13003 TO 92 PACKAGE Search Results

L5980

Abstract: sw 13003 REGULATOR sw 13003 SR 13003 SR 13003 b 13003 13003 MOSFET 13003 MOSFET transistor SR 13003 K REGULATOR 13003
Contextual Info: L5980 0.7 A step-down switching regulator Features • 0.7 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100% duty cycle

REGULATOR sw 13003

Abstract: sw 13003 A MOSFET 13003 voltage REGULATOR 13003 SW 13003 SR 13003 W 13003 SR 13003 K REGULATOR 13003 SW 13003 A
Contextual Info: L5980 0.7 A step-down switching regulator Features • 0.7 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100% duty cycle

sw 13003

Abstract: SR 13003 REGULATOR sw 13003 13003 MOSFET SR 13003 b SR 13003 D SR 13003 K sw 13003 MOSFET REGULATOR 13003 sw 13003 A MOSFET
Contextual Info: L5980 0.7 A step-down switching regulator Features • 0.7 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100% duty cycle

pc 13003

Abstract: 13003 TO 92 PACKAGE KSB13003A
Contextual Info: KSB130 003A KSB13003A ◎ SEMIHOW REV.A1,Oct 2007 KSB130 003A KSB13003A High g Voltage g Switch Mode Application pp • High Speed Switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO

H13003

Abstract: H 13003 PC 13003 TRANSISTOR TRANSISTOR 13003 transistor 11 ksb130 13003 TRANSISTOR PC 13003 TRANSISTOR application
Contextual Info: KSB130 003H KSB13003H ◎ SEMIHOW REV.A0,Oct 2007 KSB130 003H KSB13003H High g Voltage g Switch Mode Application pp • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING

PC 13003 TRANSISTOR

Abstract: electronic ballast 13003 KSB13003HR NPN power transistor 15A amperes 13003 TO 92 PACKAGE 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn g 13003 PC 13003 TRANSISTOR application hr/13003 TRANSISTOR npn
Contextual Info: KSB130 003HR KSB13003HR ◎ SEMIHOW REV.A0,Oct 2007 KSB130 003HR KSB13003HR High g Voltage g Switch Mode Application pp • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL

electronic ballast 13003

Abstract: 13003 TRANSISTOR TI 13003 TO-92 KSB13003AR ar 13003 13003 TRANSISTOR PC 13003 TRANSISTOR PC 13003 TRANSISTOR PC 13003 TRANSISTOR application
Contextual Info: KSB130 003AR KSB13003AR ◎ SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W Max Operating temperature • 150℃ Max. • 8KV ESD proof at HBM C=100㎊, R=1.5㏀

PC 13003 TRANSISTOR

Abstract: PC 13003 transistor 13003 c s 13003 TRANSISTOR h
Contextual Info: KSB130 003ER KSB13003ER ◎ SEMIHOW REV.A0,Apr 2008 KSB130 003ER KSB13003ER High Voltage Switch Mode Application • High Voltage, High Speed Switching • Suitable for Switching regulator, Inverters motor controls Max Operating temperature • 150℃ Max.

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715

BUV93

Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Contextual Info: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

Contextual Info: CD42_ _60 CD47_ _60 _ Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 60 Amperes/1600 Volts Description: CD42_ _60, CD47_ _60 SCR/Diode POW-R-BLOK™ Module 60 Amperes/1600 Volts Outline Drawing

transistor EN 13003 A

Abstract: transistor SR 13001 ups transformer winding formula transistor EN 13003 400 KVAR, 480 VAC, 3 phase Capacitor Bank 13003 TO 92 PACKAGE SR 13003 kvar wiring esta power factor controller harmonics in oil filled transformer
Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book power factor correction capacitors low voltage vishay ESTA vsD-db0052-0904 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: White Electronic Designs W3EG7264S-D3 PRELIMINARY* 512MB- 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: W3EG7264S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 512MB- 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: White Electronic Designs W3EG7264S-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

DDR200

Abstract: DDR266 DDR333 DDR400 42704
Contextual Info: White Electronic Designs W3EG7264S-JD3-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

reset samsung 1665

Abstract: DDR200 DDR266 DDR333 DDR400 13003 TO 92 PACKAGE
Contextual Info: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: White Electronic Designs W3EG6432S-D3 PRELIMINARY* 256MB- 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR

Contextual Info: White Electronic Designs W3EG6432S-D3 PRELIMINARY* 256MB- 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR

Contextual Info: WED3EG6432S-D3 White Electronic Designs ADVANCED* 256MB- 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION  Double-data-rate architecture The WED3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR

A84 marking code

Abstract: AXH marking AXH 2510
Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book LOW VOLTAGE POWER CAPACITORS ViShAy ESTA Notes: 1. To navigate: a Click on the Vishay logo in any document to go to the overview page. b) Click on the document name within the overview to go directly to the

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I