124OC Search Results
124OC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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EVW020A0S6R041Z
Abstract: EVW020A0S6 ipc-9592 IEC60950-1 SR-332 VDE0805-1 EVW020A0S6R041-HZ 124oC EVW020A0S6R0
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evw020a0s6r075vdc2002/95/ecipc-9592+11 | |
HX8340B
Abstract: HX8340-B mx 362-0
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hx8340-b176rgb224october225october+2 | |
CY8C41123
Abstract: CY8C41223
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cy8c41123cy8c4122312-bit16-bit | |
heat resistorContextual Info: Data Sheet March 3, 2011 EVW020A0S6R0 Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 6.0Vdc Output; 20A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC (-Z versions) • Compliant to ROHS EU Directive 2002/95/EC with |
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evw020a0s6r075vdc2002/95/ecipc-9592+5 | |
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Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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fdd1600n10alzd | |
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
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hx8369-a00-dshx8369-a00480rgb285october+5 | |
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Contextual Info: Data Sheet March 3, 2011 EVW020A0S6R0 Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 6.0Vdc Output; 20A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC (-Z versions) • Compliant to ROHS EU Directive 2002/95/EC with |
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evw020a0s6r075vdc2002/95/ecipc-9592+3 | |
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Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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fdd1600n10alzd | |
jedec MO229
Abstract: BUT14
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12-bitmo-229jc-42adt7408+4 | |
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Contextual Info: LPRF Board API Reference Manual JN-RM-2003 Revision 2.2 17 December 2012 LPRF Board API Reference Manual 2 NXP Laboratories UK 2012 JN-RM-2003 v2.2 LPRF Board API Reference Manual Contents About this Manual 7 Organisation Conventions Acronyms and Abbreviations |
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jn-rm-2003u16alsreadchannelresultu16htsreadtempresultu16htsreadhumidityresult | |
TRAMContextual Info: CY8C41123 and CY8C41223 PRELIMINARY Linear Power PSoC Devices 1.0 Features 1.1 • • • • Key Features • Extended Operating Voltage of 2.5V to 36V • 2 HV Linear Opamp Control Loops for Driving Power PFETs • 2 HV Analog Sense Inputs • 4KB of Flash |
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cy8c41123cy8c4122312-bit16-bit+1 | |
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Contextual Info: GE Datasheet ESTW024A0A BARRACUDA* Series; DC-DC Converter Power Modules 36-75Vdc Input; 5Vdc, 24A, 120W Output Features • Compliant to RoHS II EU “Directive 2011/65/EU -Z versions • Compliant to REACH Directive (EC) No 1907/2006 Flat and high efficiency curve |
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estw024a0a36-75vdc2011/65/eu | |
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Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior |
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fdd1600n10alzd | |
CY8C41123
Abstract: CY8C41223 power psoc
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cy8c41123cy8c4122312-bit16-bit+1 | |
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