134 T31 Search Results

KL SN 102 94v

Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a

AVANTEK transistor

Contextual Info: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA

"Philips Semiconductors" DO-35

Contextual Info: bSE » • 711002h DDbaElR T31 ■ P H I N Philips Preliminary specification Silicon bi-directional trigger device 1 PHILIPS INTERNATIONAL DESCRIPTION BR100/05 ^ ^ ^ ■ QUICK REFER EN CE DATA Silicon bi-directional trigger device

Contextual Info: Philips Semiconductors b tS S *!? ! 0032314 T31 M APX Product specification CATV amplifier module BGD108 N amER PHILIPS/DISCRETE FEATURES PINNING - SOT115C • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common

amplifier 446 mhz

Abstract: BGD108
Contextual Info: Philips Semiconductors b tiS S * !? ! 0032314 T31 M APX Product specification BGD108 CATV amplifier module N A^ER P H I L I P S / D I S C R E T E PINNING -SOT115C FEATURES • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction

Rf Detectors

Abstract: tSA401 BA481 noise diode mixer diode KMW450 BB533
Contextual Info: N AMER PHILIPS/DISCRETE b*ÌE D m b b S 3 T31 DDEblb? 07 S BiAPX BA4Ö 1 A U.H.F. MIXER DIODE S ilico n epitaxial S c h o ttk y -b a rrie r diode in a DO -34 envelope and intended fo r m ixe r applica tio n s in u .h .f. tuners, t.v. m odulators and r.f. detectors.

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

AIT330S

Abstract: PRS64G SA-12E CMOS-6SF
Contextual Info: â IBM Packet Routing Switch PRS64G Datasheet â 0.1 Copyright and Disclaimer  Copyright International Business Machines Corporation 2000. All Rights Reserved Printed in the United States of America August 2000 The following are trademarks of International Business Machines Corporation in the United States, or other countries,

32khz crystal oscillator

Contextual Info: Section 13 H8/3814 Series Electrical Characteristics 13.1 H8/3814 Series Absolute Maximum Ratings Table 13-1 lists the absolute maximum ratings. Table 13-1 Absolute Maximum Ratings Item Symbol Value Unit Power supply voltage Vcc -0 .3 to +7.0 V Analog power supply voltage

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

Contextual Info: PBYR2535CT PBYR2540CT PBYR2545CT B S E D B tjbS 3 T31 0033^77 S B N AMER PHILIPS/DISCRETE SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES 7^ <33-/9 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in switched-mode

BFU309

Contextual Info: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections

T120 Switch

Abstract: BUK457-450B T0220AB FBR1
Contextual Info: N AMER PHILIPS/DISCRETE m S5 E D bia5 3 T31 0 0 E0 5 S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

HP900

Abstract: NAT-1 3M S11A jl6g MAN1A STRM-50 ZHL-4240 NP300 mav-3sm BLP-10.7
Contextual Info: Model Index • D ot indicate s surface m o u rt models. mixers • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •

marking t17

Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Contextual Info: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3

Contextual Info: AVANTEK INC EOE D AVANTEK • lim u h AT-60510 Up to 6 GHz Low Noise . Silicon Bipolar Transistor • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz 7.5 dB typical at 4.0 GHz

DZ89-C91

Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Contextual Info: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £

T612M-DS

Abstract: brake fluid sae 1703 AS81531 T612M-DS-PRINTER TTDS-019 T408M-PRINTER Mil-Std-202F 215j sae J SAE J 1703
Contextual Info: www.tycoident.com Document number: TTDS-019 Issue: 3 Date: April 2004 TECHNICAL DATA SHEET RPS heat-shrinkable sleeves MATERIAL DESCRIPTION: Thin wall, flame retarded radiation cross-linked polyolefin heat-shrinkable tubing, assembled as organized cut sleeves in a “ladder” configuration. 3:1

transistor f423

Abstract: F423 Philips F423 F423 transistor BF423 philips BF423 BF420 BF421 BF422 F-423
Contextual Info: BF421 _ i V _ P HILI P S I N T E R N A T I O N A L 5bE D • ¿ F423 7 1 1 0 0 2 b 0 0 4 21 b 2 42S « P H I N SILICON EPITAXIAL TRANSISTORS T -J /-2 3 P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in

transistor SOT103 mosfet

Abstract: BF902
Contextual Info: PHILIPS INTERNATIONAL 41E D 7 1 1D f l 2 b GQEbô' IS IPHIN T-31-25 Philips Sem iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES BF902 QUICK REFERENCE DATA • Short channel transistor with high ratio IY,3I:CI3 • Low noise gain-controlled

SOT103

Abstract: transistor SOT103 mosfet BF902 marking C1s philips mosfet
Contextual Info: P H ILIP S INTER NATIONAL 41E D B 7110â2b OQEtfl'ÎS T « ¡P H IN T-31-25 Philips S em iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES • • BF902 QUICK REFERENCE DATA Short channel transistor with high ratio IYtsl:Cls

capacitor 400 MKT philips

Abstract: capacitor MKT Philips BLF378 MCA976 capacitor 250 mkt philips 2222371-11105 BR 78L05 PHILIPS MKT CAPACITOR 78L05 C4C31
Contextual Info: Philips Semiconductors bbS3 T31 GD3 0 Ü7 S 715 APX Product specification VHF push-pull power MOS transistor BLF378 N AMER PHILIPS/DISCRETE blE T> — PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

B41 diode smd

Abstract: smd diode marking 2H smd diode M4 smd diode a7 2bcj smd diode code A7 smd marking m4 BAV99W DIODE smd marking M4 DIODE smd marking A7
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 OOSb'ni Philips Semiconductors b41 * A P X Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV99W QUICK REFERENCE DATA

AVANTEK transistor

Abstract: ATF-13136-TR1
Contextual Info: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB