12DEC94 Search Results
12DEC94 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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9448 diode
Abstract: w 9446 BYT52 diode 9446 diode R/gi 9448 diode 9447 diode byt52 diode byt52 m 1/gi 9448 diode
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BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M 100KAV 12-Dec-94 9448 diode w 9446 BYT52 diode 9446 diode R/gi 9448 diode 9447 diode byt52 diode byt52 m 1/gi 9448 diode | |
BYV26E
Abstract: BYV26C BYV26A islp
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BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E islp | |
diodes bywContextual Info: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes: |
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BYW82. BYW86 1N5624 1N5625 12-Dec-94 diodes byw | |
BYS10-45
Abstract: bys10
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BYS10 S10-25 S10-35 BYS10-45 25K/W 12-Dec-94 BYS10-45 bys10 | |
byt54mContextual Info: Tem ic BYT54 S e m i c o n d u c t o r s Fast Silicon Mesa Rectifiers Features • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics Applications Very fast rectifiers and switches J 94 9539 |
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BYT54 BYT54A BYT54B BYT54D BYT54G BYT54J BYT54K BYT54M BYT54A. | |
Contextual Info: Temic BAW56 Semiconductors Silicon Planar Dual Diode Features • Common anode Applications Fast switches in thick and thin film circuits 94 8 5 5 0 Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current |
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BAW56 12-Dec-ev. 12-Dec-94 150mA | |
8550 sot-23Contextual Info: TEMIC BAV70 S e m i c o n d u c t o r s Silicon Planar Dual Diode Features • Common cathode Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Type Reverse voltage tp=l|As Peak forward surge current |
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BAV70 12-Dec-94 150mA 8550 sot-23 | |
by203
Abstract: by203/25
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BY203/. BY203/12S BY203/16S BY203/20S 12-Dec-94 by203 by203/25 | |
Contextual Info: Tem ic BYW178 S e m i c o n d u c t o r s Very Fast Silicon Mesa Rectifier Features • G lass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristics • Very fast reverse recovery tim e • Low reverse recovery peak current |
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BYW178 12-Dec-94 | |
Contextual Info: T em ic BAW75 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=l lS |
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BAW75 12-Dec-94 | |
Contextual Info: Tem ic BAV17.BAV21 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diodes Applications General purposes 9 4 9367 Absolute Maximum Ratings Tj = 25 °C Parameter Test Conditions Peak reverse voltage Reverse voltage IVpe Symbol Value Unit BAV17 V RRM 25 |
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BAV17. BAV21 BAV17 BAV18 BAV19 BAV20 BAV21 | |
Contextual Info: TeMIC BZW03C. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits |
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BZW03C. 100ns, 12-Dec-94 | |
Contextual Info: TEMIC BZW03D. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • G lass passivated junction • H erm etically sealed package • C lam ping sealed package Applications Voltage regulators and transient suppression circuits |
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BZW03D. 500ns 12-Dec-94 | |
Contextual Info: Tem ic TZM5221B.TZM5267B S e m i c o n d u c t o r s Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221B.1N5267B • Low reverse current level • V /-tolerance ± 5% with the devices |
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TZM5221B. TZM5267B 1N5221B. 1N5267B D-74025 12-Dec-94 | |
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BY448
Abstract: BY458 Telefunken
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BY448 BY458 BY448 D-74025 12-Dec-94 BY458 Telefunken | |
BYV27Contextual Info: BYV27/. Ultra Fast Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package Applications Very fast rectifier e.g. for switch mode power supply |
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BYV27/. D-74025 12-Dec-94 BYV27 | |
BYV26
Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E
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BYV26 400mA, D-74025 12-Dec-94 BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E | |
BZW03CContextual Info: BZW03C. Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits 94 9588 Absolute Maximum Ratings |
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BZW03C. 100ms, D-74025 12-Dec-94 BZW03C | |
BA479G
Abstract: BA479S
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BA479G BA479S D-74025 12-Dec-94 BA479S | |
BAV99
Abstract: 8550 sot-23 BAV99 national
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BAV99 8mmx10mmx0 12-Dec-94 D-74025 BAV99 8550 sot-23 BAV99 national | |
byw178
Abstract: BYW17
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BYW178 D-74025 12-Dec-94 byw178 BYW17 | |
BYT52J
Abstract: BYT52 BYT52A BYT52B BYT52D BYT52G BYT52K BYT52M 9446 diode
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BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 12-Dec-94 BYT52J BYT52 BYT52A BYT52B BYT52D BYT52G BYT52K BYT52M 9446 diode | |
1N4151Contextual Info: 1N4151 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current |
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1N4151 D-74025 12-Dec-94 1N4151 | |
BYT62Contextual Info: BYT62 Silicon Mesa Rectifier Features D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristic Low reverse current Applications High voltage rectifier 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage |
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BYT62 60K/W D-74025 12-Dec-94 BYT62 |