FDD1600N10ALZD Search Results
FDD1600N10ALZD Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.8A TO252-5L | Original | 12 |
FDD1600N10ALZD Price and Stock
onsemi FDD1600N10ALZDMOSFET N-CH 100V 6.8A TO252-4L |
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FDD1600N10ALZD | Reel |
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FDD1600N10ALZD Datasheets Context Search
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Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD1600N10ALZD | |
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Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD1600N10ALZD | |
sje 2004
Abstract: sje 204 equivalent diode DA 68a TO-252AD fast reverse recovery time of LED
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FDD1600N10ALZD FDD1600N10ALZD sje 2004 sje 204 equivalent diode DA 68a TO-252AD fast reverse recovery time of LED | |
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Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior |
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FDD1600N10ALZD |