13001 T 5 Search Results

HA13001

Abstract: HA13001 amplifier HA-13001 SRUT 5.5w HA13001 hitachi
Contextual Info: H A 13001 5.5W Dual/17.5W B T L Audio P o w er Am plifier •t t S o i t t ♦ n . 4 « ¿ ^ h 11 . o f t ' # * * " r * » t W t A M ?» 1 1 , O f lif c ie m t - C T .U O k H i. 0 .5 W u t 0.2294 typ • B T L T > T * LT«!HILfc«kä O A S O « J * 0 |M t* * > T . O C L T f U f f l T è J t .

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V C256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

13001 LZ

Abstract: SR 13001 PA 13001
Contextual Info: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh

13001 TRANSISTOR

Abstract: c s x 13001 H 06 transistor x 13001 transistor c s x 13001 13001 TO-92 13001 npn transistor TO-92 13001 transistors 13001 transistor 13001 13001 transistor 400v
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage

13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 transistor 13001 TO 92 13001 transistor 400v c s x 13001 H 06 transistors 13001 all transistor 13001 NPN transistor 13001 transistor s 13001
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage

13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 13001 transistor 400v c s x 13001 H 06 13001 npn transistors 13001 transistor s 13001 13001 transistor c s x 13001
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

54-794-002-102P

Abstract: 54-713-001-102Z
Contextual Info: M etuchen Gflfl “We Offer Quick Solutions to Noise Pollution” I -800-679-0516 • Ti e — I -800-679-9959/FajT^ www.metcaps.cbm F e e d -T h ru C e ra m ic C a p a c it o r s W o r ir in t V o lt a g e + 8 5 °C - : + I2 S * C : 200 W V D C I00 W V D C

free circuit diagram for 13001

Abstract: CS 13001
Contextual Info: CAT130xx Voltage Supervisor with Microwire Serial CMOS EEPROM Description http://onsemi.com The CAT130xx see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a system power supervisor with brown−out

Contextual Info: 10 © 1— rr < X o Ld LU l/> 1- MATERIAL: - HOUSING: POLYAMIDE 46 FIBER GLASS FILLE D - TERMINAL: PHOSPHOR BRONZE PLA TE D c5 o UL 9 4 -V 0 , COLOR BLACK. WITH: 0 . 0 0 127/.000050 MIN GOLD IN CONTACT AREA, 0 . 0 0 190/.000075 MIN T IN /LE A D IN TA IL AREA, BOTH OVER 0 . 0 0 127/.000050

A44E

Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
Contextual Info: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000

transistor D 13001

Abstract: transistor x 13001 transistor s 13001 eb 13001 transistor bc617
Contextual Info: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 00E75fifl 31D b'lE » APX 13001/ BC618 NPN D A R LIN G TO N TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. They can be used for general purpose low frequency applications and as relay drivers etc.

Semikron SKB b 80

Abstract: Semikron SKB b 500 Semikron SKB b 80 c3200 Semikron SKB C3200/2200 Semikron SKB b 500 c 3200 2200 Semikron SKB b 250 Semikron SKB b 40 Semikron SKB b 250 c 3200 2200 C5000/3300 Semikron SKB C3200/Semikron SKB b 250
Contextual Info: 013bb71 S1E » 0003^77 SEMIKRDN SEMIKRON INC Id Tamb = 45 °C 'V r s m VvRMS 4A ¡V r r m V 100 200 300 400 600 800 90 0' 12001 40 80 125 125 250 250 380 500 V(BR) 'VvRMS V ’ V 13001 500 |iF SKB SKB SKB SKB 1,6 10000 2 . 3 - 0 5 B 250 C5000/3300 2500' 0,8

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

a44e

Abstract: C101E A12E A15E C77E A33E A22E C202E C204E C22E
Contextual Info: I 'E' Finish Resin E ncapsulated I T em perature R ange — 55°C to + 100°C Type Capacitance pF Capacitor Tolerance ±% Il X b X d (max) mm a mm 50 VO LT W O R K IN G C5E C6E C12E A 12E C14E A 15E A 25E C101E C201E C202E C203E C204E A 33E C33E C35E 271

lv4137

Abstract: LV4135W LV4137W 67723 13001 s lv4135 LV4139W ALP239CXX
Contextual Info: Ordering number : ENN6772 LCD Module ALP239CXX Low-Temperature Polysilicon 2.0-inch TFT LCD Module Overview This 2 inch low temperature poly- silicon TFT-LCD module is suitable for digital still camera or for digital video camera. Features • Diagonal 5.1cm 2.0inch display size.

A44E

Abstract: C22F C55F cs5f C202F C14F C11F C12F C201F C203F
Contextual Info: TECHNICA L IN FO R M A TIO N Tempera^ uiire Coefficients Type Capacitance pF C54E C77E 33000 - 50000 50000 - 10OOCO Capacitor Tolerance ± c 500 V O LT W O R K IN G 5-2-I-0.5 5-2-1-0.5 I X b X d max mm a mm 31.7 X 25.4 X 10.2 4 4 .2 x 3 2 .8 x 8 .5 25.4

transistor 13002

Abstract: PA 13001 13002 transistors 13001 MIL-T-10727 QQN-290
Contextual Info: Series 800 Vertisockets Vertical Mounting with Bifurcated Contacts FEATURES: • Aries offers a full line of VertisocketsTM for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc. The variations of mounting position and pin configuration provide exceptional design freedom.

D 13009 K

Abstract: 13006D P10531
Contextual Info: Switchcraft Page 1 of 4 Previous Page | Return to Index | Next Page LEVER SWITCHES LEV-R SWITCH SERIES 3000, 13000 1. Series 3000 2. Series 13000 click here to download a schematic drawing you will need to have Adobe Acrobat installed on your system to do this

transistor 13001

Abstract: transistor 13002 MIL-T-10727
Contextual Info: Series 800 Vertisockets Horizontal Mounting with Bifurcated Contacts FEATURES: • Aries offers a full line of VertisocketsTM for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc. The variations of mounting position and pin configuration provide exceptional design freedom.

Contextual Info: ±1% Tolerance 0402 to 1206 Chip Resistors O rd er N u m b er S ystem 61 - Specifications - 3 - XXX Type 61 = miniReel 41 = miniBag Size Code 2 = 0402 3 = 0603 5 = 0805 6= 1206 |w | • I Code <fl See Chart Dimensions L x W): Size Inch mm l x W L x W 0402 .04" x .02” 1.0 x 0.5

TA-3061

Contextual Info: Ordering number : ENN6864 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2167 [MCH3410] 0 .1 5 , 1 : Gate 2 : Source 3 : Drain

jk 13001 E

Abstract: jk 13001 TA 68634 th 2167 jk 13001 h
Contextual Info: Ordering number : ENN6863 P-Channel Silicon MOSFET MCH3310 ISAfiYOl Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm 2167 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [MCH3310] 0 .1 5 . 0 .3 _ 311 o ïïtr -

MILL MAX HYDRAULIC OIL 32

Contextual Info: #SH721 Viton Heat Shrink Tubing AMS-DTL-23053/13 (MIL-DTL23053/13 2:1 Shrink Ratio, Fluoroelastomer Tubing Flexible High Temperature Chemical an d Abrasion Resistant Applications Daburn SH721 is a heat shrinkable, flexible, fluoroelastomer sleeving that is used in high

SSP7404NA

Abstract: MosFET
Contextual Info: SSP7404NA 35A, 30V, RDS ON 2.8 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.