13800 Search Results

AFS8-12001800-30-20P-8

Contextual Info: -5 100 Davids Drive -10 AFS8-12001800-30-20P-8 Input Return Loss dB Hauppauge, NY 11788 Tel: (631) 436-7400 12000 13500 15000 16500 18000 MAX SPEC: MAX -15 -14.23 -18.70 -30.86 -20.99 -28.34 -13.94 -9.54 -20 -25 -30 -35 -20 13200 13800 14400 15000 15600

Contextual Info: Pin Position Grid 0.100" Clip Set Terminations Bobbin Terminations Transformers for T1 / CEPT / PCM Applications Electrical Specifications at 25OC Part Number Hi-Pot Impedance (Ω) T-13800 100 / 100 Insertion Loss max. @ 772 kHz ( dB ) 0.2 ( 1200 VRMS )

Contextual Info: S Jaganathan 2012/08/31 Dave Horchler 2013/01/03 - - ELX-V-13800-1 R Marshall 2013/01/03 Released D PDS: Rev :D STATUS:Released Printed: Jan 04, 2013 S Jaganathan 2012/08/31 Dave Horchler 2013/01/03 - - ELX-V-13800-1 R Marshall 2013/01/03 Released D PDS: Rev :D

Contextual Info: POWE R TRAN S FO R M E R CHASSIS MOUNT : TOROIDAL WORLD SERIES VPT18-13800 Electrical Specifications @25C 1. Maximum Power: 250VA 2. Input Voltage: Series: 230VAC, 50/60Hz Parallel: 115VAC, 50/60Hz 3. Output Voltage: Series: 18VAC CT @ 13.8A Parallel: 9.0VAC @ 27.60A

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM AUTHORITY REVISION RECORD DR CK 25FE88 D PART NO. WAS PE012789 & RELEASE 1380005 SM FH

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM AUTHORITY REVISION RECORD DR CK 25FE88 D PART NO. WAS PE012785 & RELEASE 1380005 SM FH

IN3091

Abstract: IN3740 stud type diodes IN3738 IN3085-92 IN3741 IN3742 A177P A177A A197PB
Contextual Info: R I C H A R D S O N / N A T I O N A L EL t.2E D • 7 7 3 4 ^ 1 7 G G 0 0 7 G C] Iñl ■ NAT SILICON DIODES IN 3735-44 IN 4044-56 250 103 250 130 275 120 300 120 3000 5000 4500 5000 5750 46000 37500 100000 84000 100000 138000 1.3 500 1.2 470 1.7 1000 1.3

Contextual Info: -5 100 Davids Drive -15 -20 -25 -30 -35 12600 13200 13800 34 17400 Gain dB 12000 12000 13000 14000 15000 16000 17000 18000 MIN SPEC: FLAT+/SPEC+/- 30 32.44 32.36 31.93 31.45 31.27 31.58 31.67 31.27 28.00 0.61 1.00 29 27 2.0:1/2.0:1, max 26 IIP3 1.8 +21 dBm, typ

Contextual Info: RADI ALL Microwave components TECHNICAL DATA SHEET DC-1 2 .4GHz 2 W R 4 1380011 COAXIAL ATTENUATOR SMA issue 28.jul.93 Page 1/1 DRAWING 22.35 max General tolerances: +/- 0.5 mm R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE ATTENUATION - NOMINAL 1 a. 1 DC - 12.4 GHz

Contextual Info: Doc No. TT4-EA-13800 Revision. 3 Product Standards Zener Diode DZ2443000L DZ2443000L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit Capability of withstanding a high surge type DZ2W430 in Power type package 2.4 0.15

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE DO NOT S C A L E SYM AUTHORITY DR CK 25FE88 D PART NO. WAS PE012786 & RELEASE 1380005 SM

Contextual Info: -5 100 Davids Drive -10 AFS4-12001800-18-10P-4 Input Return Loss dB Hauppauge, NY 11788 Tel: (631) 436-7400 12000 13500 15000 16500 18000 MAX SPEC: MAX -15 -13.64 -12.52 -12.90 -14.31 -12.28 -12.12 -9.54 -20 -25 -30 -35 -20 12600 13200 13800 34 ±1.50 dB, max

Contextual Info: -5 AFS4-12001800-16-13P-4 Input Return Loss dB Tel: (631) 436-7400 -10 Specifications at +23 °C MAX -15 -20 -25 -30 -10 -20 -30 -40 -70 -45 -90 -50 -100 13200 13800 12.0 to 18.0 GHz 15600 15000 14400 Frequency (MHz) 16200 16800 17400 28 dB, min 34 Gain Flatness

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ ST IT U T E S A PROPRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. DATE SYM AUTHORITY REVISION RECORD DR CK 25FE88 D PART NO. WAS PE012787 & RELEASE 1380005 SM FH

S5 100 B112 MT RELAY

Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

AT49BV320D

Abstract: AT49BV320DT SA70 AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

Lodtrak III

Abstract: Lodtrak IV PGC5000 MANUAL multilin 169 multilin 369 WESTINGHOUSE motor life line multilin 269 Neutral grounding resistor DC UNGROUNDED EARTH FAULT detector circuit using delta plc cable pin diagram RS-232
Contextual Info: Littelfuse POWR-GARD products and services enhance the productivity and safety of electrical systems. Along with protection relays, POWR-GARD® offers current-limiting fuses to decrease Arc-Flash exposure, fuseholders and fusecovers to reduce incidental contact, and Electrical Safety Services and

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this