11S2 Search Results

11S2

Abstract: BUZ11 BUZ11A BUZ11S2
Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 11 BUZ 11A BUZ 11S2 = 50 . . 60 V ^DS = 26 . . 30 A h "•DSfoni = 0.04 . . 0.055 Q Rn • • • • N channel Enhancement mode Avalanche-proof Package: T Q -2 2 0 A B 1 Type Ordering code BUZ 11 C67078-A1301-A2

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

Contextual Info: 11S2325HP IBM11S4325HP 11S2325HM IBM11S4325HM 2M/4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: I -00 Low active current consumption All inputs & outputs are LVTTL 3.3V or TTL(5V) compatible -6R I -70

relais datenbuch siemens

Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Contextual Info: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8

Contextual Info: IB M 1 1 S 2 3 2 0 H N IB M 1 1 S 2 3 2 0 H L 2M x 32 SODIMM Module Features • All inputs & outputs are TTL 5V or LVTTL(3.3V) compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only, CBR, Hidden Refresh and Self Refresh • 2048 refresh cycles distributed across 256ms

fci dh 22

Abstract: JSA93382 HLW25R-2C7LF 6R2C HLW22R-2C7LF HLW31R-2C7LF JSA93626 HLW23S-2C7 1J23 HLW11S-2C7LF
Contextual Info: REVISIONS D E S C R IP T IO N REV A ECN BY D A TE J05-027 0 H.T 5/10/'05 RFI .EA SED CAT. NO. & DIMENSIONS ND. DF CONTACTS n DIMENSIONS (NOTED CAT. ND. RIGHT ANGLE TYPE A 1 0.3 STRAIGHT TYPE B C 4 HLW 4R-2C7LF HLW 4S-2C7LF 6.6 5.12 5 HLW 5R-2C7LF HLW 5S-2C7LF

diode sv 03

Abstract: SV-03 diode 1S2359 VR-60 VR-61 Diode SV-06
Contextual Info: SILICON RECTIFIER DIODE SKShows avalanche C olor code Effective current mA (Continuous, Ta=40'C) S V-1 Brown 500 C u rre n t fo r 0 .3 V (L e s s than 5 0 / iA ) , 1 00m A (L e s s than 1V) V o lta g e for S V -2 Red 150 C u rre n t fo r 1 .2 V (L e s s than 5 0 j« A ),

Contextual Info: 11S2325HP IBM11S4325HP 11S2325HM IBM11S4325HM 2M/4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -6R -70 I rAC RAS A ccess T im e ; 60ns j 60ns 70ns fcAC CAS Access Tim e i 15ns [ 17ns 20ns AA Access Tim e From Address

recommended torque

Contextual Info: TECHNICAL DATA SHEET ADAPTOR RPC-2.40 JACK – RPC-7 09KR107-P0AS3 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface RPC-7 according to RPC-2.40 mechanically compatible with IEC 457-2 RPC-1.85 Documents N/A Material and plating RF_35/06.07/5.0

murata SAW

Contextual Info: NSVA301 Oct. 2004 JRC SAW FILTER NSVA301 Application Cordless telephone Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Typ. Input and Output Impedance

Transistor BFR

Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Contextual Info: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code

59S22B-40MT5_K

Abstract: 59S22B-40MT5-Y din iso 2768 M IEC 60068-2-58 Group3&4 59S22B-40MT5_C 59S22B-40MT5_D USCAR test ISO 2768-mH 59S22B-40MT5-A
Contextual Info: TECHNICAL DATA DRAFT FAKRA - HF 59S22B-40MT5-Y PLUG FOR PCB All dimensions are in mm; tolerances according to ISO 2768 m-H Y = Part number has to be accomplished by codification Masse / dimensions mm Bereich / range 0 bis/to 0.5 0.5 bis/to 3 3 bis/to 6 Toleranz /

Contextual Info: IBM11S1320LP 11S2320LP IBM11S1320LM 11S2320LM 1M /2M x 32 S O D IM M M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tpAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns 30ns 35ns *AA Access Time From Address

Contextual Info: TECHNICAL DATA SHEET RPC-2.40 ADAPTOR JACK - PLUG 09KR121-SR00S3 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Mechanically compatible with RPC-1.85 Documents N/A Material and plating RF_35/06.07/5.0 Connector parts Center contact

Contextual Info: IB M 1 1 S 2 3 2 5 H 2M x 32 SODIMM Module Features cations. • Low active current consumption • All inputs & outputs are LVTTL 3.3V or TTL(5V) compatible • Extended Data Out (EDO) access cycle • Refresh Modes: RAS-Only, CBR, Hidden Refresh and Self Refresh

42C40

Abstract: P22-P20 42C60 TMP42C40 TMP42C40P TMP42C60 BM4211B TMP42C60P TLCS-42, 47
Contextual Info: TOSHIBA TMP42C40/60 CMOS 4-BIT MICROCONTROLLER TMP42C40P, TMP42C60P The 42C40/60 are compact, high speed 4-bit single chip microcomputers integrating ROM , RA M input/output ports, and interval timer. The 42C40/60 are the standard type devices in the TLCS-42 CM O S series.

Contextual Info: 11S2325H 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 rac RAS Access Tim e 60ns 70 ns tc A G CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e

j20 Schematic

Abstract: j200
Contextual Info: I J2 0 -0 1 1 5 N L NOTICE: THE INFORMATION AND DESIGN CONTAINED HEREIN B THE PROPERTY OF PULSE WHO RESERVES ALL RIGHTS THERETO. D NOTES: UNLESS OTHERWISE SPECIFIED 1. 2. D THIS COMPONENT IS RECOGNIZED BY ONE OR MORE SAFETY AGENCIES SUCH AS UL, VDE, CSA AND/OR TUV. ALL ENGINEERING CHANGES

Contextual Info: 11S2325L 2 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 Irac RAS Access Tim e 60ns 70 ns tcAG CAS Access Tim e 15ns 20 ns A ccess Tim e From Address 30ns 35ns Cycle Tim e 104ns 124ns EDO Mode Cycle Tim e

Contextual Info: 11S2320LN 11S2320LL 2 M x 3 2 S O D I M M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 I rac RAS Access Tim e 60ns 70 ns tcAG CAS Access Tim e 15ns 20 ns U a A ccess Tim e From Address 30ns 35ns I rc Cycle Tim e

SO DIMM 72-pin

Contextual Info: 11S2320HP IBM11S4320HP 11S2320HM IBM11S4320HM 2M /4M X 32 SO DIM M M odule Features • 72-Pin Small Outline Dual-In-Line Memory Module • Low active current consumption • All inputs & outputs are TTL 5V or LVTTL(3.3V) compatible • Performance:

s276

Abstract: 95250
Contextual Info: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG ADAPTOR QN JACK – 7/16 50  PLUG 153QK160-S00N5 All dimensions are in mm; tolerances according to ISO 2768 m-H

D2360

Contextual Info: Alphanumeric Index Part Num ber Type IIBM11D1320BB. IBM11D1320BC. IBM11D1320BD. IBM11D1320L. IBM1 1 D1360BA. IBM11D1360BB. IBM11D1360BD. IBM11D1360EA. IBM11D1360ED. IBM11D1360L. IBM11D1370BA. IBM11D1400BA. IBM11 D1480BA.

N 341 AB

Abstract: N 344 AB BUZ22 BUZ,350 8a5c buz341 C67078-S1406-A2
Contextual Info: SIEMENS SIPMOS*Leistungstransistoren SIPMOS* Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Bestellnummer Ordering code Gehäuse Package Bild Figure 125 C67078-S1020-A2 TO-204 AA 4 40 C67078-S1316-A2 10-220 AB 8a 40 C67078-S1316-A3