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MT29F2G08AAC

Abstract: SD-Card MMC AT91 5V ATMEL AT91 serial isp atmel AT91SAM-ICE
Contextual Info: ARM-Based Products Application Group AT91SAM9RL-EK Test Software Revision Table: Revision 3.0 3.1 Date June 13, 2008 August 19,2008 Comments Initial release 1.update AT91 ISP and Jlink driver 2.add LCD demo 1/11pages ARM-Based Products Application Group Table of Contents

E112081

Contextual Info: FicheE7/ASDrightangle22/05/0118:11Page2 SD D'Sub connectors - Stamped and Formed Contacts Spécifications DESCRIPTION MAIN CHARACTERISTICS RIGHT ANGLE, BOARD MOUNT CONNECTORS • A4 Style MIL footprint : UL File: E149426 • 1A Style (European footprint): UL File: E112081

Contextual Info: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM H IT A C H I ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the lising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

Contextual Info: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word X 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word X 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word X 4-bit X 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.3

AT91SAM-ICE

Abstract: MT29F2G08AAC AD1981B SD-Card MMC at91 programmer
Contextual Info: ARM-Based Products Application Group AT91SAM9RL-EK Test Software Revision Table: Revision 3.0 3.1 3.2 Date June 13, 2008 August 19,2008 February 04,2009 Comments Initial release 1.update AT91 ISP and Jlink driver 2.add LCD demo 1.Fix the issue of LCD shakiness

0444c2

Abstract: AT45CS1282 BA10 PA10 PA11 PA12 PA13
Contextual Info: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • – RapidS Serial Interface: 50 MHz Maximum Clock Frequency SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz – Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency

Contextual Info: •$ - M S M l- t t 5 6 V 1 6 4 0 0 2-B an k x 2,097,152-W ord x 4 -B it SYN CH RO N O U S DYN AM IC RAM DESCRIPTION The MSMS6V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible.

DQ131

Abstract: MT48LC16M16A2TG8E
Contextual Info: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron

Contextual Info: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/I65 is a 4M bit CM OS multiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access memory RAM port and a 512-words by 16-bits static serial access m em ory (SAM)

Contextual Info: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES C lock frequency: 1 6 6 ,1 4 3 , 125, 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated sim ultaneously and

atmel 1138

Abstract: 1273A-04
Contextual Info: Introduction This document contains the latest information about the AVR data book and the AVR data sheets. All references to the data book refers to the August 1999 version of the “AVR RISC MICROCONTROLLER DATA BOOK”. All references to the AVR data sheets refer to the latest version of the AVR data

rft electronica

Contextual Info: HM52161 65 Series Preliminary 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs arc referred to the rising edge of the clock input. The H M 5 2 16165 is offered in 2 banks for improved performance. Features Rev. 0.0 Jul. 2 9 ,1 9 9 4

Contextual Info: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is a 5 12k X 64

Product Training Module

Contextual Info: Crystals Oscillators Filters Precision Timing Magnetics Engineered Solutions WWW.ABRACON.COM WWW.ABRACON.COM Introduction Purpose: Introduce the ASG series, Fixed Frequency XO & VCXO Objectives: - Explain the benefits of the ASG series of products - Provide overview of the primary features

48LC8M8

Contextual Info: MICRON* I 64M b: xV n V,1,5 TCCHWLOOY.INC. S D R A M MT48LC16M4A2 - 4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 - 1 Meg x 16 x 4 banks SYNCHRONOUS DRAM F o r the late st data sheet revisions, plea se re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l

1431T

Abstract: TF861 Autodialer 1428-TR
Contextual Info: S Toshiba TF831 PLAIN PAPER/LASER OR LAB ATO INC. RY BUYE R Test Report MID-VOLUME FACSIMILE MACHINES RECOMMENDED 8 • TE STED • Manufacturer: Toshiba America Information Systems, Inc. Irvine, CA Made in Japan Suggested retail price: $3,999, base machine; $4,498 as tested with 4-Mb

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: HB526A264DB Series 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-607 Z Preliminary Rev. 0.1 May. 20, 1997 Description The HB526A264DB is a lM x 64 X 2 banks Synchronous Dynamic RAM Sm all Outline Dual In-line M emory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit SDRAM (HM5216805TT/HM5216805LTT)

Nippon capacitors

Abstract: PAL/flyback BSH 12 n5
Contextual Info: HB52A48DB Series, HB52A88DC Series HB52A48DB 32 MB Unbuffered SDRAM S.O.DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M x 16 components HB52A88DC 64 MB Unbuffered SDRAM S.O.DIMM 8-Mword x 64-bit, 66 MHz Memory Bus, 2-Bank Module (8 pcs of 4 M x 16 components)

eeprom 24c02

Abstract: RD301 ASJ PTE
Contextual Info: HB526C272EN-10IN, HB526C472EN-10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15, 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line M emory Module) family, and

soic16w

Abstract: wdc 1994 MLX90314 MLX90314AB SO16W
Contextual Info: MLX90314AB Programmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by programmable coefficients External or internal temperature sensor for compensating temperature errors

MLX90314

Abstract: SO16W
Contextual Info: MLX90314 Programmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by programmable coefficients External or internal temperature sensor for compensating temperature errors

Tyco MCON 1.2

Abstract: 114-18022 MS-7889
Contextual Info: Application Specification Verarbeitungs-Spezifikation MCON 1.2 mm Contact System MCON 1.2 mm Kontaktsystem 114-18464 th 14 MAY 2013 Rev R Table of Contents Inhaltsverzeichnis 1.

Nippon capacitors

Contextual Info: HB526C264EN Series, HB526C464EN Series 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-629B Z Rev. 2.0 Mar. 17, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and