003-SC

Abstract: CMM6003-SC-0G00 CMM6003-SC-0G0T PB-CMM6003-SC-0000 16550 smt
Contextual Info: 50-870 MHz High Dynamic Range Amplifier CMM6003-SC -BD March 2007 - Rev 13-Mar-07 Features Functional Block Diagram 50 to 870 MHz Frequency Range +41 dBm Output IP3 1.6 dB Noise Figure (@ 450 MHz) 17 dB Gain 22 dBm P1dB SOT-89 SMT Package Single Power Supply

Contextual Info: TCUT1200 Vishay Semiconductors Subminiature Dual-Channel Transmissive Optical Sensor with Phototransistor Outputs, RoHS Compliant, Released for Lead Pb -free Solder Process Description The TCUT1200 is a compact transmissive sensor that includes an infrared emitter and two phototransistor

revere load cell

Abstract: ph-33 499125-00
Contextual Info: Model ASC/DSC Self Aligning Set Vishay Revere ASC/DSC Self Aligning Accessories FEATURES • Capacities: 30 - 50t • Hardened components at all bearing surfaces • Self-aligning construction • Stainless steel DESCRIPTION APPLICATIONS The ASC and DSC Self Aligning Set, provides

410561

Abstract: 3919 74993 AN609 Si3973DV
Contextual Info: Si3973DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: si1988
Contextual Info: Si1988DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si3900DV
Contextual Info: Si3900DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10KHz offset:

ee13 bobbin

Abstract: HICAL 548 vishay 1N4007 DO-214AC HICAL LNK363 USB charger opto Star Sea Electronics ss14 diode TAQ2G4R7MK0811 ECK-D3A122KBN LNK363DN
Contextual Info: Design Example Report Title 2.75 W Single Output, Isolated Charger Using LNK363DN Specification 90 VAC – 264 VAC Input 5 V, 0.55 A, CVCC Output Application Cell Phone Charger Author Power Integrations Application Department Document Number DER-135 Date September 5, 2007

AN609

Abstract: Si2303BDS
Contextual Info: Si2303BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: VJ C0G NP0 Dielectric Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for Commercial Applications FEATURES • C0G is an ultra-stable dielectric offering a Temperature Coefficient of Capacitance (TCC) of 0 ± 30 ppm/°C RoHS • Low Dissipation Factor (DF)

C2204

Abstract: 74HCT14 TCPT1200 Transmissive Optical Sensor
Contextual Info: TCPT1200 Vishay Semiconductors Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead Pb -free Solder Process Description The TCPT1200 is a compact transmissive sensor that includes an infrared emitter and phototransistor

10DEC07

Abstract: 614004135023
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS Ni PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C

TN0029

Abstract: PB40
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors Tech Note TN0029 Vishay Vitramon MLCC End Termination Sn: 100% Tin Plate Matte Finish W,X,Y Or Sn/Pb Tin/Lead Plate Matte Finish with a minimum of 4 % Lead (L,Z) Pd/Ag: Palladium/Silver FIGURE 1. Termination Code: F, M

Contextual Info: WTK9431 Surface Mount P-Channel Enhancement Mode MOSFET 7 -3.5 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<130mΩ@V GS = -4.5V * RDS(ON)<180mΩ@V GS = -2.5V

6062G

Abstract: LCD T 6062G
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer

c 2437 power mosfet

Abstract: AN609 Si3475DV
Contextual Info: Si3475DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Digital Weighing Scale schematic

Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Contextual Info: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

7930

Abstract: AN609 Si3867DV
Contextual Info: Si3867DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

mosfet 4456

Abstract: 417 mosfet 109-28-4 AN609 Si3481DV 112502 33-8666
Contextual Info: Si3481DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

BY140

Abstract: 14522 weri
Contextual Info: 1 2 3 4 5 MATERIAL: HOUSING MATERIAL: LCP COLOR: IVORY ACTUATOR MATERIAL: LCP COLOR: BLACK CONTACT MATERIAL: PHOSPOR BRONZE CONTACT PLATING: 100µ TIN OVER 50µ NI QUALITY CLASS: 25 MATING CYCLES A ENVIRONNEMENTAL: OPERATING TEMPERATURE: -25°C UP TO 85°C

AN609

Abstract: Si3905DV
Contextual Info: Si3905DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

9435MSC

Abstract: 9435M
Contextual Info: WTK9435M DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V