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    035N06 Search Results

    035N06 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMTC035N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 180A N-channel enhancement mode power MOSFET in TO-220C package with RDS(on) less than 4.3 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. Original PDF
    badge JMTE035N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 180A N-channel enhancement mode Power MOSFET in TO-263-3L package with RDS(on) less than 3.8 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency power management applications. Original PDF
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    035N06 Price and Stock

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    ROHM Semiconductor RSQ035N06HZGTR

    MOSFET N-CH 60V 3.5A TSMT6
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    DigiKey () RSQ035N06HZGTR Cut Tape 8,392 1
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    RSQ035N06HZGTR Digi-Reel 8,392 1
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    Mouser Electronics RSQ035N06HZGTR 8,438
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    Newark RSQ035N06HZGTR Cut Tape 1
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    Ameya Holding Limited RSQ035N06HZGTR 50 1
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    Chip One Stop RSQ035N06HZGTR Cut Tape 2,320 0 Weeks, 1 Days 1
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    IBS Electronics RSQ035N06HZGTR 1
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    onsemi FDPF035N06B-F154

    MOSFET N-CH 60V 88A TO220F
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    DigiKey FDPF035N06B-F154 Tube 985 1
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    Avnet Americas FDPF035N06B-F154 Tube 22 Weeks 1,000
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    Mouser Electronics FDPF035N06B-F154 490
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    Newark FDPF035N06B-F154 Bulk 1,000
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    Rochester Electronics FDPF035N06B-F154 6,000 1
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    Richardson RFPD FDPF035N06B-F154 1,000
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    EBV Elektronik FDPF035N06B-F154 24 Weeks 1,000
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    Goford Semiconductor GT035N06T

    N-CH, 60V,170A, RD(MAX)<3.5M@10V
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    DigiKey GT035N06T Tube 96 1
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    Diotec Semiconductor AG DI035N06PQ2

    MOSFET 2N-CH 60V 35A 8TDSON
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    DigiKey DI035N06PQ2 Bulk 5,000
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    Mouser Electronics DI035N06PQ2
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    Rochester Electronics LLC FDPF035N06B

    88A, 60V, 0.0035OHM, N CHANNEL ,
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    DigiKey FDPF035N06B Bulk 166
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    035N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    035N06L

    Abstract: IPD035N06L3 JESD22 IPD035N06L3 G IPD035N06 035N06
    Contextual Info: 035N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 3.5 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPD035N06L3 PG-TO-252-3 035N06L 035N06L JESD22 IPD035N06L3 G IPD035N06 035N06 PDF

    035N06P

    Abstract: 035N06
    Contextual Info: SEMICONDUCTOR 035N06P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		KU035N06P Fig14. Fig15. Fig16. 035N06P 035N06 PDF