13000 BR TRANSISTOR Search Results

13000 BR transistor

Abstract: 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-61 B-61 01/99 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating

mje 3007

Contextual Info: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)

transistor bf 760

Abstract: MCH4008 945 npn
Contextual Info: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

MCH4008

Abstract: TB 2920
Contextual Info: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

sanyo eg 8500

Abstract: transistor 9747 MCH4009
Contextual Info: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

sanyo eg 8500

Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
Contextual Info: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

Contextual Info: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

mje 3007

Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

2n5485 equivalent transistor

Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416
Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation

022N04L

Abstract: SMD diode D95 sth25
Contextual Info: Type IPB022N04L G !"#$%!& 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mW ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

Contextual Info: Type IPB022N04L G  3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mW ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

035N06L

Abstract: IPD035N06L3 JESD22 IPD035N06L3 G IPD035N06 035N06
Contextual Info: IPD035N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 3.5 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)

4N06L04

Abstract: IPI90N06S4L-04 DIODE smd marking Ag IPB90N06S4L-04 IPP90N06S4L-04 PG-TO263-3-2 t 04 27 smd c2804
Contextual Info: IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 3.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow

4N06

Abstract: IPD90N06S4L-03 PG-TO252-3-11 f90a 4N06L03 C2804
Contextual Info: IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 3.5 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

STE40NA60

Contextual Info: STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STE40NA60 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.135 Ω 40 A TYPICAL RDS(on) = 0.12 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER

031N06L

Abstract: IPD031N06L3 JESD22 IPD031N06L3 G
Contextual Info: IPD031N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)

E40NA60

Abstract: schematic diagram UPS STE40NA60 Ultrasonic welding circuit diagram
Contextual Info: STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E40NA60 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.135 Ω 40 A TYPICAL RDS(on) = 0.12 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E S TE40N A60 . . . . . . . . . V dss R dS(oii) Id 600 V < 0.135 Q. 40 A TYPICAL RDs(on) =0.12 £2 HIGH CURRENT POWER MODULE

022N04L

Abstract: IEC61249-2-21 JESD22 IPB022N04L SMD diode D95
Contextual Info: Type IPB022N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

032N06n

Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
Contextual Info: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)

SMD diode D95

Abstract: JESD22 8v32
Contextual Info: Type IPB022N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

032N06n

Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
Contextual Info: IPB029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)