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    035N06 Search Results

    035N06 Datasheets (2)

    Jiangsu JieJie Microelectronics Co Ltd
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMTC035N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 180A N-channel enhancement mode power MOSFET in TO-220C package with RDS(on) less than 4.3 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. Original PDF
    badge JMTE035N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 180A N-channel enhancement mode Power MOSFET in TO-263-3L package with RDS(on) less than 3.8 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency power management applications. Original PDF
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    035N06 Price and Stock

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    Rochester Electronics LLC FDPF035N06B

    88A, 60V, 0.0035OHM, N CHANNEL ,
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    DigiKey FDPF035N06B Bulk 177,137 166
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    ROHM Semiconductor RSQ035N06HZGTR

    MOSFET N-CH 60V 3.5A TSMT6
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    DigiKey () RSQ035N06HZGTR Cut Tape 6,234 1
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    RSQ035N06HZGTR Tape & Reel 3,000 3,000
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    Mouser Electronics () RSQ035N06HZGTR 9,876
    • 1 $1.26
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    RSQ035N06HZGTR 8,935
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    Newark RSQ035N06HZGTR Cut Tape 1
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    TTI RSQ035N06HZGTR Reel 3,000
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    TME RSQ035N06HZGTR 3,000
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    Ameya Holding Limited RSQ035N06HZGTR 50 1
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    onsemi FDPF035N06B-F154

    MOSFET N-CH 60V 88A TO220F
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    DigiKey FDPF035N06B-F154 Tube 941 1
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    Avnet Americas FDPF035N06B-F154 Tube 26 Weeks 1,000
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    Mouser Electronics () FDPF035N06B-F154 490
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    FDPF035N06B-F154 490
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    Rochester Electronics FDPF035N06B-F154 3,000 1
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    EBV Elektronik FDPF035N06B-F154 28 Weeks 1,000
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    Goford Semiconductor GT035N06T

    N-CH, 60V,170A, RD(MAX)<3.5M@10V
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    DigiKey GT035N06T Tube 96 1
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    TME GT035N06T 1
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    Diotec Semiconductor AG DI035N06PQ2

    MOSFET 2N-CH 60V 35A 8TDSON
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    DigiKey DI035N06PQ2 Tape & Reel 5,000
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    Mouser Electronics () DI035N06PQ2
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    DI035N06PQ2
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    TME DI035N06PQ2 1
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    Find more 035N06 price and stock on Findchips.com

    035N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    035N06L

    Abstract: IPD035N06L3 JESD22 IPD035N06L3 G IPD035N06 035N06
    Contextual Info: 035N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 3.5 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPD035N06L3 PG-TO-252-3 035N06L 035N06L JESD22 IPD035N06L3 G IPD035N06 035N06 PDF

    035N06P

    Abstract: 035N06
    Contextual Info: SEMICONDUCTOR 035N06P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		KU035N06P Fig14. Fig15. Fig16. 035N06P 035N06 PDF