128KX3 Search Results

IBM0418A41NLAB

Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
Contextual Info: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers

K7A401800B-QC

Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Contextual Info: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters

K7A401800B

Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
Contextual Info: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters

IBM0418A8ACLAB

Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
Contextual Info: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology

K7N401801B

Abstract: K7N403601B
Contextual Info: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,

CY7C1350

Abstract: IDT71V546 MCM63Z736
Contextual Info: fax id: 1103 CY7C1350 PRELIMINARY 128Kx36 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V546, MT55L128L36P and MCM63Z736 • Supports 143-MHz bus operations with zero wait

IBM0418A4ANLAB

Abstract: IBM0418A8ANLAB IBM0436A4ANLAB IBM0436A8ANLAB
Contextual Info: . Preliminary IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25µ CMOS technology • Synchronous Register-Latch Mode of Operation

IBM0418A41XLAB

Abstract: IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB
Contextual Info: . Preliminary IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology

7C1351-40

Abstract: 7C1351-50 7C1351-66 CY7C1351 IDT71V547 MCM63Z737
Contextual Info: fax id: 1102 CY7C1351 PRELIMINARY 128Kx36 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V547, MT55L128L36F and MCM63Z737 • Supports 66-MHz bus operations with zero wait states

Contextual Info: I = = = = •= Preliminary IBM0418A81QLAA IBM0418A41 QLAA IBM0436A81QLAA IBM0436A41QLAA 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations

Contextual Info: I = =• = Preliminary IBM0418A80QLAB IBM0418A40QLAB IBM0436A80QLAB IBM0436A40QLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 Organizations • Registered Addresses, W rite Enables, Synchro­ nous Select, and Data Ins.

AM29F010

Contextual Info: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable

Contextual Info: 1ZÖKX3Z SKMMMOdUie ELECTRONIC DESIGNS IN C | 128KX32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static The EDI8G32130C is a high speed 4 megabit Static RAM Random Access Memory module organized as 128K words by 32 bits. This module is • Access Times

Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

Contextual Info: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each

7705ac

Abstract: 128KX32 EDI8F32128C jedec 64-pin simm 7705
Contextual Info: EDI8F32128C 128Kx32 SRAM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and12ns CMOS: 15, 20, 25, 35, 55, 70, 85 and 100ns • Individual Byte Selects • Fully Static, No Clocks

Contextual Info: T T WS128K32-XXX M/HITE /MICROELECTRONICS • Organized as 128Kx32; User Configurable as 25BKx16 or 512Kx8 ■ Commercial, Industrial and M ilitary Temperature Ranges ■ 5 Volt Power Supply 128Kx32 SRAM MODULE FEATURES ■ Access Time 17 and 20nS ■ MIL-STD-883 Compliant Devices Available

Contextual Info: YZÀ 128Kx32 SRAM MODULE PRELIMINARY* • Commercial and Industrial Temperature Ranges ■ TTL Compatible Inputs and C M O S Outputs ■ 5 Volt Pow er Supply FEATURES ■ Access Times of 17nS to 45nS ■ W PS128K32-XPJX 1/VHITE /MICROELECTRONICS Packaging

717G

Contextual Info: WS128K32-XXX WHITE /MICROELECTRONICS a 128Kx32 SRAM M ODULE, SM D 5962-93187 & 5962-95595 FEATURES • A ccess Tim es of 1 5 ,1 7 , 20, 25, 35, 45, 55ns C om m ercial, Industrial and M ilita ry T e m pe ratu re Fianges ■ M IL-S TD -883 C om pliant D evices A v a ila b le

LT 1385

Contextual Info: a WHITE /MICROELECTRONICS 128Kx32 SRAM/FLASH MODULE WSF128K32-XH2X PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 25ns SRAM and 120ns (FLASH) ■ ■ A cce ss Tim es of 25ns (SRAM ) and 90ns (FLASH) ■ Sector A rc h ite c tu re • 8 equal size sectors o f 16K bytes each

Contextual Info: a WPS128K32G-XPJX WHITE /MICROELECTRONICS 128Kx32SRAM MODULE PRELIMINARY* FEATURES • ■ A ccess Tim es of 1 5 ,1 7 , 20, 25, 35ns ■ G2 Pinout fo r Upgrade Path to M ilita r y Grade Device Packaging: ■ 5 V olt Pow er S upply • 68 Lead, P lastic PLCC, 24.71 mm 0.973 inch square

Contextual Info: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM

Contextual Info: GLT44032-E 128K x 32 Embedded EDO DRAM Macro FEATURES ◆ Logical organization: 128Kx32 bits ◆ Physical organization: 512x256x32 ◆ Single 3.3v ± 0.3v power supply ◆ 512-cycle refresh in 8 ms ◆ Refresh modes: RAS only, CBR, and Hidden ◆ Single CAS with 4 DQM for Byte Write control

Contextual Info: K7N403609B K7N403209B K7N401809B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters