125JI Search Results

Contextual Info: f f t H A R R HM-6504 I S S E M I C O N D U C T O R 4096 F e b rua ry 1992 1 CMOS RAM X Features Description • Low Power Max. • Low Power O peration.35mW/MHz Max. • Data Min.

TSL216

Contextual Info: TSL216 192 x 1 1NTEGRATED OPTO SENSOR SOESOO6-J U N E 1992 * Contains Three 64-Bit Static Shift Registers * Offers Extendable Data I/O for Expanding the Number of Sensors * * top v ie w Contains Analog Buffer With Sample-andHold for Analog Output Over Full Clock

cy37128

Abstract: CY37128P160-125AC CY37128V CY7C375 CY37128P84-125JI cy3700
Contextual Info: = m m m !Æ '^ r ^ r : c Q CY3 7 1 2 8 PR £um A ^Y UltraLogic 128-Macrocell ISR™ CPLD — tco = 4.0 ns Features • • • • • • • • • • • 128 macrocells in eight logic blocks • In-System Reprogrammable™ ISR™ — JTAG-compliant on-board programming

Contextual Info: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

KM44C1003C

Abstract: km44c1003cj 71411-4
Contextual Info: KM44C1003C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit Fast Page M ode Q uad C A S C M O S DRAM s. Fast P age M ode offers high s p e e d random access of m em ory ce lls w ithin the sam e row. A cce ss tim e -5 , -6, -7 o r -8 , p o w e r

Contextual Info: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers

dram 88 pin

Contextual Info: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T

Contextual Info: PRELIMINARY .ü ïïi04,0^ !? -j, MEG x 4 DRAM « ch«oL„ „ « DRAM 1 MEG x 4 DRAM FEATURES * * » * «• Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CMOS silicon-gate process All inputs, outputs and clocks are TTL-com patible

Contextual Info: MT10D25640 256K X 40 DRAM MODULE |U |IC = R O N 256K x 40 DRAM FAST PAGE MODE MT10D25640 LOW POWER, EXTENDED REFRESH (MT10D25640 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.

Contextual Info: STLC3065 WLL SUBSCRIBER LINE INTERFACE C IR C U IT • MONOCHIP SLIC OPTIMISED FOR W LL AP­ PLICATIONS ■ IMPLEMENT ALL KEY FEATURES OF THE BORSHT FUNCTION ■ SINGLE SUPPLY 5.5 TO 15.8V ■ BUILT IN DC/DC CONVERTER CONTROL­ LER. ■ SOFT BATTERY REVERSAL WITH PRO­

Contextual Info: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: HIGH VOLTAGE POWER OPERATIO NAL AM PLIFIERS PA41/PA42 • PA41A/PA42A A p è x H T T P : //W W W .A P E X M IC R O T E C H .C O M I I C M T E C H N O L O C Y 8 0 0 5 4 6 -A P E X (8 0 0 ) 5 4 6 -2 7 3 9 FEATURES • MONOLITHIC MOS TECHNOLOGY • LOW COST

16C5S

Abstract: 16C7S
Contextual Info: ADVANCE MT4 L C1 M 16C3/5/6/7 S 1 MEG X 16 W IDE DRAM I^ IIC R C D N WIDE DRAM 1 MEG 16 DRAM X 5.0V SELF REFRESH (MT4C1M16C3/5/6/7 S) 3.0/3.3V, SELF REFRESH (MT4LC1M16C3/5/6/7 S) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Timing 60ns access 70ns access

m62x42

Abstract: OKI M62X42B M62X42B 400P Crystal STDP MSM62X42BX
Contextual Info: O K I Sem iconductor MSM62X42B REAL TIM E CLOCK 1C W ITH B U ILT-IN CRYSTAL DESCRIPTION The MSM62X42B is a bus-connection Micro* com puter peripheral IC of a Real Tim e Clock w ith built-in crystal in the p erpetual calendar w hich can be read and w ritten from a second

Contextual Info: P a n a Y S e r i e s TheOnetöWatchfor Constant Innovation-Making theFuture ComeAlive M IC R O C O M P U TE R M N101 COO MN101C23A/23C/23D/35A/ 35C/35D LSI User’s Manual Pub. No.21435-01OE Panasonic PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd.

Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

77030-A7

Abstract: diodo zener 15a diodo zener 22v diodo zener j3 diodo zener j1 110 volt ac transformer less power supply 6v 77030A7 diodo d1 kl 05 diodo 1N DIODO SERIES
Contextual Info: 794749; Rev 3:5/93 -5V, -12V, -15V, an d A djustable Inverting Current-Mode PW M R egulators General Description The MAX736/MAX737/MAX739 have fixed outputs of -12V, -15V, and -5V respectively. The MAX759 is adjustable from OV to -15V. Output voltages beyond -15V require a transformer.

Contextual Info: April 1997 PRELIM INARY fllL M icro Linear ^ ML6421 Triple Phase and Sinx/x Equalized, Low-Pass Video Filter GENERAL DESCRIPTION FEATURES The ML6421 monolithic BiC M O S 6th-order filter provides fixed frequency low pass filtering for video applications. This triple phase-equalized filter with Sinx/x correction is

Contextual Info: November 1995 M iL M ic r o L in e a r preliminary ^ ML6420 Triple Phase-Equalized, Low-Pass Video Filter GENERAL DESCRIPTION FEATURES The ML6420 monolithic BiCMOS 6th-order filter provides fixed frequency low pass filtering for video applications. This triple phase-equalized filter is designed for input anti­

circuit integrate TB 1226 CN

Abstract: RC4200ANB RC4200ADE RC420 RM4200 rv4200nb "analog multiplier" RC4200NB rc4200 raytheon
Contextual Info: RAYTHEON-, 7597360 SEMICONDUCTOR 57 T F 1 TSTTgbD RAYTHEON COf 5 7C “i 04913 D T-73- LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS R a y H ie o n Analog Multiplier Features • High accuracy Non-linearity — 0.1% maximum Temperature coeff icient— 0.005%/° C maximum

sub-woofer pro amplifier schematic circuit diagram

Abstract: sub-woofer pro amplifiers schematic circuit diagram TDA2052 TDA SUBWOOFER audio amplifier application tda2052 transistors 8 subwoofer circuit 40W Subwoofer diagram TDA SUBWOOFER AMPLIFIER 60w subwoofer audio amplifier circuit diagram subwoofer crossover schematic
Contextual Info: TDA2052 60W Hi-Fi AUDIO POWER AMPLIFIER WITH M U T E /STAND-BY i SU PPLY VOLTAGE RANGE UP TO ±25V • SPLIT SU PPLY OPERATION ■ HIGH OUTPUT POW ER U P TO 60W MUSIC PO W ER ■ LOW DISTORTION ■ MUTE/STAND-BY FUNCTION a NO SWITCH ON/OFF NOISE . AC SHORT CIRCUIT PROTECTION

10W class a audio power amplifier

Contextual Info: / = 7 SGS-THOMSON ^ 7 # . K Æ D M tEüi »*© TDA7298 28W Hi-Fi AUDIO POWER AMPLIFIER WITH MUTE /STAND-BY PRODUCT PREVIEW . SUPPLY VOLTAGE RANGE UP TO ±22V • SPLIT SUPPLY OPERATION ■ HIGH OUTPUT POWER UP TO 28W MUSIC POWER ■ LOW DISTORTION . MUTE/STAND-BY FUNCTION

Contextual Info: <- Am79C31 A/312 A a Digital Exchange Controller DEC /Digital Transceiver Controller (DTC) PRELIM IN ARY > 3 DISTINCTIVE CHARACTERISTICS Digital access to the ISDN Compatible with CCITT l-Series recommenda­ tions at ‘S’ a n d ‘T’ reference points

Contextual Info: •HYUNDAI HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Rage mode CMOS ORAM module consisting of four HY5117800B In 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for