12N60C Search Results

12N60C Datasheets (4)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
12N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60CD1	IXYS	HiPerFAST IGBT Lightspeed	Original	PDF	60.61KB	2

12N60C Price and Stock

Filter by Manufacturer

Select Manufacturer


onsemi FQP12N60C - Rail/Tube (Alt: FQP12N60C)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQP12N60C	Tube			1,000	1 - 10 - 100 - 1000 $1.15 10000 $1.11	Get Quote
Rochester Electronics	FQP12N60C		817		1	1 - 10 - 100 $1.41 1000 $1.17 10000 $1.04	Buy Now
Flip Electronics	FQP12N60C		869			1 $0.94 10 $0.94 100 $0.94 1000 $0.94 10000 $0.94	Get Quote
onsemi HGTP12N60C3D - Rail/Tube (Alt: HGTP12N60C3D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HGTP12N60C3D	Tube			800	1 - 10 - 100 - 1000 $2.01 10000 $1.86	Get Quote
Newark	HGTP12N60C3D	Bulk			100	1 - 10 - 100 $4.83 1000 $3.02 10000 $2.48	Buy Now
Flip Electronics	HGTP12N60C3D		800			1 $1.06 10 $1.06 100 $1.06 1000 $1.06 10000 $1.06	Get Quote
onsemi FQPF12N60CT - Rail/Tube (Alt: FQPF12N60CT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQPF12N60CT	Tube			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGA12N60CD1 IGBTs 24 Amps 600V 2.7 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGA12N60CD1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor HGTP12N60C3 Trans IGBT Chip N-CH 600V 24A 104W 3-Pin(3+Tab) TO-220AB Rail
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HGTP12N60C3		540			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 12N60C price and stock on Findchips.com

12N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12n60c Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60c o-263 o-220 728b1 +4transistor 12n60c ixga 12n60c ixga12n60c ixgp12n60c	PDF
Contextual Info: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	12n60c isoplus247tm	PDF
Contextual Info: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	12n60cd1	PDF
12N60CD1 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600	Original	12n60cd1 o-263 o-220	PDF
12N60C Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	12n60c o-247	PDF
Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60c o-263 o-220 728b1	PDF
12N60CD1 Abstract: 12n60c Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	12n60cd1 728b1 12n60c	PDF
IXGA 12N60C Contextual Info: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM	OCR Scan	12n60c o-263 o-220 ixga 12n60c	PDF
Contextual Info: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12n60c isoplus247tm 728b1	PDF
12n60c Abstract: transistor 12n60c 98503B 12N60 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	12n60c o-247 728b1 transistor 12n60c +298503b 12n60	PDF
IGBT g Abstract: TO263AA Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60cd1 o-220 o-263 igbt g +1to263aa	PDF
Contextual Info: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ	OCR Scan	12n60c to150 o-220 o-263	PDF
Contextual Info: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 15 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	isoplus247tm 12n60c e153432	PDF
12N60CD1 Abstract: IGBT g 12N60CD Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V	Original	12n60cd1 o-263 with055 igbt g +112n60cd	PDF

12n60c Abstract: transistor 12n60c ISOPLUS247 Contextual Info: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12n60c isoplus247tm 728b1 transistor 12n60c +1isoplus247	PDF
C25 diode Abstract: GE 0270 Contextual Info: nixY S Advanced Technical Information HiPerFAST IGBT IXGA 12N60CD1 VCES IXGP 12N60CD1 C25 V 24 A 2.1 V 120 ns V CE sat tf'(typ) oe 600 Gil OE Maximum Ratings Symbol Test Conditions V CES Tj =25°C to 150°C 600 V V CGR Tj = 25° C to 150° C; RGE= 1 MU	OCR Scan	12n60cd1 o-220 o-263 c25 diode +1ge 0270	PDF
IXGH 12N60CD1 Abstract: IXGH12N60CD1 12N60CD1 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES IC25 = = = = VCE sat tfi(typ) 600 V 24 A 2.1 V 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	12n60cd1 o-247 ixgh 12n60cd1 ixgh12n60cd1	PDF
12N60CD1 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES IC25 = = = = VCE sat tfi(typ) 600 V 24 A 2.1 V 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	12n60cd1 o-247	PDF
12n60c Abstract: IXGC 12N60C transistor 12n60c IXGA12N60C IXGC12N60CD1 12N60CD1 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	12n60c 12n60cd1 isoplus247tm 15fred +7ixgc12n60cd1 728b1 123b1 065b1 ixgc 12n60c transistor 12n60c ixga12n60c	PDF
Contextual Info: □ IXYS Advanced Technical Information H iP e r F A S T IG B T L ig h t s p e e d ™ S e r ie s IXGH 12N60CD1 Symbol TestC onditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20	OCR Scan	12n60cd1 o-247	PDF
IXGC 12N60C Abstract: 12N60C Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	isoplus247tm 12n60c 12n60cd1 isoplus220tm +5e153432 728b1 123b1 065b1 ixgc 12n60c	PDF
12n60c Abstract: 12N60 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	isoplus247tm 12n60c 12n60cd1 isoplus220tm +4728b1 123b1 065b1 12n60	PDF
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	12n60cd1 o-263 728b1	PDF
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A	Original	12n60cd1 o-247	PDF

12N60C Search Results

12N60C Datasheets (4)

12N60C Price and Stock

onsemi FQP12N60C

onsemi HGTP12N60C3D

onsemi FQPF12N60CT

IXYS Corporation IXGA12N60CD1

Harris Semiconductor HGTP12N60C3

12N60C Datasheets Context Search

12n60c

12N60CD1

12N60C

12N60CD1

IXGA 12N60C

12n60c

IGBT g

12N60CD1

12n60c

C25 diode

IXGH 12N60CD1

12N60CD1

12n60c

IXGC 12N60C

12n60c