1259C Search Results

P-Channel Depletion Mosfets

Abstract: B4477 DG381AAK Depletion
Contextual Info: SI L I C O N I X T «SIX DG381A/384A/387A/390A General Purpose CMOS Analog Switches e x ' S ilic o n ix Jm B flSSM73S Q O l h M M B 33E D INC in c o r p o r a te d -T - S H I FEATURES BENEFITS

Contextual Info: LMLL12 •Vi» /lif iu LMU12 mm 12 x 12-bit Parallel Multiplier DEVICES INCORPORATED FEATURES_ □ □ □ □ 20 ns Worst-Case Multiply Time Low Power CMOS Technology Replaces TRW MPY012H Two's Complement, Unsigned, or Mixed Operands □ Three-State Outputs

Contextual Info: EL2190/EL2195 SflE D é l a n c é • EL2190/EL2195 e ■?MlSHWBFI»MA E*mOlâ:WlS«œD:efflCtlfTS ■ i ^ B 312RSS7 0002243 14e! « E L A M Wideband, Fast Settling Operational Amplifier ELANTEC INC ~[O F eatu res G eneral D escrip tion • Low offset voltage—0.5 mV typ.,

Contextual Info: • HA R R I S SEMICON] S E CT OR Technical Data •' 37E D _ _ V ^V • -g 43 02 271 00235=12 S B H A S CD54/74AC046, CD54/74ÂC648 CD 54/74ACT646, C D 54/74ACT648 Advance Information T - S 2 .- 3 . I ►-80 *-è i ►-82 ►-83 •DATA Ü—84 PORT

270645

Abstract: intel 27264 80C32 Intel B7C51
Contextual Info: A E W Ä N K g H O D M F O ^ O m Y lK M in te i 8XC 52/54/58 24 MHz CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Com m ercial/Express 87C52/80C52/80C32/87C54/80C54/87C58/80C58 ‘ See Table 1 for Proliferation Options 6 Interrupt Sources High Performance CHMOS EPROM/

Contextual Info: J' ’ _ •■■■ ’WP’’ _ ^ _ L 7 C 1 7 3 /1 7 4 8K x 8 Cache-Tag Static RAM mm DEVICES INCORPORATED FEATURES □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear

BV EI 302 2003

Abstract: BV EI 305 2504
Contextual Info: HARRIS SEÌIICOND SECTOR Technical Data •' 37E D 4302271 00255=12 S B H A S _ _ CD54/74AC046, CD54/74ÂC648 CD 54/74ACT646, C D 54/74ACT648 Advance Information T - S 2 .- 3 . I ►-80 »-ai Octal-Bus Transceiver/Registers, 3-State ►-82 * A OATA PORT

MCR68

Abstract: MCR69-1 motorola MCR69-2
Contextual Info: MOTOROLA SC DIODES/OPTO 31E I> 13 b3b72SS 0002040 2 ElflO T? M CR 68 Series M CR 69 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Stability and Reliability

ScansUX7

Abstract: zener diode db2 ad7528lr TDB11 ad752b AD7524JN AD7524JP G479-15-8 AD7524KN AD7524KP
Contextual Info: ANALOG DEVICES □ CMOS 8-Bit Buffered Multiplying DAC _ AD7524 FEATURES Microprocessor Compatible 6800,8085,280,610. TTL/CMOS Compatible Inputs On-Chip Data Latches End Point Linearity Low Power Consumption Monotonicity Guaranteed (Full Temperature Range)

MC145698

Abstract: MC145B MC14568B MC14569B MC145688 MCI45688 MC14522B MC14526B MC14XXXBCL MC14XXXBCP
Contextual Info: MC14568B MOTOROLA P H A SE CO M PARATO R AND PR O G R A M M A BLE CO U N TERS The M C14568B consists ot a phase com parator, a divide bv-4, 16. 64 o r 100 coun ter and a program m ab le divide by-N 4 bit binary c o u n te r all pos»tive-edge triggered* c o n s tru c te d w ith M O S P channel and

mc140938

Abstract: mc14093 mc14076 MC140778 ceramic case 632 mc14068 mc14xxxbcp CD4069UB mc14073 MC14069UB
Contextual Info: MC14068B See Page 6-5 ^ M O T O R O L A MC14069UB HEX INVERTER T h e M C14G69UB hex inverter is constructed w ith M OS P-channel and N-channel enhancement mode devices in a single m onolithic structure. These inverters find prim ary use where low power

Contextual Info: / TRIPLE 3-INPUT "NANO" GATE MC2107 MC2007 \ MTTL II MC2100/2000 series MC2157 MC2057 This device consists o f three 3-input AND gates driving o utp ut inverters. These gates can be used to build a pulse shaping network fo r interfacing w ith discrete component circuits.

Contextual Info: DS9622 National Semiconductor DS9622 Dual Line Receiver General Description Features The DS9622 is a dual line receiver designed to discriminate a worst case logic swing of 2V from a ± 10V common mode noise signal or ground shift, A 1.5V threshold is built into the

Contextual Info: 100304 NATIONAL SEPIICOND LOGIC blE » • b S D U E S GG7Stilb 2 ^ «NSCl ¡33 National ÆM Semiconductor 100304 Low Power Quint AND/NAND Gate General Description Features The 100304 is monolithic quint AND/NAND gate. The Func­ tion output is the wire-NOR of all five AND gate outputs. All

SA78HV15CDA

Abstract: 78HV24CU HV24C 24V 13,8V 15A v06c 78HV05CDA
Contextual Info: mA78H V 00/SA 78H V 00/78M H V 00/78M H V 00C -D A ,D B ,U DESCRIPTION The 78HVOO series o f m o n o lith ic ThreeT e rm ina l P ositive V oltage R egu lators em ­ p lo y 60 v o lt in p u t b reakdo w n, th e rm a l s h u t­ do w n and safe-area c o m pensa tion, m aking

N mosfet 100v 500A

Contextual Info: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.

2n5195

Abstract: Motorola transistors 2N5192
Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA b y 2 N 5 W /D 2N 5194 2N 5195* Silicon PNP Pow er Transistors 'M o t o r o la P r e fe r r e d D e v ic e . . . for use in power am plifier and switching circuits, — excellent safe area limits. Complem ent to NPN 2N 5191, 2N5192

VQA15

Contextual Info: TL783C HIGH-VOLTAGE ADJUSTABLE REGULATOR D2659. SEPTEMBER 1981 -R E V IS E D SEPTEMBER 1988 KC PACKAGE • Output Adjustable from 1.25 V to 125 V TOP VIEW • 700-mA Output Current • Full Short-Circuit, Safe-Operating-Area, and Thermal Shutdown Protection

NE553

Abstract: 5k trimpot mepco capacitor NE5539N SE5539 0405B 0581B NE5539D NE5539F SE5539F
Contextual Info: Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier DESCRIPTION NE/SE5539 PIN CONFIGURATION The NE/SE5539 is a very wide bandwidth, high slew rale, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and

K1259

Abstract: DS1259 MAX1259 MAX1259CPE MAX1259CWE MAX1259EPE MAX1259EWE MAX1259MJE capacitors BF
Contextual Info: JVWVAXJX/X 19-4638; Rev. 1; 4/94 M A X I2 5 9 B a tte r y M a n a g e r Th e M A X 1 2 5 9 b a tte ry m a n a g e r p ro v id e s b a c k u p -b a tte ry s w itc h in g fo r C M O S R AM , m ic ro p ro c e s s o rs , or oth er lo w -p o w e r lo g ic ICs. It a u to m a tic a lly s w itc h e s to the

MJE520 equivalent

Abstract: Ha777 voltage follower A777 IN914 n6124
Contextual Info: MA777 Precision Operational Amplifier FEATURES GENERAL DESCRIPTION • Low offset voltage and offset current The /¿A777 is a m onolithic Precision Operational Amplifier. It is an excellent choice when performance versus cost trade-offs are possible between super beta

MIL-C-26655

Abstract: ADC1111 MIL-I-46058 MIL-S-23586 26655B
Contextual Info: A OBS OLE TE SVM. A DR. DESCRIPTION APPD. DATE INITIAL RELEASEPER E.R. NO. OBS -' CKD. OLE . TE REVSTATuslllllllllllll1 1 OF SHEETS 1112131"151617181911011111211311"1 UNLESS OTHERWISE SPECIFIED DRAWN 51 DATE DIMENSIONSARE IN INCHES TOLERANCES: DECIMALS: .XX !

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

Contextual Info: SAMSUNG S EMIC ON DUCT OR INC ;05 KS54ÄHCT O Q Q KS74AHCT D E | ? T b 4 1 4 E OOQb 1 2 ö 1 | 8"Bit Universal Shift/Storage Registers with 3-State Outputs ~T- FEATURES DESCRIPTION < Multiplexed I/O ports provides Improved bit density These eight-bit universal registers feature multiplexed I/O