120V Search Results

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

Contextual Info: AC Adapter 12VDC/500mA 412-112055 1.73 1.93 2.56 3.5mm 1.3mm .470 Dimensions: in. except where noted SPECIFICATIONS: • Primary voltage: 120VAC 60Hz 15W • Exciting current, open circuit: 120mA max. • DC resistance ± 10%: 125Ω • Secondary, no load voltage: 17.7VDC

15VAC

Contextual Info: AC Adapter 15VAC/400mA 412-215042 1.73 Dimensions: in. except where noted 1.93 2.56 2.5mm .55 SPECIFICATIONS: • Primary voltage: 120VAC 60Hz 12W • Exciting current, open circuit: 120mA max. • DC resistance ± 15%: 125Ω • Secondary, no load voltage: 17.4VAC

MJE5180

Abstract: 5182 MJE5181 MJE5182
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172

P546G

Abstract: TLP546G E67149 TLP546 e6714
Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO DE I TDTTESO DD17455 99D 17455 TLP546G GaAs IRED & PHOTO-THYRISTOR CONTROL IA(RHS) O f 120VAC LIKE. MOTOR CONTROLS. COtfTROLlER. COPIER. H O C ELECTRIC MACHINE. . . . . : IT <H>lS) • IA (Single Phase Pull Wave,

2SC3835

Abstract: transistor 2sc3835 Humidifier 2SC3835 equivalent dc-dc converter 12v to 5v 3a npn transistor 3A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS

BDT87F

Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F

2SA1201

Abstract: 2SC2881
Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

j293

Abstract: J294 J292
Contextual Info: SIDE ENTRY MODULAR SMT JACK 4P PROFILE=11.50MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: SIDE ENTRY 4-PORT MODULAR PCB JACK 10P PROFILE=12.00MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

2sc3906k

Contextual Info: 2SC4102 / 2SC3906K Datasheet NPN 50mA 120V High Voltage Amplifier transistors lOutline Parameter Value VCEO IC 120V 50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SC4102 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (VCEO=120V). 2SC3906K

Contextual Info: SIDE ENTRY 4-PORT MAGNETIC 10/100 BASE-T JACK WITH LED 8P FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: TOP ENTRY MODULAR SMT JACK 6P PROFILE=15.70MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: SIDE ENTRY UP LATCH MODULAR PCB JACK 8P PROFILE=13.46MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: TOP ENTRY MODULAR PCB JACK 4P PROFILE=15.00MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: SIDE ENTRY MODULAR PCB JACK WITH FERRITE 8P PROFILE=12.70MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: TOP ENTRY MODULAR PCB JACK 4P+6P+8P+10P PROFILE=12.70MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: SIDE ENTRY UP LATCH MODULAR PCB JACK WITH LED 8P PROFILE=13.46MM FULLY SHIELDED SPECIFICATIONS MATERIALS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min.

Contextual Info: SIDE ENTRY MODULAR PCB JACK 8P PROFILE=13.60MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: TOP ENTRY MODULAR PCB JACK 8P PROFILE=12.70MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: SIDE ENTRY EMBEDDED MODULAR SMT JACK 8P PROFILE=9.58MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: SIDE ENTRY UP LATCH MODULAR PCB JACK 4P PROFILE=14.50MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

ltach

Contextual Info: SIDE ENTRY UP LTACH MODULAR PCB JACK WITH LED 8P PROFILE=13.50MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min.