120 ATC Search Results

BLS6G2731-120

Contextual Info: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.

Contextual Info: 120 ATC www.vishay.com Vishay BCcomponents Aluminum Capacitors Axial High Temperature, High Ripple Current FEATURES 119 AHT-DIN smaller dimensions 118 AHT lower ESR higher ripple 120 ATC 125 °C 138 AML Fig. 1 QUICK REFERENCE DATA DESCRIPTION Nominal case sizes Ø D x L in mm

Contextual Info: 120 ATC www.vishay.com Vishay BCcomponents Aluminum Capacitors Axial High Temperature, High Ripple Current FEATURES 119 AHT-DIN smaller dimensions 118 AHT lower ESR higher ripple 120 ATC 125 °C 138 AML Fig. 1 QUICK REFERENCE DATA DESCRIPTION Nominal case sizes Ø D x L in mm

atc 17-33

Abstract: 885R 470-860 mhz Power amplifier w C901 ptf10037
Contextual Info: ERICSSON ^ PTF 10037 120 Watts, 470-860 MHz LDMOS Field Effect Transistor Description The 10037 is an internally m atched, com m on source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 470 to 860 MHz. It is rated at 120 watts minimum

po111

Abstract: ELNA capacitor 100 uf 50v transistor a09
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

BCP56

Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

BCP56

Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

ceramic capacitor 103 z 2kv

Contextual Info: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and

LM7805

Abstract: ptfa091201e BCP56 PTFA091201F
Contextual Info: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and

Contextual Info: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.

capacitor

Abstract: capacitor 120 pF 142-0701-801 GRM42-6C0G121J50 capacitor 120 nF GRM42 l 0701 3214W-1-103E BZX284C5V1 EEVHB1V100P
Contextual Info: DB-54008L-470 BOM Component ID Description Value Case size Manufacturer Part Code C4 Capacitor 10 nF 1206 Murata GRM42-6X7R104K50 C3 Capacitor 1 nF 1206 Murata GRM42-6C0G102J50 C1 Capacitor 120 pF 1206 Murata GRM42-6C0G121J50 C2 Capacitor 120 pF 1206 Murata

Contextual Info: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz

TRANSISTOR tl131

Abstract: C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR
Contextual Info: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

k1206

Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Contextual Info: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

k1206

Abstract: G200 LDMOS transistor 1W
Contextual Info: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.

LM78L05ACM-ND

Abstract: LM78L05ACMND C210 TL122
Contextual Info: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

Contextual Info: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,

smd capa

Abstract: p33k
Contextual Info: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

Contextual Info: PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

Molex CE certificate

Abstract: E132002 LPS250
Contextual Info: 250 Watts LPS250 Series Total Power: 250 Watts Input Voltage: 85-264 VAC 120-300 VDC # of Outputs: Single Electrical Specs Input Input range Frequency Inrush current Efficiency EMI filter 85-264 VAC; 120-300 VDC 47-440 Hz 20 A max., cold start @ 25°C 75% typical at full load