28LV010 Search Results

tdb 0117

Abstract: 32-PIN
Contextual Info: SPACE ELECTRONICS INC. 128K X 8-BIT EEPROM SPACE PRODUCTS 28LV010RP VCC 1 RDY/BUSY 32 A15 A14 RES RES A12 WE OE A7 A13 A6 A8 CE A5 A9 WE A11 RES A3 SEi 28LV010RP A2 OE High Voltage Generator VSS A16 A4 16 VCC CE A0 I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 I/O4 VSS I/O3

Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM VCC VSS High Voltage Generator I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch FEATURES:

32-PIN RAD-PAK FLAT PACKAGE

Abstract: maxwell diagram 28LV010 32-PIN
Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch FEATURES:

28LV010

Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch FEATURES:

28 pin 128k eeprom

Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch FEATURES:

Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM VCC VSS High Voltage Generator I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch FEATURES:

Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM 28LV010 FEATURES: DESCRIPTION: • 3.3V low voltage operation 128k x 8 Bit EEPROM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission

128k x 8 eeprom

Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch FEATURES:

28LV010

Abstract: tdb 0117
Contextual Info: 28LV011 3.3V 1 Megabit 128K x 8-Bit EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES I/O Buffer and Input Latch OE CE WE Control Logic Timing RES 28LV011 A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch

atmel 728

Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time - 200 ns • Automatic Page Write Operation • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum

Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

AT28LV010-20TU SL319

Abstract: AT28LV010-20JU SL319 AT28LV010-20TU 28LV010 AT28LV010 AT28LV010-20 AT28LV010-20JU AT28LV010-25 MS-016 28lv010 sl319
Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

AT28LV010

Abstract: AT28LV010-20JU 28LV010 AT28LV010-20 AT28LV010-20JI AT28LV010-20PI AT28LV010-20TI AT28LV010-25 AT28LV010-25JI AT28LV010-25PI
Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

AT28LV010-20JU

Abstract: AT28LV010-20TU 28LV010 AT28LV010 AT28LV010-20 AT28LV010-25 MS-016
Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

Contextual Info: 28LV010 Features • • • • • • • • • • Single 3.3V ± 10% Supply Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 1 0 ms Maximum

28C011

Abstract: 28LV010 28C010 Maxwell Technologies 79C0832 79LV0408 79LV0832 HN58C1001 1mb eeprom
Contextual Info: APPLICATION NOTE Hitachi 1Mb EEPROM – Hitachi Die HN58C1001 Purpose Over the last several months several design applications questions have been asked regarding the Hitachi EEPROM. These questions have been to both clarify the datasheet specifications as well as obtain additional information not contained in the

ADC hard radiation

Abstract: 28/ADC hard radiation EEPROM 16MB SCS750 HSN-3000 79LV2040 29F0408 rad-pak 358 9240LP XP-40
Contextual Info: Microelectronics’ Product List Product Description Part Number Radiation Technology Package Screening Style Level FP DIP QFP Specification Status S or B Equivalent Data Sheet Active S, B, I, E S, B, I, E S, B, I, E S, B, I, E S, B, I, E Data Sheet Data Sheet

AT28LV010-20TI

Abstract: AT28LV010-20TU 28LV010 AT28LV010 AT28LV010-20 AT28LV010-20JC AT28LV010-20JI AT28LV010-20PC AT28LV010-20TC AT28LV010-25
Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

Contextual Info: 28LV010 Features • • • • • • • • • • Single 3.3 V ± 10% Supply Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 1 0 ms Maximum

AT28LV010-25TI

Abstract: AT28LV010-20 AT28LV010-20JC AT28LV010-20JI AT28LV010-20PC AT28LV010-20TC AT28LV010-25 28LV010 AT28LV010
Contextual Info: 28LV010 Features • • • • • • • • • • Single 3.3V ± 10% Supply Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum

AT28LV010-20TU

Abstract: AT28LV010-20TI AT28LV010-20JU 28LV010 AT28LV010 AT28LV010-20 AT28LV010-20JI AT28LV010-20PI AT28LV010-25 AT28LV010-25JI
Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

28LV010

Abstract: AT28LV010 AT28LV010-20 AT28LV010-20JI AT28LV010-20PI AT28LV010-20TI AT28LV010-25 AT28LV010-25JI AT28LV010-25PI AT28LV010-25TI
Contextual Info: Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

nas620

Abstract: RAD750 Uralane 5753 Uralane 5750 RAD750 processor RAD6000 bae rad750 rad750 user manual bae RAD750 software reference manual Calmark
Contextual Info: RAD750 Board Hardware User's Manual Document Number 234A533 Release Date December 20, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document #: 234A533 RAD750 3U CompactPCI Hardware Users Manual Notices Before using this information and the product it supports, be sure to read the general information on the

Contextual Info: Features • Single 3.3V ± 1 0 % Supply • Fast Read Access Time - 200 ns • Automatic Page Write Operation - Internal Address and Data Latches for 128 Bytes - Internal Control Timer • Fast Write Cycle Time - Page Write Cycle Time -1 0 ms Maximum - 1 to 128-Byte Page Write Operation