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    HY6116-10

    Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
    Contextual Info: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high


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    t-46-23-12hy61162048-wordhy6116-10+6hy6116-12hy6116-15100ns120ns150nshyundai semiconductor PDF

    Contextual Info: — =Z1- CY7B164 CY7B166 ^ CYPRESS SEMICONDUCTOR Features • Ultra high speed — U a = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable ÖE feature (7B166) • TTL-compatible inputs and outputs


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    cy7b164cy7b1667b166y7b164+1166only PDF

    Contextual Info: Programmable Logic Element PLE Family Features/ Benefits Ordering Information • Programmable replacement tor conventional TTL logic PLE5P8 A C N SHRP • Reduces 1C Inventories and simplifies their control • Expedites and simplifies prototyping and board layout


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    CY7C167A

    Abstract: Zl81
    Contextual Info: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


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    cy7c167adesc167a20-lead300-mil+235dmbzl81 PDF

    CDM6116

    Contextual Info: 37E D HARRIS SEMICOND SECTOR I 43QE271 QG2b224 3' « H A S - High-Reliability CMOS LSI Devices CDM6116BC/3 Advance Information High-Reliability CMOS 2048-Word By 8-Bit LSI Static RAM A 7 - 1 A 6 - 2 2 4 - V0D 2 3 - AS 22 - A9


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    43qe271qg2b224cdm6116bc/32048-word+624-pin-l/03-l/0892cs-4049892cw-40497cdm6116 PDF

    6516

    Contextual Info: m HM-6516/883 HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM January 1992 Description Features • This Circuit Is Processed In Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby. 275^W Max.


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    hm-6516/883m-6516/883mil-m38510mil-std-1835+3gd1p1-t24cqcc1-n326516 PDF

    7C291

    Contextual Info: This is an abbreviated datasheet. Contact a Cypress representative for complete specifications. For new designs, please refer to the CY7C291A/2A. /''’Ypppqc SEMICONDUCTOR • Windowed for reprogrammability • CMOS for optimum speed/power Reprogrammable 2K x 8


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    cy7c291a/2a300-mil600-milcy7c291+6cy7c292126x128300-m7c291--7c292--7c291 PDF

    53RA1681

    Contextual Info: a 53/63RA1681/A Advanced Micro Devices 2048 x8 High Performance Registered PROM with Asynchronous Enable FEATURES/BENEFITS APPLICATIONS • Synchronous output enable • Microprogram control store • Edge-triggered “D" registers • State sequencers • Versatile 1:16 user programmable Initialization


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    53/63ra1681/a24-pln53/63ra168153/63ra1681a+2ra1681/a53ra1681 PDF

    CDM6117AE3

    Abstract: M-36261 ICAN-6525 RCA-CDM6117A-3 CDM6117A-3 ips london rca power transistor cdm6117ae CDM6117A mo-015aa
    Contextual Info: C M O S M em ory/M icroprocessor Products _ Solid State Division CDM6117A-3 v/ 003967 _ T " ^ 6 ’7 A 6 - 2 24 - VDD 23 - A8 A 5 - 3 A 4 - 4 21 - W F 5 20 - "£5 A 3 - 1 22 - A9 A 2 - 6


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