12A 650V MOSFET Search Results

STF11NM65

Abstract: p11nm6
Contextual Info: STB11NM65N-1 - STF11NM65N STP11NM65N - STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB11NM65N-1 710V < 0.38Ω 12A STF11NM65N 710V < 0.38Ω 12A(1) STP11NM65N

F12N65

Abstract: P12N65 PJP12N65
Contextual Info: PJP12N65 / PJF12N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

12N65F

Contextual Info: HY12N65T / HY12N65FT 650V / 12A 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS

SVD12N65F

Contextual Info: SVD12N65T/SVD12N65F 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

Contextual Info: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF12N65

Contextual Info: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF12N65

Abstract: 12A 650V MOSFET
Contextual Info: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

Contextual Info: AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

Contextual Info: AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

AOT12n65

Contextual Info: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

12A 650V MOSFET

Abstract: 6A 650V MOSFET
Contextual Info: SSFP12N65 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 650V Simple Drive Requirement ID25 = 12A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

11NM65N

Abstract: STF11NM65 STF11NM65N STP11NM65N STB11NM65N STI11NM65N-STP11NM65N-STW11NM65N STI11NM65N stw11nm65n JESD97
Contextual Info: STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) Max ID STI11NM65N 710 V < 0.38 Ω 12 A STB11NM65N 710 V < 0.38 Ω

11NM65N

Abstract: STF11NM65 STI11NM65N STP11NM65N JESD97 STB11NM65N STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N
Contextual Info: STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) Max ID STI11NM65N 710 V < 0.38 Ω 12 A STB11NM65N 710 V < 0.38 Ω

SSE12N65SL

Abstract: MosFET
Contextual Info: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

SSRF12N65SL

Abstract: MosFET 6A 650V MOSFET
Contextual Info: SSRF12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 DESCRIPTION The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

h12n65

Abstract: 12A 650V MOSFET
Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.03.24 Revised Date :2009.08.05 Page No. : 1/6 MICROELECTRONICS CORP. H12N65 Series H12N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 650V,12A

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Features Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically