135NS Search Results

D10F150S

Contextual Info: POWER RECTIFIER SDS10F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1.3V at lF=10A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded

IXXH50N60B3D1

Contextual Info: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

D06F150S

Abstract: Effio APAA aval high power rectifier diode single SDS06F150S marking diode 6a
Contextual Info: POWER RECTIFIER SDS06F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits M ECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded

D06F150S

Abstract: SDS06F150S
Contextual Info: SDS06F150S POWER RECTIFIER TO-220F FEATURES * High Voltage and High Reliability * High Speed Switching Trr=135ns * Low VF in Turn on (VF=1.3V at IF=6A) * Suitable for Damper Diode in Horizontal Deflection Circuits 1 2 MECHANICAL CHARACTERISTICS * Case: Epoxi, Molded

D10F1

Abstract: D10F150S
Contextual Info: POWER RECTIFIER SDS10F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at IF= 10A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded

D06F150S

Abstract: d06f
Contextual Info: POWER RECTIFIER SDS06F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded

TDC1009

Abstract: tmc2009j3v 2009J3C TMC2009 TMC2009C1V TMC2009J3C 2009j3
Contextual Info: TMC2009 C M O S Multiplier-Accumulator 12x12 Bit, 135ns The T M C 2 0 0 9 is a high-speed 1 2 x 1 2 bit parallel m ultiplier-accum ulator w h ic h operates at a 135ns cycle tim e 7.4M H z multiply-accum ulate rate . The input data Features • Low Pow er Consumption C M O S Process

IXXH50N60B3D1

Contextual Info: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Information KM23V128000TY CMOS MASK ROM 128M-Bit 16Mx8 /8Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 16,777,216 x 8(byte mode) 8,388,608 x 16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 135ns(Max.)

dtv56f

Abstract: DTV56 DTV56B ITO-220 VFP10
Contextual Info: DTV56, DTV56F, DTV56B Vishay Semiconductors New Product formerly General Semiconductor High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 135ns ITO-220AC DTV56F 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72)

single phase full controlled rectifier component list

Abstract: D10F150S D10F1 SDS10F150S
Contextual Info: SDS10F150S POWER RECTIFIER FEATURES TO-220F * High Voltage and High Reliability * High Speed Switching Trr=135ns * Low VF in Turn on (VF=1.3V at IF=10A) * Suitable for Damper Diode in Horizontal Deflection Circuits 1 2 MECHANICAL CHARACTERISTICS * Case: Epoxi, Molded

D06F150S

Abstract: marking 3FW
Contextual Info: POWER RECTIFIER SDS06F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded

IXXH50N60B3D1

Abstract: 50N60B3D1 18A100
Contextual Info: Advance Technical Information IXXH50N60B3D1 XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: TMC2009 T R Y C M O S Multiplier-Accumulator F e a tu r e s 1 2 x 1 2 • Low Power Consum ption CMOS Process B it, 1 3 5 n s The T M C 2 0 0 9 is a high-speed 1 2 x 1 2 bit parallel m ultiplier-accum ulator w h ich operates at a 135ns cycle tim e 7.4M Hz m ultiply-accum ulate rate . The input data

135NSF

Contextual Info: 135NSF R Naina Semiconductor Ltd. Fast Recovery Diodes, 135A Features • • • • • Diffused Series Industrial grade Excellent surge capabilities Available in Normal and Reverse polarity Optional Avalanche Characteristic Electrical Specifications (TA = 250C, unless otherwise noted)

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TPS54340 SLVSBK0B – OCTOBER 2012 – REVISED MARCH 2014 TPS54340 42 V Input, 3.5 A, Step Down DC-DC Converter with Eco-mode 1 Features 3 Description • • The TPS54340 is a 42 V, 3.5 A, step down regulator

Contextual Info: LAN9217 16-bit High-Performance Single-Chip 10/100 Ethernet Controller with HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ „ Target Applications „ „ „ „ „ „ „ „ Video distribution systems, multi-room PVR Cable, satellite, and IP set-top boxes

Contextual Info: LAN9218i High-Performance Single-Chip 10/100 Ethernet Controller with HP Auto-MDIX and Industrial Temperature Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ „ Target Applications „ „ „ „ „ „ „ „ Video distribution systems, multi-room PVR

max 8770

Abstract: 256R 5962-9096601MRA ADC0802 ADC0802L INS8080A LC0001D NSC800
Contextual Info: MILITARY DATA SHEET Original Creation Date: 08/24/95 Last Update Date: 09/18/95 Last Major Revision Date: 08/24/95 MNADC0802L-X REV 0A0 8-BIT uP COMPATIBLE A/D CONVERTER General Description The ADC0802, is a CMOS 8-bit successive approximation A/D converter that uses a

TC511632

Abstract: TC511632FL
Contextual Info: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high

Contextual Info: CM300DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD H-Series Module 300 Amperes/1200 Volts A B P - DIA. (4 TYP.) C2E1 C1 R L F C1 E1 C E2 E2 C2 M G G K E N K K R H S - M6 THD. (3 TYP) N D .110 TAB

ideall crystal oscillator in microcontroller

Contextual Info: DE | 25Mb324 DDDDSbl 1 • ~D0561 CRYSTAL SEM IC ON DU CT OR DI , i r — bm*b& I'rir tm m m a m sra m D CSZ5116 tm m àm& m mm m r , Semiconductor Corporation 16-Bit 50kHz Sampling A/D Converter Features General Description • . • Monolithic CMOS A/D Converter

Contextual Info: I CRYSTAL SEMIC ON DU CT OR DI DEBESMbBEM □000SG3 ^ C SZ 5112 Semiconductor Corporation T - ^ / ~ /O " / 2 - 12-Bit, 100kHz Sam pling A /D C o n v e rte r Features General Description The CSZ5112 CMOS analog-to-dlgltal converter is an ideal front end for single- or multi-channel digital signal