1333MB Search Results

Contextual Info: KVR1333D3S4R9S/2GEF FEATURES: 2GB 1Rx4 256M x 72-Bit DDR3-1333 Registered w/ Parity CL9 240-Pin DIMM • • • • • • • DRAM SUPPORTED: Elpida F-Die • • • JEDEC standard 1.5V ± 0.075V Power Supply VDDQ = 1.5V ± 0.075V 667MHz fCK for 1333Mb/sec/pin

FBGA DDR3 x32

Abstract: "DDR3 SDRAM" DDR3 SDRAM 78 ball fbga ddr3 specification DDR3 architecture ELPIDA DDR3 1066 Single Data Rate SDRAM Memory Controller with 512MB DDr3 part number
Contextual Info: DDR3 SDRAM Feature Comparison of DDR3, DDR2, and DDR SDRAM Items DDR3 SDRAM DDR2 SDRAM DDR SDRAM Clock frequency 533/667MHz 200/266/333/400MHz 100/133/166/200MHz Transfer data rate 1066/1333Mbps 400/533/667/800Mbps 200/266/333/400Mbps I/O width x4/x8/x16 x4/x8/x16

Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

NT1GC72B89A0NF

Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: UG64U6400L8DU Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR3 SDRAM Unbuffered DIMM based on 8 pcs 64M x 8 DDR3 SDRAM 8K Refresh FEATURES SPECIFICATIONS • Density: 512MB

96-ball FBGA

Contextual Info: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)

L9D3256M32SBG1

Contextual Info: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999

L1333

Abstract: ARM v7
Contextual Info: 300 series Marvell ARMADA 370 System-on-Chip SoC Family of Integrated Controllers PRODUCT OVERVIEW The Marvell ARMADA 370 is a highly integrated and high-performance ARM V7-based system-on-chip (SoC) suited for a variety of home and enterprise applications. With its on-chip floating point engine, 256K L2 cache, and multiple

TA 7698 AP

Contextual Info: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:

Contextual Info: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4B4G0846C

Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Contextual Info: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Memory Module Specifications KVR1333D3E9SK2/4GI 4GB 2GB 256M x 72-Bit x 2 pcs. PC3-10600 CL9 ECC 240-Pin DIMM Kit DESCRIPTION ValueRAM’s KVR1333D3E9SK2/4GI is a kit of two 256M x 72-bit 2GB (2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC memory modules, Intel

2gb ddr3

Abstract: ddr3-1333 2gb pc3-10600 DDR3 DIMM SPD DDR3-1333 DDR3 DIMM SPD JEDEC kvr1333d3n9 2rx8 DDR3 1333 2Rx8
Contextual Info: Memory Module Specifications KVR1333D3N9/2G 2GB 2Rx8 256M x 64-Bit PC3-10600 CL9 240-Pin DIMM Important Information: The module defined in this data sheet is one of several configurations available under this part number. While all configurations are compatible, the DRAM combination and/or the module height may

Contextual Info: Memory Module Specifications KHX1600C9D3K4/16GX 16GB 4GB 512M x 64-Bit x 4 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

Contextual Info: Memory Module Specifications KHX1600C9D3K6/12GX 12GB 2GB 256M x 64-Bit x 6 pcs. DDR3-1600MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)

72-BIT

Abstract: DDR3 DIMM SPD JEDEC KVR1333
Contextual Info: Memory Module Specifications KVR1333D3D8R9S/2GHT 2GB 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 72-bit 2GB DRAM Supported: Hynix T-Die SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin)

KVR1333D3E9S

Abstract: 1333Mb
Contextual Info: Memory Module Specifications KVR1333D3E9S/2GI 2GB 256M x 72-Bit PC3-10600 CL9 ECC 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 72-bit 2GB SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh

Contextual Info: Memory Module Specification KVR1333D3E9SK3/6G 6GB 2GB 256M x 72-Bit x 3 pcs. PC3-10600 Triple-Channel CL9 ECC 240-Pin DIMM Kit DESCRIPTION: ValueRAM's KVR1333D3E9SK3/6G is a kit of three 256M x 72-bit 2GB (2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC triple-channel memory modules, based on eighteen 128M x 8-bit DDR3-1333 FBGA

Contextual Info: Memory Module Specifications KHX1600C7D3K3/6GX 6GB 2GB 256M x 64-Bit x 3 pcs. DDR3-1600MHz CL7 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)

ddr3

Abstract: DDR3 DIMM SPD JEDEC DDR3 SPD
Contextual Info: T E C H N O L O G Y Memory Module Specification KHX1333C7D3/1G 1GB 128M x 64-Bit DDR3-1333MHz CL7 240-Pin DIMM DESCRIPTION: This document describes Kingston's 128M x 64-bit 1GB 1024MB DDR3-1333MHz CL7 SDRAM (Synchronous DRAM) memory module, based on eight 128M x 8-bit DDR3 FBGA components. This module has been tested to run

K4B4G0846B-HYK0

Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Contextual Info: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed