1200 Search Results

tms 1000

Abstract: TMS1000NC tms1000n TMS1000
Contextual Info: TM S 1000 NC. TMS 1200 NC MICROCOMPUTERS D E S C R IP T IO N The T M S 1 0 0 0 series is a fa m ily o f P-channel MOS fo u r -b it m ic ro c o m p u te rs w ith a R O M , a R A M , and an a rith m e tic log ic u n it o n a single se m ico n d u cto r c h ip . The T M S 1 0 0 0 fa m ily is u n iq u e in th e fie ld o f m icroprocessors because th is

Contextual Info: 1. Discrète Types 2. 600 V Types 3. 1200 V Types 4. 1700 V Types 5. Chopper Modules

SF25G13

Abstract: SF25L13 SF25D SF25G TOSHIBA THYRISTOR
Contextual Info: THYRISTOR S F 2 5 D , F , G , I , L , N , Q 1 3 SILICON DIFFUSED TYPE Unit in mm MEDIUM POWER CONTROL APPLICATIONS. ¿20MAX . Repetitive Peak Off-State Voltage : } -200 - 1200V Repetitive Peak Reverse Voltage :V r r m . Average On-State Current :I'j^y) = 25A

Thyristor ys

Abstract: thyristor 15V 1000A QM1200
Contextual Info: 1200EX24 TOSHIBA GATE TURN-OFF THYRISTOR 1200EX24 TENTATIVE DATA 1200EX24 U nit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : VDRM = 2500V R.M.S On-State Current : lT(RMS) = 500A Peak Turn-Off Current : It GQM = 1200A

SG3000GXH29

Abstract: SG3000GXH 13-108D1A
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent

SG3000GXH29

Contextual Info: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

DIODE B12

Abstract: B12 DIODE TSG15N120CN
Contextual Info: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

TAT7469

Abstract: RES_0402
Contextual Info: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM gain stage MDU Output Distribution amplifiers Node Transimpedance Amplifier Product Features • • • • • SOIC-8 package Functional Block Diagram 75 Ω, 50 MHz to 1200 MHz Bandwidth

TAT7427B

Contextual Info: TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Applications • • • • Distribution Amplifiers Multi Dwelling Units Drop Amplifiers Single Ended Gain Blocks SOT-89 Package Product Features • • • • • • • • Functional Block Diagram

zero flux current sensor

Contextual Info: CSNA111 CSN Series closed loop current sensor, measures Actual product appearance may AC, DC or impulse current, vary. 50 A nominal, ± 70 amp range, 1000 turn Potential Applications Features • • • • • • • • Current sensing up to 1200 amps

TPDV640RG

Abstract: TPDV840RG TPDV1240 TPDV1240RG high voltage triacs
Contextual Info: TPDVxx40 40 A high voltage Triacs Features A2 • On-state current IT(RMS : 40 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 200 mA ■ Commutation @ 10 V/µs: up to 142 A/ms ■ Noise immunity: 500 V/µs ■ insulated package:

sch2080

Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
Contextual Info: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed

IEC60721-3-3

Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
Contextual Info: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3 IEC60721 L4926E
Contextual Info: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

TMS99532A

Abstract: tms99532 tms99531 TMS99534 xmtd TMS99542
Contextual Info: T E X A S I N S T R U M E N T S INC 07E D J Ö U 1 7 2 4 GG77137 7 | T-75-33-05 1200 BPS full duplex modem Market requirements and the TMS99542 Although the TMS99532A has been a tremendous success and met the market’s needs for an easy- touse low-speed modem, it did not

Edal Series B780 Sub-Miniature Silicon High Voltage Rectifier

Abstract: B780
Contextual Info: Edal SERIES B780 SUB-MINIATURE SILICON HIGH VOLTAGE RECTIFIER PART NUMBER PIV VOLTS Io ma @ 40o C Vf @ Io @ 25o C Ir @ PIV @ 25o C B780-50 B780-60 B780-70 B780-80 B780-100 B780-120 B780-150 B780-200 5000 6000 7000 8000 10000 12000 15000 20000 600 400 300 250

LR19766

Abstract: E62806 1103 414 1103
Contextual Info: Heavy Duty Terminal Blocks 1103P and 1200 Series - Deadfront Type 600 Volts Specifications: • • • • • • • • Base, General Purpose Phenolic, 150° C Connector, Aluminum, Tin Plated Screws, Steel, Tin Plated 1103 P Wire Range #4-#14 Awg CU – 70 Amps

Contextual Info: SKiiP 2013 GB172-4DW V3 Absolute Maximum Ratings Symbol Ts = 25°C unless otherwise specified Conditions Values Unit V System SKiiP 3 VCC1 Operating DC link voltage 1200 Visol DC, t = 1 s, main terminals to heat sink 5600 V It RMS) per AC terminal, Tterminal <115°C

Contextual Info: SKKH 323/12 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 320 Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1300 V VRRM 1200 V IT AV ITSM i2t SEMIPACK 3 Thyristor / Diode Modules

Contextual Info: APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS G1 S1 G2 OUT 0/VBUS S2 VDSS = 1200V RDSon = 200m typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features  Power MOS 7 MOSFETs - Low RDSon

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX251GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SKCD 31 C 120 I HD Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.1 mA Tj = 25 °C IF = 55 A 1 VRRM = 1200 V Size: 5.6 x 5.6 mm² SKCD 31 C 120 I HD Features • high current density • easy paralleling due to a small forward

Contextual Info: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V