1380C Search Results

Ericsson TSR 491 628

Abstract: NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv
Contextual Info: Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge User Manual Preliminary October 2007 80D7000_MA001_02 Titlepage Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi620, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.

1382C

Contextual Info: 380C 1380C CY7C1382C PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 250, 225, 200, 167 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns

1382C

Contextual Info: 1380C CY7C1382C 512K x 36/1M x 18 Pipelined SRAM Features Functional Description • Fast clock speed: 250, 225, 200, 167, 133 MHz • Provide high-performance 3-1-1-1 access rate • Fast OE access times: 2.6, 2.8, 3.0, 3.4, 4.2ns • Optimal for depth expansion

1380B

Abstract: 1380D 1390-B 1330C 1260B 1390B
Contextual Info: N on-ln siilated Term inals Turret H ollow Miniature Please refer to Figure 1390 D Nom L Nom .081 .079 .075 1390 OO p .079 .105 1390 .081 .079 .135 1390 .081 .079 .165 1390 B oard Thick M ounting +.003 Hole Dia 001 1390A .031 1390B .062 1390C .094 1390D .125

CY7C1380CV25

Abstract: CY7C1382CV25 1382C
Contextual Info: 380CV25 1380CV25 CY7C1382CV25 PRELIMINARY 512K x 36/1M x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 250, 225, 200, 167 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns

hep 154 silicon diode

Abstract: 600 watt smps schematic diode smd marking bfk 1500w tvs diode SMD sec 222M se 500 WATT smps 3000w smps smps 5000w WFCA-058L smps 500W
Contextual Info: THIS PAGE WAS INTENTIONALLY LEFT BLANK. TVS Diodes Table of Contents Transient Voltage Suppression Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: ~73 INTERNATIONAL RECTIFIER IO R Ì T | 4ÖSSMSS □ D D 7 1 7 CJ fi Data Sheet No. PD-2.135 in t e r n a t io n a l r e c t if ie r R23D & R23DR SERIES 1000 - 400 VOLTS RANGE 335 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS VOLTAGE

Contextual Info: 380CV25 1380CV25 CY7C1382CV25 PRELIMINARY 512K x 36/1M x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 250, 225, 200, 167 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns

DS1380

Abstract: DS1380S DS1381
Contextual Info: DS 1380 DALLAS DS1380 RAM port SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 2K x 8 static RAM • 8 -B it transparent I/O port • Battery connection provided for nonvolatility • M ultiplexed address/data bus reduces pin count • 5% or 10% V qc tolerance • Pow er Fail output signal

Contextual Info: IDT Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge  User Reference Manual June 4, 2013 Formal Status GENERAL DISCLAIMER Integrated Device Technology, Inc. "IDT" reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or

PK P6KE 200A

Abstract: hep 154 silicon diode 948 6V8A
Contextual Info: 2015 THIS PAGE WAS INTENTIONALLY LEFT BLANK. TVS Diodes Table of Contents Transient Voltage Suppression Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: 380C 1380C CY7C1382C PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 250, 225, 200, 167 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns

CY7C1382C-200BZC

Abstract: 1382C
Contextual Info: 1380C CY7C1382C PRELIMINARY 512K x 36/1M x 18 Pipelined SRAM Features • • • • • • • • • • • • • Fast clock speed: 250, 225, 200, 167, 133 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 2.6, 2.8, 3.0, 3.4, 4.2 ns