12.471 Search Results

NAS-813

Abstract: MS-21921 NAS-820 MS90376 dust cap ms 21921 MS21921 MS-21921-4 DM 0365 R FC-722 ms90376
Contextual Info: GENERAL PROTECTION CAPS PART NUMBER End Caps IN. A MM IN. B MM BOX QTY A-3/32* A-1/8* A-5/32* A-3/16* A-1/4* A-9/32* AC-5/16* A-5/16* A-3/8* A-7/16* A-1/2B A-1/2* A-9/16* A-5/8* A-11/16* A-3/4* A-13/16* A-7/8* A-15/16 A-1* A-1-1/16* A-1-1/8 A-1-3/16*

AT28HC256N

Abstract: AT28HC256N-12 AT28HC256N-12JI AT28HC256N-90 AT28HC256N-90JI MS-016
Contextual Info: Features • Fast Read Access Time – 90 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms Maximum – 1 to 64-byte Page Write Operation

da 103255

Abstract: GH190 HM10S801B 2034 DA2 10.368 GL128 d5h 1083 GL-190 GH238 TFT LCD Source Driver 535
Contextual Info: HM10S801B SPEC CMOS TFT-LCD SOURCE DRIVER HM10S801B 384CH TFT-LCD SOURCE Driver for Monitor Ver 1.0, 2000. 11. 8 ☞ CONFIDENTIAL & PROPRIETARY ☜ < 1 / 20 > HM10S801B SPEC CMOS TFT-LCD SOURCE DRIVER • Description HM10S801B is a source driver for pixel inversion/N-line inversion LCD modules

HR R 221k 2kv

Abstract: led 2 pin lm358 jrc LM358 hr r 102k 2kv transistor pnp 3015 ICS1738 415V diodes Rectifier circuit diagram HR R 681K 2KV lm358 current sense
Contextual Info: ICS1738 QuickSaver Pulse Conditioning Charge Control IC for Rechargeable Lithium-Ion Batteries General Description The ICS1738 is a low cost 8 pin CMOS IC that provides a unique pulse conditioning charge technique, precision reference, fast charge time-out, back-up over-voltage and under-voltage shutdown, and status indicator for charging single and multiple

2SC5497

Abstract: NF 841
Contextual Info: TOSHIBA 2SC5497 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5497 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4dB f=2GHz • High Gain : Ga = 14dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL

0565C-FLASH-05

Contextual Info: Features • • • • • • • • • • • • • Single Voltage, Range 3V to 3.6V Supply 3-volt Only Read and Write Operation Software Protected Programming Fast Read Access Time - 100 ns Low Power Dissipation – 15 mA Active Current – 40 µA CMOS Standby Current

5962-88525 15 ZX

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC AT28C256 CERAMIC LEADLESS CHIP CARRIER AT28C256-15 AT28C256-20 AT28C256-25 AT28C256-35 AT28C256F
Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum

Be 555

Contextual Info: Features • • • • • • • • • • Single Supply for Read and Write: 2.7 to 3.6V Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks

AT28C64B-25

Abstract: AT28C64B-20PC
Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times • • • • • • • • – Page Write Cycle Time: 10 ms Maximum Standard 2 ms Maximum (Option)

AT49BV040A

Contextual Info: Features • • • • • • • • • • Single Supply for Read and Write: 2.7 to 3.6V Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks

AT49*512

Abstract: atmel at49bv512
Contextual Info: Features • • • • • • • • • • Single Supply Voltage Range, 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 70 ns Internal Program Control and Timer 8K Bytes Boot Block with Lockout Fast Erase Cycle Time – 10 Seconds

Contextual Info: Features • • • • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programming Fast Read Access Time - 120 ns Low Power Dissipation – 15 mA Active Current – 40 µA CMOS Standby Current

AT29BV020

Abstract: AT29BV020-12 AT29BV020-12JU AT29BV020-12TU AT29BV020-15 AT29BV020-15JU
Contextual Info: Features • • • • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programming Fast Read Access Time – 120 ns Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current

Contextual Info: Features • Single 2.7V to 3.6V Supply • Hardware and Software Data Protection • Low Power Dissipation • • • • • • • • – 15 mA Active Current – 20 µA CMOS Standby Current Fast Read Access Time – 200 ns Automatic Page Write Operation

Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

AT28C010-12TU

Abstract: AT28C010 AT28C010-12 AT28C010-15 AT28C010-15TU at28c010e-15ji
Contextual Info: Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

AT28HC64B-120

Abstract: AT28HC64B-70 AT28HC64B-70JI AT28HC64B-70PI AT28HC64B-70SI AT28HC64B-90 AT28HC64B AT28HC64BF
Contextual Info: Features • Fast Read Access Time – 70 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times • • • • • • • • • – Page Write Cycle Time: 10 ms Maximum Standard 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)

AT49F512

Contextual Info: Features • Single Voltage Operation • • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 Seconds Byte-by-byte Programming – 10 µs/Byte

AT49F040A-55TU

Abstract: AT49F040A-70JU AT49F040A
Contextual Info: Features • Single-voltage Operation • • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time – 55 ns Internal Program Control and Timer Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks

ATC600F0R1BT250XT

Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

Contextual Info: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

Contextual Info: Features • Fast read access time – 90ns • Dual voltage range operation • • • • • • • • • – Unregulated battery power supply range, 2.7V to 3.6V, or – Standard power supply range, 5V  10% Compatible with JEDEC standard Atmel AT27C010

Contextual Info: Features • Fast read access time – 90ns • Dual voltage range operation • • • • • • • • • – Low voltage power supply range, 3.0V to 3.6V, or – Standard power supply range, 5V  10% Compatible with JEDEC standard Atmel AT27C512R

AT28LV010-20TU SL319

Abstract: AT28LV010-20JU SL319 AT28LV010-20TU 28LV010 AT28LV010 AT28LV010-20 AT28LV010-20JU AT28LV010-25 MS-016 28lv010 sl319
Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum